Self-formation of high-density arrays of nanostructures
View Patent ↗A method for forming nanostructures includes bonding a flexible substrate to a crystalline semiconductor layer having a two-dimensional material formed on a side opposite the flexible substrate. The crystalline semiconductor layer is stressed in a first direction to initiate first cracks in the crystalline semiconductor layer. The first cracks are propagated through the crystalline semiconductor layer and through the two-dimensional material. The stress of the crystalline semiconductor layer is released to provide parallel structures including the two-dimensional material on the crystalline semiconductor layer.
1. A semiconductor device, comprising:
a crystalline semiconductor layer, the crystalline semiconductor layer being cracked to form parallel structures along at least one direction; and
a two-dimensional material formed on the crystalline semiconductor layer being separated at cracks in the crystalline semiconductor layer to form nanostructures.
2. The device as recited in claim 1 , wherein the cracks are spaced by an intercrack distance which is proportional to an applied strain during crack propagation.
3. The device as recited in claim 1 , wherein the two-dimensional material includes graphene.
4. The device as recited in claim 1 , wherein the crystalline semiconductor layer includes SiC.
5. The device as recited in claim 1 , further comprising second cracks formed transversely to the cracks along the at least one direction.
6. The device as recited in claim 5 , wherein the second cracks are formed through the crystalline semiconductor layer and through the two-dimensional material.
7. The device as recited in claim 6 , wherein the second cracks in combination with the first cracks provide dot structures including the two-dimensional material on the crystalline semiconductor layer.
8. The device as recited in claim 1 , further comprising: an electronic or photonic device formed by incorporating the parallel structures.