Power amplifier module
A power amplifier module includes an amplifier transistor and a bias circuit. A first power supply voltage based on a first operation mode or a second power supply voltage based on a second operation mode is supplied to the amplifier transistor. The amplifier transistor receives a first signal and outputs a second signal obtained by amplifying the first signal. The bias circuit supplies a bias current to the amplifier transistor. The bias circuit includes first and second resistors and first and second transistors. The first transistor is connected in series with the first resistor and is turned ON by a first bias control voltage which is supplied when the first operation mode is used. The second transistor is connected in series with the second resistor and is turned ON by a second bias control voltage which is supplied when the second operation mode is used.
1. A power amplifier module comprising:
an amplifier transistor to which a first power supply voltage or a second power supply voltage is supplied based on a mode signal supplied to the power amplifier module, the amplifier transistor receiving a first signal and outputting a second signal obtained by amplifying the first signal; and
a bias circuit that supplies a bias current to the amplifier transistor,
the bias circuit including
a first resistor,
a first transistor that is connected in series with the first resistor and that is turned ON by a first bias control voltage which is supplied when the mode signal indicates that a first operation mode is to be used to amplify the first signal,
a second resistor, and
a second transistor that is connected in series with the second resistor and that is turned ON by a second bias control voltage which is supplied when the mode signal indicates that a second operation mode is to be used to amplify the first signal.
2. The power amplifier module according to claim 1 , further comprising:
a bias control circuit that outputs the first bias control voltage and the second bias control voltage.
3. The power amplifier module according to claim 1 , wherein the bias circuit further includes a third transistor that is connected in series with the first and second transistors and that is turned ON by a third bias control voltage which is supplied when the first or second operation mode is used.
4. The power amplifier module according to claim 3 , further comprising:
a bias control circuit that outputs the first bias control voltage, the second bias control voltage, and the third bias control voltage.
5. A power amplifier module comprising:
an amplifier transistor to which a first power supply voltage or a second power supply voltage is supplied based on a mode signal supplied to the power amplifier module, the amplifier transistor receiving a first signal and outputting a second signal obtained by amplifying the first signal; and
a bias circuit that supplies a bias current to the amplifier transistor,
the bias circuit including
a first resistor,
a first transistor that is connected in series with the first resistor and that is turned ON by a first bias control voltage which is supplied when the mode signal indicates that a first operation mode is to be used to amplify the first signal,
a second resistor that is connected in series with the first resistor and that is connected in parallel with the first transistor, and
a third transistor that is connected in series with the first transistor and that is turned ON by a third bias control voltage which is supplied when the first operation mode or a second operation mode is used to amplify the first signal.
6. The power amplifier module according to claim 5 , further comprising:
a bias control circuit that outputs the first bias control voltage and third bias control voltage.
7. The power amplifier module according to claim 1 , wherein the first operation mode is an envelope tracking mode, and the second operation mode is an average power tracking mode.
8. The power amplifier module according to claim 5 , wherein the first operation mode is an envelope tracking mode, and the second operation mode is an average power tracking mode.
9. The power amplifier module according to claim 1 , wherein when the amplifier transistor is a multi-finger transistor having N fingers, the bias circuit includes N pairs of the first transistor and the second transistor.
10. The power amplifier module according to claim 9 , wherein the N pairs of the first transistor and the second transistor are connected in parallel.
11. The power amplifier module according to claim 1 , wherein the power amplifier module is a multi-stage amplifier comprising a plurality of amplifier transistors and a plurality of bias circuits corresponding to the plurality of amplifier transistors.
12. The power amplifier module according to claim 5 , wherein the power amplifier module is a multi-stage amplifier comprising a plurality of amplifier transistors and a plurality of bias circuits corresponding to the plurality of amplifier transistors.
13. The power amplifier module according to claim 7 , wherein the first resistor and the first bias control voltage have values selected in accordance with providing the bias current for the envelope tracking mode and the second resistor and the second bias control voltage have values selected in accordance with providing the bias current for the average power tracking mode.
14. The power amplifier module according to claim 8 , wherein the first resistor and the first bias control voltage have values selected in accordance with providing the bias current for the envelope tracking mode and the first resistor, the second resistor, and the third bias control voltage have values selected in accordance with providing the bias current for the average power tracking mode.
15. The power amplifier module according to claim 7 , wherein the first bias control voltage is greater than the second bias control voltage.
16. The power amplifier module according to claim 1 , wherein when the amplifier transistor is a multi-finger transistor having N fingers, the bias circuit includes one pair of the first transistor and the second transistor.
17. The power amplifier module according to claim 16 , wherein the one pair of the first transistor and the second transistor are connected in parallel.
18. The power amplifier module according to claim 16 , wherein the power amplifier module is a multi-stage amplifier comprising a plurality of amplifier transistors and a plurality of bias circuits corresponding to the plurality of amplifier transistors.