Solid-state imaging device and electronic apparatus including a photoelectric conversion unit disposed between another photoelectric conversion unit and a photoelectric conversion film
View Patent ↗A solid-state imaging device which includes, a photoelectric conversion film provided on a second surface side which is the opposite side to a first surface on which a wiring layer of a semiconductor substrate is formed, performs photoelectric conversion with respect to light in a predetermined wavelength region, and transmits light in other wavelength regions; and a photoelectric conversion layer which is provided in the semiconductor substrate, and performs the photoelectric conversion with respect to light in other wavelength regions which has transmitted the photoelectric conversion film, in which input light is incident from the second surface side with respect to the photoelectric conversion film and the photoelectric conversion layer.
1. An imaging device comprising:
a substrate having a first side and a second side as a light incident side, the substrate including:
a first photoelectric conversion unit, and
a second photoelectric conversion unit;
a wiring layer disposed adjacent to the first side of the substrate; and
a photoelectric conversion film disposed over the second side of the substrate,
wherein,
at least a portion of the second photoelectric conversion unit is disposed between the first photoelectric conversion unit and the photoelectric conversion film, and
the substrate is disposed between the photoelectric conversion film and the wiring layer.
2. The imaging device according to claim 1 , further comprising:
a lower electrode; and
an upper electrode, wherein the photoelectric conversion film is located between the lower electrode and the upper electrode.
3. The imaging device according to claim 2 , further comprising:
an insulating film located between the second side of the substrate and the lower electrode, wherein a portion of the photoelectric conversion film is disposed on the insulating film.
4. The imaging device according to claim 3 , wherein a portion of the photoelectric conversion film is disposed on the lower electrode.
5. The imaging device according to claim 4 , wherein the lower electrode is formed in pixel units.
6. The imaging device according to claim 5 , wherein the upper electrode is common to a plurality of pixels.
7. The imaging device according to claim 6 , further comprising:
a transparent electrode formed on the upper electrode, wherein the transparent electrode is electrically connected to the substrate via at least one contact unit.
8. The imaging device according to claim 7 , further comprising:
a pixel array including the plurality of pixels, wherein the at least one contact unit is located in a peripheral portion of the pixel array.
9. The imaging device according to claim 2 , further comprising:
a floating diffusion region; and
a light shielding film located between the photoelectric conversion film and the second side of the substrate, wherein charge is transferred from the photoelectric conversion film to the floating diffusion region via the light shielding film.
10. The imaging device according to claim 9 , wherein the light shielding film includes at least one of Ti, TiN, or W.
11. The imaging device according to claim 9 , further comprising:
a pixel array including a plurality of pixels, wherein the light shielding film is located between adjacent pixels in the pixel array, and wherein the light shielding film is set to a predetermined potential.
12. The imaging device according to claim 9 , further comprising:
another light shielding film formed on the transparent electrode in an optical black region in which photoelectric conversion is not performed.
13. The imaging device according to claim 2 , further comprising:
an electrode disposed on the upper electrode; and
a power supply unit, wherein the electrode is electrically connected to the power supply unit.
14. The imaging device according to claim 2 , further comprising:
a power supply unit electrically connected to the upper electrode.
15. The imaging device according to claim 2 , wherein the upper electrode is transparent.
16. The imaging device according to claim 2 , wherein the lower electrode is transparent.
17. The imaging device according to claim 2 , further comprising:
an insulating film disposed at edges of the lower electrode.
18. The imaging device according to claim 1 , wherein the photoelectric conversion film is common to a plurality of pixels.
19. The imaging device according to claim 1 , wherein the photoelectric conversion film is sensitive to green light.
20. The imaging device according to claim 1 , wherein the first photoelectric conversion unit is sensitive to red light.
21. The imaging device according to claim 1 , wherein the second photoelectric conversion unit is sensitive to blue light.
22. The imaging device according to claim 1 , wherein the first and second photoelectric conversion units are sensitive to a same color of light.
23. The imaging device according to claim 1 , wherein the second photoelectric conversion unit corresponds to a portion of a photoelectric conversion layer that is parallel to a surface of the substrate, and the first photoelectric conversion unit corresponds to a portion of the photoelectric conversion layer that is perpendicular to the surface of the substrate.
24. The imaging device according to claim 1 , further comprising:
a light shielding film located between the photoelectric conversion film and the second side of the substrate, wherein the light shielding film includes an opening which passes light to the second side, and wherein an area of the photoelectric conversion film is larger than an area of the opening.
25. The imaging device according to claim 1 , further comprising:
an electrode, wherein the electrode is electrically connected to the photoelectric conversion film.
26. The imaging device according to claim 25 , wherein the electrode is a transparent electrode.
27. The imaging device according to claim 1 , wherein the photoelectric conversion film is sensitive to green light, the first photoelectric conversion unit is sensitive to red light, and the second photoelectric conversion unit is sensitive to blue light.
28. The imaging device according to claim 1 , further comprising:
a transfer gate that is configured to transfer charge from the photoelectric conversion film to a floating diffusion region.
29. The imaging device according to claim 1 , further comprising:
a charge accumulation unit configured to accumulate charge from the photoelectric conversion film, wherein charge is transferred from the photoelectric conversion film to the charge accumulation unit via a conductive material embedded in a contact hole.
30. An electronic apparatus, comprising:
an imaging device including:
a substrate having a first side and a second side as a light incident side, the substrate including:
a first photoelectric conversion unit, and
a second photoelectric conversion unit,
a wiring layer disposed adjacent to the first side of the substrate, and
a photoelectric conversion film disposed over the second side of the substrate,
wherein,
at least a portion of the second photoelectric conversion unit is disposed between the first photoelectric conversion unit and the photoelectric conversion film, and
the substrate is disposed between the photoelectric conversion film and the wiring layer; and
an optical system that forms an image on the light incident side of the imaging device.