DUAL-MATERIAL MANDREL FOR EPITAXIAL CRYSTAL GROWTH ON SILICON
In one example, a method for fabricating a semiconductor device includes etching a layer of silicon to form a plurality of fins and growing layers of a semiconductor material directly on sidewalls of the plurality of fins, wherein the semiconductor material and surfaces of the sidewalls have different crystalline properties.
1 . A semiconductor device, comprising:
a plurality of fins comprising silicon; and
a layer of a semiconductor material grown directly on a sidewall of at least one fin of the plurality of fins, wherein the semiconductor material and a surface of the at least one fin have different crystalline properties.
2 . The semiconductor device of claim 1 , wherein the semiconductor material is a Group III/V material.
3 . The semiconductor device of claim 1 , wherein the semiconductor material is a Group II/VI material.
4 . The semiconductor device of claim 1 , wherein the semiconductor material is a Group IV material.
5 . The semiconductor device of claim 1 , wherein the different crystalline properties comprises different lattice constants.
6 . The semiconductor device of claim 1 , wherein a crystal orientation of the semiconductor material is the same as a crystal orientation of the surface of the at least one fin.
7 . The semiconductor device of claim 1 , wherein the sidewall is aligned in a crystal orientation that is defined by a Miller index of (111).
8 . The semiconductor device of claim 1 , wherein the semiconductor device is a finFET device.
9 . The semiconductor device of claim 8 , wherein the layer of the semiconductor material forms a conducting channel of the finFET device.
10 . The semiconductor device of claim 1 , wherein the layer of the semiconductor material forms a one-dimensional pattern.
11 . The semiconductor device of claim 1 , wherein the layer of the semiconductor material forms a two-dimensional pattern.
12 .- 20 . (canceled)