Semiconductor device
Provided is a semiconductor device including a transistor having excellent electrical characteristics (e.g., on-state current, field-effect mobility, or frequency characteristics) or a semiconductor device including a transistor with high reliability. In the channel width direction of a channel-etched transistor in which an oxide semiconductor film is between first and second gate electrodes, the first and second gate electrodes are connected to each other through an opening portion in first and second gate insulating films. In addition, the first and second gate electrodes surround the oxide semiconductor film in a cross-section in the channel width direction, with the first gate insulating film provided between the first gate electrode and the oxide semiconductor film and the second gate insulating film provided between the second gate electrode and the oxide semiconductor film. Furthermore, the channel length of the transistor is 0.5 μm or longer and 6.5 μm or shorter.
1. A semiconductor device comprising:
a transistor comprising:
a first conductive film;
a first insulating film comprising a first oxide insulating film and a first nitride insulating film over the first conductive film;
an oxide semiconductor film over the first insulating film;
a second insulating film comprising a second oxide insulating film and a second nitride insulating film over the oxide semiconductor film;
a second conductive film over the second insulating film; and
a third conductive film electrically connected to the oxide semiconductor film; and
a capacitor element comprising:
an oxide conductor film;
the second nitride insulating film over the oxide conductor film; and
the second conductive film over the second nitride insulating film,
wherein a hydrogen concentration in the oxide conductor film is larger than a hydrogen concentration in the oxide semiconductor film,
wherein a first opening portion is provided in the first insulating film and the second insulating film,
wherein a second opening portion is provided in the first insulating film and the second insulating film,
wherein the oxide semiconductor film is positioned between the first opening portion and the second opening portion, and
wherein the first conductive film and the second conductive film are electrically connected to each other through the first opening portion and the second opening portion.
2. The semiconductor device according to claim 1 ,
wherein the third conductive film is over the oxide semiconductor film, and
wherein the second insulating film is over the third conductive film.
3. The semiconductor device according to claim 2 , wherein the second insulating film is in contact with the oxide semiconductor film.
4. The semiconductor device according to claim 1 , wherein a whole of the oxide semiconductor film overlaps the first conductive film.
5. The semiconductor device according to claim 1 , wherein the first nitride insulating film is in contact with the second nitride insulating film.
6. The semiconductor device according to claim 1 ,
wherein the oxide semiconductor film comprises a crystal region, and
wherein a c-axis of a crystal in the crystal region is aligned in a direction parallel to a normal vector of a top surface of the oxide semiconductor film.
7. The semiconductor device according to claim 1 ,
wherein the oxide conductor film comprises a crystal region, and
wherein a c-axis of a crystal in the crystal region is aligned in a direction parallel to a normal vector of a top surface of the oxide conductor film.
8. The semiconductor device according to claim 1 , wherein the second conductive film comprises a transparent conductive film containing indium.
9. The semiconductor device according to claim 1 , wherein a channel length of the transistor is greater than or equal to 0.5 μm and less than or equal to 6.5 μm.