Solid-state imaging device and electronic apparatus
A solid-state imaging device includes a semiconductor layer on which a plurality of pixels are arranged along a light-receiving surface being a main surface of the semiconductor layer, photoelectric conversion units provided for the respective pixels in the semiconductor layer, and a trench element isolation area formed by providing an insulating layer in a trench pattern formed on a light-receiving surface side of the semiconductor layer, the trench element isolation area being provided at a position displaced from a pixel boundary between the pixels.
1. An imaging device, comprising:
a semiconductor substrate having a first side as a light incident side and a second side opposite to the first side, the first side and the second side each extending in a first direction;
a plurality of photoelectric conversion units disposed in the semiconductor substrate;
a first trench region disposed in the semiconductor substrate between two of the plurality of photoelectric conversion units in the first direction;
a first metal region disposed adjacent to the first side such that the first metal region is above at least a part of the first trench region in a second direction, the second direction being perpendicular to the first direction;
a second trench region disposed in the semiconductor substrate adjacent to at least one of the plurality of photoelectric conversion units in the first direction;
a second metal region disposed adjacent to the first side such that the second metal region is above at least a part of the second trench region in the second direction;
a first opening of the first trench corresponding to a first color filter; and
a second opening of the second trench corresponding to a second color filter;
wherein the first trench region and the second trench region are offset in opposite directions from a boundary between the first color filter and the second color filter and the first metal region is offset from a center portion of the first trench region in an opposite direction than the second metal region is offset from a center portion of the second trench region,
wherein a size of the first opening and a size of the second opening are substantially the same, and
wherein a color of the first color filter is different from a color of the second color filter.
2. The imaging device according to claim 1 , wherein the first metal region is offset from a pixel boundary of a pixel in a direction that depends on a wavelength of light to be received in the pixel.
3. The imaging device according to claim 1 , further comprising:
a light-shielding film including the first metal region and the second metal region provided on a light-receiving side of the first side, the light-shielding film having an opening and being pattern-formed to have a line width with a pixel boundary being a center of the light-shielding film.
4. The imaging device according to claim 1 , further comprising:
an insulating layer included in the first trench region and the second trench region, wherein the insulating layer includes a metal oxide.
5. The imaging device according to claim 1 , wherein color filters of each color are provided on a light-receiving side of the first side, the color filters being pattern-formed so that a center of each one of the color filters corresponds to a center of each one of respective pixels.
6. The imaging device according to claim 1 , further comprising:
an on-chip lens provided on a light-receiving side of the first side, the on-chip lens being pattern formed so that a center of the on-chip lens corresponds to a center of a respective pixel.
7. The imaging device according to claim 4 , wherein a light-shielding film is embedded in a center of the first trench region.
8. The imaging device according to claim 1 , wherein the light-shielding film is a metal material comprising at least one of tungsten, aluminum, titanium nitride, and titanium.
9. The imaging device according to claim 1 , wherein the first trench region is formed to have a line width in a stepwise manner, the line width being increased on a side of the light incident side.
10. The imaging device according to claim 9 , wherein at least a portion of the first trench region on the side of the light incident side is displaced from a pixel boundary.
11. The imaging device according to claim 4 , wherein the insulating layer comprises one of silicon oxide or silicon nitride.
12. The imaging device according to claim 1 , wherein the semiconductor substrate includes a division area including an impurity area on a pixel boundary, the division area extending from the second side to the first trench region.
13. The imaging device according to claim 1 , wherein the first trench region, a light-shielding film, and an on-chip lens are positioned with respect to at least one of a plurality of pixels to arrange a desired sensitivity incidence angle such that the imaging device is devoid of coloring without decreasing an absolute sensitivity.
14. The imaging device according to claim 13 , wherein a vignetting of incident light on the light-shielding film is common among at least three different color pixels from the plurality of pixels.
15. The imaging device according to claim 1 , wherein color filters of each color are provided on a light-incident side of the first side, the color filters being pattern-formed so that the centers of each of the color filters correspond to centers of respective pixels.
