Hybrid resonant driver for sic MOSFET

1. A method comprising:

activating a biasing current source which provides a biasing current flowing through a biasing inductor electromagnetically coupled to a resonant inductor;

waiting for the resonant inductor to reach a state of saturation;

activating a voltage supply for applying a source voltage across a first and a second transistor connected serially, the resonant inductor being connected to a node between the first and second transistors and a driving gate of a driving transistor;

determining a first control voltage for applying to a first gate of the first transistor and a second control voltage for applying to a second gate of the second transistor; and

applying the first and the second control voltage to the first and the second gate, respectively, the application of the first and the second control voltage sends a current to the driving gate via the resonant inductor to activate the driving transistor.

2. The method of claim 1 , further comprising deactivating the biasing current after the activation of the driving transistor.

3. The method of claim 2 , wherein deactivating the biasing current occurs about 10 nanoseconds after the activation of the driving transistor.

4. The method of claim 1 , wherein the first and the second control voltage are determined based on an amount of current necessary for activating the driving transistor.

5. The method of claim 1 , wherein the driving transistor is a Silicon-Carbide transistor.

6. The method of claim 1 , wherein the driving transistor conducts at least 100 A at 1200 V.

7. A circuit comprising:

a voltage source including a voltage supply, a first transistor, a first blocking diode, a second blocking diode, and a second transistor connected serially in a closed loop, a drain terminal of the first transistor connected to an anode of the first blocking diode, a cathode of the first blocking diode connected to an anode of the second blocking diode, and a cathode of the second transistor connected to a drain terminal of the second transistor;

driving circuitry including a resonant inductor, an output resistor, a driving transistor, the resonant inductor and the output resistor connected serially to a gate of the driving transistor, the resonant inductor connected to the cathode of the first blocking diode; and

biasing circuitry including a current source and a biasing inductor electromagnetically coupled to the resonant inductor, the biasing circuitry configured to saturate the resonant inductor by flowing a biasing current through the biasing inductor.

8. The circuit of claim 7 , wherein the first transistor is p-type and the second transistor is n-type.

9. The circuit of claim 7 , wherein the biasing circuit saturates the resonant inductor prior to activating the driving transistor.

10. The circuit of claim 9 , further comprising a controller configured to temporally synchronize the saturation of the resonant inductor and the activation of the driving transistor.

11. The circuit of claim 7 , wherein the driving transistor is a Silicon Carbide transistor.

12. The circuit of claim 7 , wherein an inductance of the resonant inductor is substantially 500 nanohenry.

13. The circuit of claim 7 , wherein the voltage source, the driving circuitry, and the biasing circuit are implemented on an integrated printed circuit board.

14. A hybrid resonant driving circuit, comprising:

a supply circuit including a voltage supply, an inverter circuit, and a first diode and a second diode, the voltage supply configured to provide electrical power to the inverter circuit, and the inverter circuit connected serially with the first and the second diode, a cathode of the first diode connected to an anode of the second diode;

a driving circuit including a resonant inductor, an input resistor, and a driving transistor, the resonant inductor and the input resistor connected serially to a gate of the driving transistor, the resonant inductor connected to the cathode of the first diode;

inductor saturation means for saturating the resonant inductor prior to activating the driving transistor; and

controller circuitry connected to the voltage supply, the inverter circuit, and the inductor saturation means, the controller circuitry configured to temporally synchronize a timing for saturating the resonant inductor prior to activating the driving transistor.

15. The hybrid resonant driving circuit of claim 14 , wherein the driving transistor is a Silicon Carbide metal-oxide-semiconductor field-effect transistor.

16. The hybrid resonant driving circuit of claim 14 , wherein the driving transistor conducts at least 100 A at 1200 V.

17. The hybrid resonant driving circuit of claim 14 , wherein the controller circuitry disables the inductor saturation means after activating the driving transistor.

18. The hybrid resonant driving circuit of claim 14 , wherein the supply circuit, the driving circuit, the inductor saturation means, and the controller are integrated onto a single printed circuit board.

19. The hybrid resonant driving circuit of claim 14 , wherein the inverter circuit includes a first transistor and a second transistor, and the controller circuit is configured to respectively transmit a control signal to gates of the first and the second transistor.

20. The hybrid resonant driving circuit of claim 19 , wherein the controller circuitry determines a voltage level of the control signal depending on the amount of current driven by the driving transistor.