Semiconductor device and method of manufacturing the same, and electronic apparatus
A semiconductor device is provided as a back-illuminated solid-state imaging device. The device is manufactured by bonding a first semiconductor wafer with a pixel array in a half-finished product state and a second semiconductor wafer with a logic circuit in a half-finished product state together, making the first semiconductor wafer into a thin film, electrically connecting the pixel array and the logic circuit, making the pixel array and the logic circuit into a finished product state, and dividing the first semiconductor wafer and the second semiconductor being bonded together into microchips.
1. An electronic apparatus, comprising:
an imaging device including:
a first semiconductor substrate having a light-incident side and including a pixel section, the pixel section including a photodiode and at least one of a transfer transistor, a reset transistor, or an amplification transistor,
a second semiconductor substrate having at least a part of a signal processing circuit, wherein the first semiconductor substrate and the second semiconductor substrate are bonded to each other,
a first multi-wiring layer formed at a side opposite to the light-incident side of the first semiconductor substrate, wherein the first multi-wiring layer is electrically connected to the pixel section,
a second multi-wiring layer formed at a first side of the second semiconductor substrate, wherein the side opposite to the light-incident side of the first semiconductor substrate and the first side of the second semiconductor substrate face each other, and wherein the signal processing circuit includes at least a plurality of wires of the second multi-wiring layer and a plurality of transistors,
a through-connection conductor extending from the light-incident side of the first semiconductor substrate to the second multi-wiring layer through the first semiconductor substrate in a peripheral section other than the pixel section, and
a first insulating layer disposed above the through-connection conductor,
wherein,
the through-connection conductor extends to the second multi-wiring layer by penetrating the first semiconductor substrate, and
the through-connection conductor has a first connection point connected to a wiring in the first multi-wiring layer and a second connection point connected to a wiring in the second multi-wiring layer; and
a lens configured to direct light to the light-incident side of the first semiconductor substrate.
2. The electronic apparatus according to claim 1 , wherein the first insulating layer includes at least one of SiCN, silicon nitride, or SiC.
3. The electronic apparatus according to claim 1 , further comprising:
a connection through-hole in which the through-connection conductor is disposed.
4. The electronic apparatus according to claim 3 , further comprising:
a second insulating layer disposed on at least a part of an inner wall of the connection through-hole.
5. The electronic apparatus according to claim 1 , wherein the first semiconductor substrate and the second semiconductor substrate are bonded to each other so that the first multi-wiring layer and the second multi-wiring layer face each other.
6. The electronic apparatus according to claim 1 , wherein a thickness of the first semiconductor substrate is less than a thickness of the second semiconductor substrate.
7. The electronic apparatus according to claim 1 , wherein the first semiconductor substrate and the second semiconductor substrate are bonded by using plasma bonding.
8. The electronic apparatus according to claim 1 , wherein at least one of a plasma TEOS film, a plasma SiN film, a SiON film, or a SiC film is formed on a bonding surface of the first semiconductor substrate or the second semiconductor substrate.
9. The electronic apparatus according to claim 1 , further including a color filter formed at the light-incident side of the first semiconductor substrate.
10. The electronic apparatus according to claim 1 , further including a micro-lens formed at the light-incident side of the first semiconductor substrate, wherein the through-connection conductor is formed in a predetermined area not corresponding to the micro-lens on the light-incident side of the first semiconductor substrate.
11. A semiconductor device comprising:
a first semiconductor substrate having a light-incident side and including a pixel section, the pixel section including a photodiode and at least one of a transfer transistor, a reset transistor, or an amplification transistor;
a second semiconductor substrate having at least a part of a signal processing circuit wherein the first semiconductor substrate and the second semiconductor substrate are bonded to each other
a first multi-wiring layer formed at a side opposite to the light-incident side of the first semiconductor substrate, wherein the first multi-wiring layer is connected to the pixel section;
a second multi-wiring layer formed at a first side of the second semiconductor substrate, wherein the side opposite to the light-incident side of the first semiconductor substrate and the first side of the second semiconductor substrate face each other, and wherein the signal processing circuit includes at least a plurality of wires of the second multi-wiring layer and a plurality of transistors; and
a through-connection conductor extending from the light-incident side of the first semiconductor substrate to the second multi-wiring layer through the first semiconductor substrate in a peripheral section other than the pixel section,
wherein,
the through-connection conductor extends to the second multi-wiring layer by penetrating the first semiconductor substrate, and
the through-connection conductor has a first connection point connected to a wiring in the first multi-wiring layer and a second connection point connected to a wiring in the second multi-wiring layer.
12. The semiconductor device according to claim 11 , further comprising:
a first insulating layer disposed above the through-connection conductor.
13. The semiconductor device according to claim 12 , wherein the first insulating layer includes at least one of SiCN, silicon nitride, or SiC.
14. The semiconductor device according to claim 11 , further comprising:
a connection through-hole in which the through-connection conductor is disposed.
15. The semiconductor device according to claim 14 , further comprising:
a second insulating layer disposed on at least a part of an inner wall of the connection through-hole.
16. The semiconductor device according to claim 11 , wherein the first multi-wiring layer is electrically connected to the pixel section via a connection conductor in the first multi-wiring layer.
17. The semiconductor device according to claim 11 , wherein the signal processing circuit is included in a logic circuit.
18. The semiconductor device according to claim 11 , wherein the first semiconductor substrate and the second semiconductor substrate are bonded to each other so that the first multi-wiring layer and the second multi-wiring layer face each other.
19. The semiconductor device according to claim 11 , wherein the through-connection conductor connects at least a lower wiring layer of the first multi-wiring layer and at least an upper wiring layer of the second multi-wiring layer.
20. The semiconductor device according to claim 19 , wherein the lower wiring layer of the first multi-wiring layer is connected to other wiring layers in the first multi-wiring layer.
21. The semiconductor device according to claim 11 , wherein the through-connection conductor connects a lowest wiring layer of the first multi-wiring layer and an uppermost wiring layer of the second multi-wiring layer.
22. The semiconductor device according to claim 11 , wherein a thickness of the first semiconductor substrate is less than a thickness of the second semiconductor substrate.
23. The semiconductor device according to claim 11 , wherein the first semiconductor substrate and the second semiconductor substrate are bonded by using a plasma bonding.
24. The semiconductor device according to claim 11 , wherein at least one of a plasma TEOS film, a plasma SiN film, a SiON film, or a SiC film is formed on a bonding surface of the first semiconductor substrate or the second semiconductor substrate.
25. The semiconductor device according to claim 11 , further including a color filter formed at the light-incident side of the first semiconductor substrate.
26. The semiconductor device according to claim 11 , further including a micro-lens formed at the light-incident side of the first semiconductor substrate, wherein the through-connection conductor is formed in a predetermined area not corresponding to the micro-lens on the light-incident side of the first semiconductor substrate.
27. The semiconductor device according to claim 11 , wherein a depth of the through-connection conductor is 5 μm to about 15 μm.
28. The semiconductor device according to claim 11 , wherein a diameter of the through-connection conductor at a contact area of the first connection point is 1 μm to 5 μm.
29. The semiconductor device according to claim 11 , wherein a diameter of the through-connection conductor at a contact area of the second connection point is 1 μm to 5 μm.
30. The semiconductor device according to claim 17 , wherein the through-connection conductor connects the pixel section and the logic circuit.