16. The imaging device according to claim 1 , further comprising:
a set of pixels, wherein a first pixel in the set of pixels is closer to an edge of the set of pixels than a second pixel, wherein the first metal region is disposed corresponding to the first pixel and the second metal region is disposed corresponding to the second pixel, and wherein the first metal region is offset from a pixel boundary of the first pixel in a greater amount than the second metal region is offset from a pixel boundary of the second pixel.
17. The imaging device according to claim 16 , further comprising:
a set of microlens, wherein a first microlens is offset from the pixel boundary of the first pixel in a greater amount than the second microlens is offset from the pixel boundary of the second pixel.
18. The imaging device according to claim 1 , wherein the first metal region is offset from a pixel boundary of a pixel in an offset direction and an amount that depends on a wavelength of light to be received in the pixel.
19. The imaging device according to claim 18 , wherein the imaging device has a plurality of pixels that are arranged on the first side of the semiconductor substrate, wherein an amount of the offset depends on a location within the plurality of pixels.
20. The imaging device according to claim 18 , wherein the imaging device has a plurality of pixels that are arranged on the first side of the semiconductor substrate, wherein an amount of the offset is greater the further away that the first metal region is from a center of the plurality of pixels.
21. The imaging device according to claim 1 , wherein the first and the second metal regions do not include an embedded portion extending within the first and the second trench regions, and wherein the imaging device has an improved color balance without a decrease in an absolute sensitivity of the imaging device.
22. The imaging device according to claim 2 , wherein a volume and a position of a photoelectric conversion unit of the respective pixel depends on the wavelength of the light.
23. The imaging device according to claim 22 , wherein a color balance between light of a short wavelength photoelectrically converted in a first area on the light incident side and light of a long wavelength photoelectrically converted in a second area that is deeper than the first area is improved.
24. The imaging device according to claim 3 , further comprising:
a set of pixels having pixel boundaries including the pixel boundary, wherein a first pixel in the set of pixels is closer to an edge of the set of pixels than a second pixel, wherein the first metal region is disposed corresponding to the first pixel and the second metal region is disposed corresponding to the second pixel, and wherein the first metal region is offset from a first pixel boundary of the first pixel in a greater amount than the second metal region is offset from a second pixel boundary of the second pixel.
25. The imaging device according to claim 24 , further comprising:
a set of microlens, wherein a first microlens is offset from the first pixel boundary of the first pixel in a greater amount than the second microlens is offset from the second pixel boundary of the second pixel.
26. The imaging device according to claim 4 , wherein the insulating layer is disposed at the first side of the semiconductor substrate.
27. The imaging device according to claim 1 , further comprising:
a protective insulating layer included in the first trench region and the second trench region, wherein the protective insulating layer includes a metal oxide.
28. The imaging device according to claim 27 , wherein the metal oxide is at least one of hafnium, aluminum, and tantalum.
29. The imaging device according to claim 27 , wherein the protective insulating layer is disposed at the first side of the semiconductor substrate.
30. An electronic apparatus, comprising:
an imaging device, comprising:
a semiconductor substrate having a first side as a light incident side and a second side opposite to the first side, the first side and the second side each extending in a first direction;
a plurality of photoelectric conversion units disposed in the semiconductor substrate;
a first trench region disposed in the semiconductor substrate between two of the plurality of photoelectric conversion units in the first direction;
a first metal region disposed adjacent to the first side such that the first metal region is above at least a part of the first trench region in a second direction, the second direction being perpendicular to the first direction;
a second trench region disposed in the semiconductor substrate adjacent to at least one of the plurality of photoelectric conversion units in the first direction;
a second metal region disposed adjacent to the first side of the semiconductor substrate such that the second metal region is above at least a part of the second trench region in the second direction;
a first opening of the first trench corresponding to a first color filter; and
a second opening of the second trench corresponding to a second color filter;
wherein the first trench region and the second trench region are offset in opposite directions from a boundary between the first color filter and the second color filter and the first metal region is offset from a center portion of the first trench region in an opposite direction than the second metal region is offset from a center portion of the second trench region,
wherein a size of the first opening and a size of the second opening are substantially the same, and
wherein a color of the first color filter is different from a color of the second color filter.