Back-illuminated global-shutter image sensor
A global shutter image sensor of a back-illuminated type includes a semiconductor substrate and pixels. Each pixel includes a photosensitive area, a storage area, a readout area and areas for transferring charges between these different areas. The image sensor includes, for each pixel, a protector extending at least partly into the substrate from the back of the substrate to ensure that the storage area is protected against back illumination.
1. A back-illuminated image sensor comprising:
a semiconductor substrate; and
a plurality of pixels in the semiconductor substrate, each pixel comprising
a photosensitive area,
a storage area,
a readout area,
areas for transferring charges between the photosensitive, storage and readout areas, and
a protector extending at least partly into the semiconductor substrate from a back of the semiconductor substrate, the protector configured to protect the storage area against back illumination, wherein each pixel further comprises spaced apart first and second insulated vertical electrodes which extend from a front of the semiconductor substrate to at least partially delimit the storage area, the first insulated vertical electrode including a space corresponding to a first area for transferring charges between the photosensitive area and the storage area, and wherein the protector comprises:
spaced apart first and second capacitive insulation trenches which extend into the semiconductor substrate from a back of the semiconductor substrate, respectively opposite the first and second insulated vertical electrodes, and
a screen extending on the back of the semiconductor substrate between the spaced apart first and second capacitive insulation trenches to cover the storage area.
2. The back-illuminated image sensor according to claim 1 , wherein the protector non-electrically contacts the first and second insulated vertical electrodes.
3. The back-illuminated image sensor according to claim 1 , wherein the protector comprises metal.
4. The back-illuminated image sensor according to claim 1 , further comprising a control circuit configured to apply control signals to the first and second insulated vertical electrodes.
5. The back-illuminated image sensor according to claim 1 , wherein the semiconductor substrate and the plurality of pixels in the semiconductor substrate are configured so that the back-illuminated image sensor is a back-illuminated global shutter image sensor.
6. The back-illuminated image sensor according to claim 1 , wherein the first and second insulated vertical electrodes are in direct contact with a portion of the storage area.
7. The back-illuminated image sensor according to claim 1 , wherein the semiconductor substrate comprises an anti-reflective layer, and wherein the protector extends at least partly into the semiconductor substrate from a back of the semiconductor substrate—and through the anti-reflective layer.
8. A back-illuminated image sensor comprising:
a semiconductor substrate; and
a plurality of pixels in the semiconductor substrate, each pixel comprising
a photosensitive area,
a storage area,
a readout area,
areas for transferring charges between the photosensitive, storage and readout areas, and
a protector extending at least partly into the semiconductor substrate from a back of the semiconductor substrate and configured to protect the storage area against back illumination, wherein the protector comprises:
spaced apart first and second capacitive insulation trenches extending into the semiconductor substrate from a back of the semiconductor substrate to at least partially delimit the storage area and forming, in the storage area, spaced apart first and second insulated vertical electrodes,
the first insulated vertical electrode including a space corresponding to a first area for transferring charges between the photosensitive area and the storage area; and
the protector comprising a screen extending on the back of the semiconductor substrate between the first and second capacitive insulation trenches to cover the storage area.
9. The back-illuminated image sensor according to claim 8 , wherein the first and second capacitive insulation trenches extend from the back of the semiconductor substrate to a front of the semiconductor substrate.
10. The back-illuminated image sensor according to claim 8 , wherein the semiconductor substrate comprises on a front thereof, for each pixel, spaced apart implanted areas; and wherein the first and second capacitive insulation trenches extend from the back of the semiconductor substrate to the spaced apart implanted areas.
11. The back-illuminated image sensor according to claim 8 , wherein the semiconductor substrate comprises an anti-reflective layer, and wherein the protector extends at least partly into the semiconductor substrate from a back of the semiconductor substrate—and through the anti-reflective layer.
12. A three-dimensional integrated structure comprising:
a first electronic chip comprising a back-illuminated global shutter image sensor comprising
a semiconductor substrate,
a plurality of pixels in the semiconductor substrate, each pixel comprising
a photosensitive area,
a storage area,
a readout area,
areas for transferring charges between the photosensitive, storage and readout areas, and
a protector extending at least partly into the semiconductor substrate from a back of the semiconductor substrate, the protector configured to protect the storage area against back illumination; and
a second electronic chip comprising a control circuit for applying control signals to the back-illuminated global shutter image sensor, wherein the first and second electronic chips are joined together, wherein each pixel further comprises spaced apart first and second insulated vertical electrodes which extend from a front of the semiconductor substrate to at least partially delimit the storage area, the insulated vertical first electrode including a space corresponding to a first area for transferring charges between the photosensitive area and the storage area, and wherein the protector comprises:
spaced apart first and second capacitive insulation trenches which extend into the semiconductor substrate from a back of the semiconductor substrate, respectively opposite the first and second insulated vertical electrodes, and
a screen extending on the back of the semiconductor substrate between the spaced apart first and second capacitive insulation trenches to cover the storage area.
