Manufacturing method of interconnect structure
A conductive interconnect structure includes a contact pad; a conductive body connected to the contact pad at a first end; and a conductive layer positioned on a second end of the conductive body. The conductive body has a longitudinal direction perpendicular to a surface of the contact pad. The conductive body has an average grain size (a) on a cross sectional plane (Plane A) whose normal is perpendicular to the longitudinal direction of the conductive body. The conductive layer has an average grain size (b) on Plane A. The conductive body and the conductive layer are composed of same material, and the average grain size (a) is greater than the average grain size (b).
1. A method of manufacturing a conductive interconnect structure, comprising:
disposing a cover layer on a semiconductor package;
forming a through opening in the cover layer;
filling a first conductive material into the through opening by a first operation, wherein the first operation is configured to generate an average grain size (a) of the first conductive material; and
forming a second conductive material on an outer surface of the first conductive material by a second operation, comprising forming the second conductive material on a sidewall surface of the first conductive material, wherein the second operation is configured to generate an average grain size (b) of the second conductive material,
wherein the average grain size (a) is greater than the average grain size (b), and wherein the first conductive material and the second conductive material are substantially the same.
2. The method in claim 1 , further comprising forming a seed layer on the outer surface of the first conductive material before the formation of the second conductive material.
3. The method in claim 2 , wherein the seed layer is formed by an electroless plating operation.
4. The method in claim 1 , further comprising forming a mask layer around the first conductive material with a gap between the mask layer and a sidewall of the first conductive material.
5. The method in claim 1 , wherein the first operation and the second operation are deposition procedures comprising electroplating, electroless plating, physical vapor deposition, or the combination thereof.
6. The method in claim 5 , wherein a current for electroplating the first conductive material is less than a current for electroplating the second conductive material.
7. The method in claim 1 , wherein the first operation and the second operation are same kind of the deposition procedures.
8. The method in claim 1 , wherein the forming a second conductive material on an outer surface of the first conductive material comprises:
removing the cover layer;
disposing another cover layer; and
forming a through opening exposing the sidewall surface of the first conductive material.
9. The method in claim 8 , further comprising performing a liftoff of the second conductive material formed over the another cover layer.
10. The method in claim 1 , further comprising:
forming a seed layer over the semiconductor package prior to disposing the cover layer.
11. A method of manufacturing a conductive interconnect structure, comprising:
forming a contact pad;
forming a conductive body by a first operation, the conductive body with a longitudinal direction perpendicular to a surface of the contact pad connected to the contact pad at a first end, the conductive body comprising an average grain size (a) on a cross sectional plane whose normal is perpendicular to the longitudinal direction of the conductive body; and
forming a conductive layer by a second operation, the conductive layer comprising an average grain size (b) on the cross sectional plane positioned on a second end of the conductive body that is opposite to the first end,
wherein the contact pad is in proximity to the first end of the conductive body comprising the average grain size (a), and
wherein the first operation and the second operation comprises electroplating, and the first operation comprising applying a current only at a constant value.
12. The method in claim 11 , further comprising forming a seed layer on the second end of the conductive body before the forming of the conductive layer.
13. The method in claim 11 , wherein the current for electroplating the conductive body is less than a current for electroplating the conductive layer.
14. The method in claim 11 , wherein a duration for electroplating the conductive body is greater than a duration for electroplating the conductive layer.
15. A method of manufacturing a conductive interconnect structure, comprising:
disposing a first cover layer on a semiconductor package;
forming a first through opening in the cover layer;
filling a first conductive material into the first through opening by a first operation;
forming a roughening layer at least over a top surface of the first conductive material;
removing the first cover layer; and
disposing a second cover layer with second through opening exposing a sidewall surface of the first conductive material; and
forming a second conductive material over the roughening layer by a second operation, wherein the first operation and the second operation comprises electroplating operation under different currents.
16. The method in claim 15 , wherein the first conductive material comprises an average grain size (a) and the second conductive material comprises an average grain size (b), the average grain size (a) being from about 1.5 to 5 times greater than the average grain size (b).
17. The method in claim 15 , wherein the currents for electroplating the first conductive material is less than the currents for electroplating the second conductive material.
18. The method in claim 15 , wherein a duration for electroplating the first conductive material is greater than a duration for electroplating the second conductive material.
19. The method in claim 15 , wherein the forming the roughening layer comprises performing a sputtering operation.
20. The method in claim 15 , wherein the currents for electroplating the first conductive material is a constant current.