A silicon-oxide-nitride-oxide-silicon (SONOS) device is disclosed. The SONOS device includes a substrate; a first oxide layer on the substrate; a silicon-rich trapping layer on the first oxide layer; a nitrogen-containing layer on the silicon-rich trapping layer; a silicon-rich oxide layer on the nitrogen-containing layer; and a polysilicon layer on the silicon-rich oxide layer.
1. A silicon-oxide-nitride-oxide-silicon (SONOS) device, comprising:
a substrate;
a first oxide layer on the substrate;
a silicon-rich trapping layer on the first oxide layer, wherein the silicon-rich trapping layer comprises a silicon nitride (SiN) layer and a silicon-rich SiN layer;
a nitrogen-containing layer on the silicon-rich trapping layer;
a silicon-rich oxide layer on the nitrogen-containing layer; and
a polysilicon layer on the silicon-rich oxide layer.
2. The SONOS device of claim 1 , wherein the thickness of the silicon nitride layer is less than 10 Angstroms and the thickness of the silicon-rich SiN layer is less than 15 Angstroms.
3. The SONOS device of claim 1 , wherein the nitrogen-containing layer comprises a silicon nitride layer having a thickness between 10-30 Angstroms.
4. The SONOS device of claim 1 , wherein the nitrogen-containing layer comprises a silicon oxynitride layer having a thickness between 10-30 Angstroms.
5. The SONOS device of claim 1 , wherein the silicon-rich oxide layer comprises a thickness less than 15 Angstroms.
6. The SONOS device of claim 1 , further comprising a second oxide layer between the silicon-rich oxide layer and the polysilicon layer.
7. A silicon-oxide-nitride-oxide-silicon (SONOS) device, comprising:
a substrate;
a first oxide layer on the substrate;
a silicon-rich trapping layer on the first oxide layer, wherein the silicon-rich trapping layer comprises a silicon nitride layer and a silicon-rich SiON layer;
a nitrogen-containing layer on the silicon-rich trapping layer;
a silicon-rich oxide layer on the nitrogen-containing layer; and
a polysilicon layer on the silicon-rich oxide layer.
8. The SONOS device of claim 7 , wherein the thickness of the silicon nitride layer is less than 10 Angstroms and the thickness of the silicon-rich SiON layer is less than 15 Angstroms.