Light-emitting device, electronic equipment, and process of producing light-emitting device
A light-emitting device includes a light-reflecting layer, a first electrode disposed on or above the light-reflecting layer, a semi-transparent reflective second electrode, a light-emitting function layer disposed between the first electrode and the second electrode, and an electron-injection layer disposed between the light-emitting function layer and the second electrode. The second electrode is made of an Ag alloy having an Ag content of from 50% by atoms to 98% by atoms.
1. A light-emitting device comprising:
a light-reflecting layer;
a transparent first electrode disposed on or above the light-reflecting layer;
a semi-transparent reflective second electrode;
a light-emitting function layer disposed between the first electrode and the second electrode;
an electron-injection layer disposed between the light-emitting function layer and the second electrode;
a first layer disposed on the second electrode for absorbing stress to the second electrode; and
a passivation layer made of an inorganic material disposed on the first layer, wherein
the second electrode is made of an alloy in which any of Mg, Cu, Zn, Pd, Nd, and Al is mixed with Ag at an atomic number ratio in the range of 1:3 to 1:50.
2. The light-emitting device according to claim 1 , wherein
the second electrode has a thickness in a range of 10 to 30 nm.
3. The light-emitting device according to claim 2 , wherein
the first layer is made of a material having a work function of 4.2 eV or more and being other than Ag.
4. The light-emitting device according to claim 3 , wherein
the first layer is made of Zn, Al, Au, SnO 2 , ZnO 2 , or SiO.
5. The light-emitting device according to claim 2 , wherein
the light-emitting function layer includes an electron-injection layer; and
the first layer is made of the same material as that of the electron-injection layer.
6. The light-emitting device according to claim 5 , wherein
the first layer is made of LiF, Li 2 O, Liq, MgO, MgF 2 , CaF 2 , SrF 2 , NaF, or WF.
7. The light-emitting device according to claim 1 , wherein
the first layer is made of an electron-injecting material.
8. The light-emitting device according to claim 1 , wherein
the passivation layer is made of SiN or SiON.
9. Electronic equipment including the light-emitting device according to claim 1 .
10. Electronic equipment including the light-emitting device according to claim 2 .
11. Electronic equipment including the light-emitting device according to claim 3 .
12. Electronic equipment including the light-emitting device according to claim 4 .
13. Electronic equipment including the light-emitting device according to claim 5 .
14. Electronic equipment including the light-emitting device according to claim 6 .
15. Electronic equipment including the light-emitting device according to claim 7 .
16. Electronic equipment including the light-emitting device according to claim 8 .