Cell-specific reference generation and sensing
Methods, systems, and devices for operating a ferroelectric memory cell or cells are described. A portion of charge of a memory cell may be captured and, for example, stored using a capacitor or intrinsic capacitance of the memory array that includes the memory cell. The memory cell may be recharged (e.g., re-written). The memory cell may then be read, and a voltage of the memory cell may be compared to a voltage resulting from the captured charge. A logic state of the memory cell may be determined based at least in part on the voltage comparison.
1. A method of operating a ferroelectric memory array, comprising:
capturing, using a first digit line of a first ferroelectric memory cell, a portion of first charges stored in the first ferroelectric memory cell;
storing second charges using a capacitor of the first ferroelectric memory cell, wherein the second charges are a function of the portion of the first charges;
comparing a first voltage resulting from the portion of the first charges to a second voltage resulting from the second charges; and
determining a logic state of the first ferroelectric memory cell based at least in part on the comparison.
2. The method of claim 1 , wherein the second voltage comprises a reference voltage and determining the logic state of the first ferroelectric memory cell comprises:
determining the logic state based at least in part on a comparison of a value of the first voltage to the reference voltage.
3. The method of claim 1 , wherein capturing the portion of the first charges comprises:
storing the portion of the first charges on a digit line of a second ferroelectric memory cell.
4. A method of operating a ferroelectric memory array, comprising:
capturing, using a first digit line of a first ferroelectric memory cell, a portion of first charges stored in the first ferroelectric memory cell by storing the portion of the first charges on a second digit line of a second ferroelectric memory cell, wherein storing the portion of the first charges on the second digit line of the second ferroelectric memory cell comprises:
transferring the portion of the first charges from the first digit line of the first ferroelectric memory cell to the second digit line of the second ferroelectric memory cell;
storing second charges using a capacitor of the first ferroelectric memory cell;
comparing a first voltage resulting from the portion of the first charges to a second voltage resulting from the second charges; and
determining a logic state of the first ferroelectric memory cell based at least in part on the comparison.
5. The method of claim 1 , wherein the logic state corresponds to a logic 1 or a logic 0 and a second state associated with the second charges corresponds to an intermediary state between the logic 1 and the logic 0.
6. The method of claim 1 , further comprising:
discharging a ferroelectric capacitor of the first ferroelectric memory cell onto a first digit line corresponding to the first ferroelectric memory cell and a second digit line, wherein the portion of the first charges is based at least in part on charge-sharing between the first digit line and the second digit line.
7. A method of operating a memory array, comprising:
transferring a portion of first charges from a ferroelectric capacitor of a first ferroelectric memory cell to a digit line of a second ferroelectric memory cell;
transferring second charges from the ferroelectric capacitor of the first ferroelectric memory cell to a digit line of the first ferroelectric memory cell; and
comparing a first voltage on the digit line of the second ferroelectric memory cell to a second voltage on the digit line of the first ferroelectric memory cell, wherein the first voltage depends on the portion of the first charges and the second voltage depends on the second charges.
8. The method of claim 7 , further comprising:
determining a logic state stored by the first ferroelectric memory cell, wherein the determination is based at least in part on the comparison of the first voltage and the second voltage.
9. The method of claim 7 , wherein comparing comprises:
using the second voltage as a reference voltage.
10. The method of claim 7 , further comprising:
reducing a voltage applied to the ferroelectric capacitor of the first ferroelectric memory cell to a threshold value based at least in part on the transfer of the portion of the first charges.
11. The method of claim 10 , further comprising:
storing an intermediary state at the ferroelectric capacitor based at least in part on the reduced voltage, wherein the intermediary state corresponds to the second charges.
12. The method of claim 7 , wherein transferring the second charges comprises:
applying a voltage to the ferroelectric capacitor of the first ferroelectric memory cell.
13. The method of claim 12 , further comprising:
selecting the voltage applied to the ferroelectric capacitor based at least in part on the first voltage of the digit line of the second ferroelectric memory cell.
14. The method of claim 12 , wherein a value of the second voltage is based at least in part on the voltage applied to the ferroelectric capacitor.
15. The method of claim 7 , further comprising:
activating a switching component in electronic communication with the digit line of the first ferroelectric memory cell and the digit line of the second ferroelectric memory cell, wherein transferring the portion of the first charges is based at least in part on the activation of the switching component.
16. An electronic memory apparatus, comprising:
a first ferroelectric memory cell comprising a ferroelectric capacitor and a selection component;
a switching component in electronic communication with a digit line of the first ferroelectric memory cell and a digit line of a second ferroelectric memory cell; and
a controller in electronic communication with the first ferroelectric memory cell, the switching component, and the second ferroelectric memory cell, wherein the controller is operable to:
select the first ferroelectric memory cell using the selection component;
activate the switching component when a voltage on the digit line of the first ferroelectric memory cell reaches a first threshold value; and
apply a voltage to the ferroelectric capacitor, wherein application of the voltage is based at least in part on the selection of the first ferroelectric memory cell.
17. The electronic memory apparatus of claim 16 , wherein the controller is operable to:
select a value of the voltage applied to the ferroelectric capacitor based at least in part on a voltage at the digit line of the second ferroelectric memory cell.
18. The electronic memory apparatus of claim 16 , further comprising:
a sense component in electronic communication with the digit line of the first ferroelectric memory cell and the digit line of the second ferroelectric memory cell, wherein the controller is operable to:
activate the sense component, wherein activation of the sense component compares a voltage at the digit line of the first ferroelectric memory cell and a voltage at the digit line of the second ferroelectric memory cell.
19. The electronic memory apparatus of claim 18 , wherein the controller is operable to:
reduce the voltage applied to the ferroelectric capacitor to a threshold value based prior to activation of the sense component.