IP Library Granted Patent US 10,679,833
Granted Patent B2
US 10,679,833 · App. 15/075,119 · Granted Jun 9, 2020

Cylindrical sputtering target

Inventor: Yoshitaka Tsuruta (Kitaibaraki, JP)
Assignee: JX NIPPON MINING & METALS CORPORATION
H01J37/3423H01J37/342H01J37/3435H01J37/3491
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 10,679,833
App. No.
15/075,119
Granted
Jun 9, 2020
Kind
B2
Abstract

A cylindrical sputtering target includes a cylindrical substrate and a cylindrical sputtering target member joined together with a joining material. Where the joining material has a thickness of d (μm), the joining material has a coefficient of thermal expansion of α 1 (μm/μmK), and a melting point of the joining material and room temperature have a difference of ΔT (K), a surface of the cylindrical sputtering target member on the side of the joining material has a value of ten-point average roughness (Rz) fulfilling: d (μm)×α 1 (μm/μmK)×Δ T (K)≤ Rz (μm).

Claims (11)

1. A cylindrical sputtering target, comprising:

a cylindrical substrate and a cylindrical sputtering target member joined together with a joining material that is in contact with the cylindrical substrate and the cylindrical sputtering target member from one end of the cylindrical sputtering target member to the other end of the cylindrical sputtering target member;

wherein where the joining material has a thickness, estimated from a difference between an inner diameter of the cylindrical sputtering target member and an outer diameter of the cylindrical substrate, of d (μm), the joining material has a coefficient of thermal expansion of α 1 (μm/μK), and a melting point of the joining material and room temperature have a difference of ΔT (K), a surface of the cylindrical sputtering target member on the side of the joining material has concave and convex portions having a value of ten-point average roughness (Rz) fulfilling:

d (μm)×α 1 (μm/μmK)×Δ T (K)≤ Rz (μm)≤14 (μm), and

wherein the joining material is in contact with the concave and convex portions.

2. The cylindrical sputtering target according to claim 1 , wherein the surface of the cylindrical sputtering target member on the side of the joining material has a value of arithmetic average roughness (Ra) fulfilling:

d (μm)×α 1 (μm/μmK)×Δ T (K)×0.1 ≤Ra (μm).

3. The cylindrical sputtering target according to claims 1 , wherein the cylindrical sputtering target member is formed of ITO, IZO, IGZO or ITZO.

4. The cylindrical sputtering target according to claim 1 , wherein the joining material contains In or InSn.

5. The cylindrical sputtering target according to claim 1 , wherein the joining material has a thickness d fulfilling 0.5 mm≤d≤2.0 mm.

6. The cylindrical sputtering target according to claim 2 , wherein the joining material has a thickness d fulfilling 0.5 mm≤d≤2.0 mm.

Assignments (2)
CHANGE OF ADDRESS Recorded Aug 11, 2021
From: JX NIPPON MINING & METALS CORPORATION
To: JX NIPPON MINING & METALS CORPORATION
Reel/Frame 057160/0114 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 19, 2016
From: TSURUTA, YOSHITAKA
To: JX NIPPON MINING & METALS CORPORATION
Reel/Frame 038039/0487 →