Curable composition for optical imprinting and pattern forming method
A curable composition for optical imprinting which is excellent in ink jet adequacy and releasability, a pattern forming method, a fine pattern, and a method for manufacturing a semiconductor device are provided. The curable composition for optical imprinting contains a polymerizable compound (A), a photopolymerization initiator (B), and a compound (C) expressed by General Formula (I); in General Formula (I), A represents a dihydric to hexahydric polyhydric alcohol residue. p represents 0 to 2, l q represents 1 to 6, p+q represents an integer of 2 to 6, each of m and n independently represents 0 to 20. r expressed by Formula (1) is 6 to 20. Each R independently represents an alkyl group having 1 to 10 carbon atoms, an aryl group, or an acyl group.
1. A curable composition for optical imprinting, comprising:
a polymerizable compound (A);
a photopolymerization initiator (B); and
a compound (C) expressed by General Formula (I),
wherein, in General Formula (I), A represents a trihydric to hexahydric polyhydric alcohol residue, p represents 0 to 2, q represents 1 to 6, p+q represents an integer of 2 to 6, m represents an average number of addition of ethyleneoxide, n represents an average number of addition of propyleneoxide, each of m and n independently represents 0 to 20, r expressed by Formula (1) is 6 to 20;
r =(sum of m )+(sum of n ) (1)
and each R independently represents an alkyl group having 1 to 10 carbon atoms, an aryl group, an acetyl group, a propionyl group or a benzoyl group,
wherein, when each of m and n are 2 or greater, the distribution thereof is random or blocked.
2. The curable composition for optical imprinting according to claim 1 ,
wherein the content of the compound (C) expressed by General Formula (I) is 3 mass % to 15 mass % with respect to the total mass of the composition except for solvent.
3. The curable composition for optical imprinting according to claim 1 ,
wherein the viscosity of the curable composition for optical imprinting at 23° C. is 15 mPa·s or less, and
the surface tension thereof is 25 mN/m to 35 mN/m.
4. The curable composition for optical imprinting according to claim 1 ,
wherein, in General Formula (I), R is an alkyl group having 1 to 4 carbon atoms.
5. The curable composition for optical imprinting according to claim 1 ,
wherein, in General Formula (I), p is 0.
6. The curable composition for optical imprinting according to claim 1 ,
wherein, in General Formula (I), m is 0.
7. The curable composition for optical imprinting according to claim 1 ,
wherein the polyhydric alcohol residue has 2 to 10 carbon atoms.
8. The curable composition for optical imprinting according to claim 1 ,
wherein, in General Formula (I), n is 0.
9. The curable composition for optical imprinting according to claim 1 ,
wherein the polymerizable compound (A) is a (meth)acrylate compound.
10. The curable composition for optical imprinting according to claim 1 ,
wherein the polymerizable compound (A) is a compound having an aromatic group.
11. The curable composition for optical imprinting according to claim 1 ,
wherein the content of a solvent is 5 mass % or less with respect to the total composition.
12. The curable composition for optical imprinting according to claim 1 ,
wherein, in General Formula (I), p is 0, and the content of a solvent is 5 mass % or less with respect to the total composition.
13. The curable composition for optical imprinting according to claim 1 ,
in General Formula (I), m is 0, and the content of a solvent is 5 mass % or less with respect to the total composition.
14. A pattern forming method, comprising:
applying the curable composition for optical imprinting according to claim 1 on a base material or a mold having a fine pattern; and
performing photoirradiation in a state in which the curable composition for optical imprinting is interposed between the mold and the base material.
15. The pattern forming method according to claim 14 ,
wherein the method of applying the curable composition for optical imprinting on the base material or the mold having the fine pattern is an ink jet method.
16. A fine pattern obtained by the pattern forming method according to claim 14 .
17. A method for manufacturing a semiconductor device using the pattern according to claim 16 as an etching mask.