Methods of generation of pores in sheets of hexagonal boron nitride and applications thereof
This disclosure provides systems, methods, and apparatus related to few-layer and monolayer hexagonal boron nitride having a pore therein. In one aspect, a method comprises providing a sheet of hexagonal boron nitride (h-BN). A defect is created in the sheet of h-BN. The sheet of h-BN is heated to a temperature above about 500° C. The defect in the sheet of h-BN is irradiated with charged particles to enlarge the defect to a hexagonal-shaped pore or a parallelogram-shaped pore in the sheet of h-BN.
1. A method comprising:
(a) providing a sheet of hexagonal boron nitride (h-BN);
(b) creating a defect in the sheet of h-BN by depositing a catalyst on the sheet of h-BN and heating the catalyst;
(c) heating the sheet of h-BN to a temperature above about 500° C.; and
(d) irradiating the defect in the sheet of h-BN with charged particles to enlarge the defect to a hexagonal-shaped pore or a parallelogram-shaped pore in the sheet of h-BN.
2. The method of claim 1 , further comprising:
fabricating the sheet of h-BN.
3. The method of claim 1 , wherein the charged particles comprise particles selected from a group consisting of electrons, protons, and alpha particles.
4. The method of claim 1 , wherein the charged particles comprise electrons, and wherein the electrons have energies of about 40 kV to 120 kV.
5. The method of claim 1 , wherein the hexagonal-shaped pore or the parallelogram-shaped pore in the sheet h-BN has a dimension of about 1 nanometer to 3 nanometers across the hexagonal-shaped pore or the parallelogram-shaped pore.
6. The method of claim 1 , wherein the catalyst comprises a transition metal.
7. The method of claim 1 , wherein the catalyst comprises a metal selected from a group consisting of iron, cobalt, and nickel.
8. The method of claim 1 , wherein the sheet of h-BN is heated to a temperature of about 700° C. in operation (c).
9. The material of claim 1 , wherein the sheet of h-BN comprises a monolayer of h-BN.
10. The method of claim 1 , wherein the catalyst is heated using a laser in operation (b).
11. The method of claim 1 , wherein the catalyst reacts with the sheet of h-BN to form the defect in operation (b).
12. The method of claim 1 , wherein the catalyst comprises a single atom of the catalyst.
13. The method of claim 1 , wherein the catalyst comprises a cluster of atoms of the catalyst.
14. The method of claim 1 , wherein the catalyst comprises a nanoparticle.
15. The method of claim 1 , wherein the catalyst has dimensions of about 1 nanometer or less than about 1 nanometer.
16. The method of claim 1 , wherein photolithography is used to define an area of the sheet of h-BN on which the catalyst is deposited in operation (b).
17. The method of claim 1 , wherein the charged particles comprise oxygen ions, nitrogen ions, argon ions, or gallium ions.
18. The method of claim 1 , wherein defect in the sheet of h-BN is irradiated with charged particles for about 15 seconds to 60 seconds in operation (d).
19. The method of claim 1 , further comprising:
functionalizing the hexagonal-shaped pore or the parallelogram-shaped pore in the sheet of h-BN.
20. The method of claim 1 , wherein the catalyst is deposited on the sheet of h-BN in operation (b) by evaporation, chemical vapor deposition, atomic layer deposition, or sputtering.