Leakage reduction using stress-enhancing filler cells

1. One or more non-transitory computer-readable media storing computer-executable instructions for causing one or more processors to perform a method, the method comprising:

determining an optimization zone in a row of cells on a layout design, the optimization zone being a portion of the row of cells between two consecutive fixed cells, the optimization zone comprising unfixed cells and one or more filler cells, the fixed cells being functional cells of which positions cannot be changed, and the unfixed cells being functional cells of which positions can be changed; and

inserting stress-increasing filler cells into the optimization zone to replace some or all of the one or more filler cells while cell placement of the optimization zone is adjusted based on a leakage reduction analysis;

wherein the layout design describes an integrated circuit device or micro-electromechanical system (MEMS) device to be manufactured.

2. The one or more non-transitory computer-readable media recited in claim 1 , wherein the optimization zone comprises one or more unfixed cells having devices with large leakage current.

3. The one or more non-transitory computer-readable media recited in claim 2 , wherein the devices with large leakage current are identified based on analyzing layout-induced stress of devices of the layout design.

4. The one or more non-transitory computer-readable media recited in claim 2 , wherein the devices with large leakage current are pMOS (p-type metal-oxide-semiconductor) devices.

5. The one or more non-transitory computer-readable media recited in claim 4 , wherein the stress-increasing filler cells are obtained by removing active area from n-well regions of the filler cells.

6. The one or more non-transitory computer-readable media recited in claim 1 , wherein devices of the layout design are placed and routed before the inserting, wherein the routing of the unfixed cells is removed and the inserting keeps the order of the unfixed cells, and wherein the method further comprises: performing rerouting.

7. The one or more non-transitory computer-readable media recited in claim 1 , wherein the inserting comprises placing the stress-increasing filler cells first next to an unfixed cell that can lead to the largest reduction in leakage current, then next to an unfixed cell that can lead to the second largest reduction in leakage current and so on.

8. The one or more non-transitory computer-readable media recited in claim 1 , wherein the method further comprises:

performing stress analysis to identify devices with large leakage current, one or more of the devices with large leakage current being in the optimization zone.

9. A method, executed by at least one processor of a computer, comprising:

determining an optimization zone in a row of cells on a layout design, the optimization zone being a portion of the row of cells between two consecutive fixed cells, the optimization zone comprising unfixed cells and one or more filler cells, the fixed cells being functional cells of which positions cannot be changed, and the unfixed cells being functional cells of which positions can be changed; and

inserting stress-increasing filler cells into the optimization zone to replace some or all of the one or more filler cells while cell placement of the optimization zone is adjusted based on a leakage reduction analysis;

wherein the layout design describes an integrated circuit device or micro-electromechanical system (MEMS) device to be manufactured.

10. The method recited in claim 9 , wherein the optimization zone comprises one or more unfixed cells having devices with large leakage current.

11. The method recited in claim 10 , wherein the devices with large leakage current are identified based on analyzing lay-out-induced stress of devices of the layout design.

12. The method recited in claim 10 , wherein the devices with large leakage current are pMOS (p-type metal-oxide-semiconductor) devices.

13. The method recited in claim 12 , wherein the stress-increasing filler cells are obtained by removing active area from n-well regions of the filler cells.

14. The method recited in claim 9 , wherein devices of the layout design are placed and routed before the inserting, wherein the routing of the unfixed cells is removed and the inserting keeps the order of the unfixed cells, and wherein the method further comprises: performing rerouting.

15. The method recited in claim 9 , wherein the inserting comprises placing the stress-increasing filler cells first next to an unfixed cell that can lead to the largest reduction in leakage current, then next to an unfixed cell that can lead to the second largest reduction in leakage current and so on.

16. The method recited in claim 9 , further comprising:

performing stress analysis to identify devices with large leakage current, one or more of the devices with large leakage current being in the optimization zone.

17. A system comprising:

one or more processors, the one or more processors programmed to perform a method, the method comprising:

determining an optimization zone in a row of cells on a layout design, the optimization zone being a portion of the row of cells between two consecutive fixed cells, the optimization zone comprising unfixed cells and one or more filler cells, the fixed cells being functional cells of which positions cannot be changed, and the unfixed cells being functional cells of which positions can be changed; and

inserting stress-increasing filler cells into the optimization zone to replace some or all of the one or more filler cells while cell placement of the optimization zone is adjusted based on a leakage reduction analysis;

wherein the layout design describes an integrated circuit device or micro-electromechanical system (MEMS) device to be manufactured.