IP Library › Granted Patent US 9,834,839
Granted Patent B2
US 9,834,839 · App. 15/082,035 · Granted Dec 5, 2017

Cylindrical sputtering target, cylindrical compact, manufacturing method of cylindrical sputtering target, and manufacturing method of cylindrical sintered compact

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Quick Facts
Patent No.
US 9,834,839
App. No.
15/082,035
Granted
Dec 5, 2017
Kind
B2
Abstract

A cylindrical sputtering target includes a plurality of cylindrical sintered compacts adjacent to each other while having a space therebetween. The plurality of cylindrical sintered compacts have a relative density of 99.7% or higher and 99.9% or lower. The plurality of cylindrical sintered compacts adjacent to each other have a difference therebetween in the relative density of 0.1% or smaller.

Claims (3)

1. A cylindrical sputtering target, comprising:

a plurality of cylindrical sintered compacts adjacent to each other while having a space therebetween, the plurality of cylindrical sintered compacts containing ITO or IGZO and having a relative density of 99.7% or higher and 99.9% or lower, and the plurality of cylindrical sintered compacts adjacent to each other having a difference therebetween in the relative density of 0.1% or smaller,

wherein the relative densities of the plurality of cylindrical sintered compacts are different from each other.

Assignments (2)
CHANGE OF ADDRESS Recorded Aug 11, 2021
From: JX NIPPON MINING & METALS CORPORATION
To: JX NIPPON MINING & METALS CORPORATION
Reel/Frame 057160/0114 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 12, 2016
From: YAMAGUCHI, YOHEI
To: JX NIPPON MINING & METALS CORPORATION
Reel/Frame 038254/0139 →