13. The three-dimensional integrated structure according to claim 12 , wherein the first and second electronic chips are joined together via hybrid bonding, with the hybrid bonding comprising at least one of metal-metal and insulator-insulator type bonding.
14. The three-dimensional integrated structure according to claim 12 , wherein the protector non-electrically contacts the first and second insulated vertical electrodes.
15. The three-dimensional integrated structure according to claim 12 , wherein the semiconductor substrate comprises an anti-reflective layer, and wherein the protector extends at least partly into the semiconductor substrate from a back of the semiconductor substrate—and through the anti-reflective layer.
16. A three-dimensional integrated structure comprising:
a first electronic chip comprising a back-illuminated global shutter image sensor comprising
a semiconductor substrate,
a plurality of pixels in the semiconductor substrate, each pixel comprising
a photosensitive area,
a storage area,
a readout area,
areas for transferring charges between the photosensitive, storage and readout areas, and
a protector extending at least partly into the semiconductor substrate from a back of the semiconductor substrate, the protector configured to protect the storage area against back illumination; and
a second electronic chip comprising a control circuit for applying control signals to the back-illuminated global shutter image sensor, wherein the first and second electronic chips are joined together, wherein the protector comprises:
spaced apart first and second capacitive insulation trenches extending into the semiconductor substrate from a back of the semiconductor substrate to at least partially delimit the storage area and forming, in the storage area, spaced apart first and second insulated vertical electrodes,
the first insulated vertical electrode including a space corresponding to a first area for transferring charges between the photosensitive area and the storage area, and
the protector comprising a screen extending on the back of the semiconductor substrate between the first and second capacitive insulation trenches to cover the storage area.
17. The three-dimensional integrated structure according to claim 16 , wherein the first and second capacitive insulation trenches extend from the back of the semiconductor substrate to a front of the semiconductor substrate.
18. The three-dimensional integrated structure according to claim 16 , wherein the semiconductor substrate comprises on a front thereof, for each pixel, spaced apart implanted areas; and wherein the first and second capacitive insulation trenches extend from the back of the semiconductor substrate to the spaced apart implanted areas.
19. The three-dimensional integrated structure according to claim 16 , wherein the semiconductor substrate comprises an anti-reflective layer, and wherein the protector extends at least partly into the semiconductor substrate from a back of the semiconductor substrate—and through the anti-reflective layer.
20. A method for protecting global shutter image sensor from back-illumination, the global shutter image sensor comprising a semiconductor substrate, a plurality of pixels in the semiconductor substrate, with each pixel comprising a photosensitive area, a storage area, a readout area, and areas for transferring charges between the photosensitive, storage and readout areas, the method comprising:
forming a protector that extends at least partly into the semiconductor substrate from a back of the semiconductor substrate to protect the storage area against back illumination, wherein each pixel further comprises spaced apart first and second insulated vertical electrodes which extend from a front of the semiconductor substrate to at least partially delimit the storage area, the first insulated vertical electrode including a space corresponding to a first area for transferring charges between the photosensitive area and the storage area, and wherein forming the protector comprises:
forming spaced apart first and second capacitive insulation trenches which extend into the semiconductor substrate from a back of the semiconductor substrate, respectively opposite the first and second insulated vertical electrodes, and
forming a screen extending on the back of the semiconductor substrate between the spaced apart first and second capacitive insulation trenches to cover the storage area.
21. The method according to claim 20 , wherein the protector non-electrically contacts the first and second insulated vertical electrodes.
22. The method according to claim 20 , wherein the semiconductor substrate comprises an anti-reflective layer, and wherein the protector extends at least partly into the semiconductor substrate from a back of the semiconductor substrate—and through the anti-reflective layer.
23. A method for protecting global shutter image sensor from back-illumination, the global shutter image sensor comprising a semiconductor substrate, a plurality of pixels in the semiconductor substrate, with each pixel comprising a photosensitive area, a storage area, a readout area, and areas for transferring charges between the photosensitive, storage and readout areas, the method comprising:
forming a protector that extends at least partly into the semiconductor substrate from a back of the semiconductor substrate to protect the storage area against back illumination, wherein forming the protector comprises:
forming spaced apart first and second capacitive insulation trenches extending into the semiconductor substrate from a back of the semiconductor substrate to at least partially delimit the storage area and forming, in the storage area, spaced apart first and second insulated vertical electrodes, the first insulated vertical electrode including a space corresponding to a first area for transferring charges between the photosensitive area and the storage area; and
forming a screen extending on the back of the semiconductor substrate between the first and second capacitive insulation trenches to cover the storage area.
24. The method according to claim 23 , wherein the first and second capacitive insulation trenches extend from the back of the semiconductor substrate to a front of the semiconductor substrate.
25. The method according to claim 23 , wherein the semiconductor substrate comprises an anti-reflective layer, and wherein the protector extends at least partly into the semiconductor substrate from a back of the semiconductor substrate—and through the anti-reflective layer.