Solving MLC NAND paired page program using reduced spatial redundancy

1 . A method of managing a memory, the method comprising

configuring a first memory and a second memory,

wherein the first memory and the second memory each comprises a plurality of multi-level cell (MLC) memory cells,

wherein each MLC memory cell comprises at least a least significant bit (LSB) and a most significant bit (MSB);

writing first data to multiple LSBs of the MLC memory cells of the first memory;

duplicating the first data to multiple LSBs of the MLC memory cells of the second memory;

writing second data to at least a MSB of the MLC memory cells of the first memory after writing and duplicating the first data.

2 . The method as in claim 1

wherein duplicating the first data to the second memory is automatically performed after the first data are written to the first memory.

3 . The method as in claim 1

wherein configuring the first memory and the second memory comprises setting an automatic duplication process of the first data from the first memory to the second memory.

4 . The method as in claim 1

wherein configuring the first memory and the second memory comprises configuring a parallel connection between the first memory to the second memory so that data written to LSBs of the first memory are also written to LSBs of the second memory.

5 . The method as in claim 1

wherein configuring the first memory and the second memory comprises configuring a program so that data written to LSBs of the first memory are also written to LSBs of the second memory.

6 . The method as in claim 1

wherein all LSBs of the first memory are written before written to the MSB of the first memory.

7 . The method as in claim 1 further comprising

repeating configuring other first and second memories for writing to the other first and second memories.

8 . The method as in claim 1 further comprising

configuring other first and second memories for writing to multiple LSBs of the other first and second memories before finish writing to MSBs of the first and second memories.

9 . The method as in claim 1 further comprising

writing third data to at least a MSB of the MLC memory cells of the second memory after writing and duplicating the first data.

10 . The method as in claim 1 further comprising

erasing data in the second memory;

configuring the second memory and a third memory,

wherein the third memory comprises a plurality of the multi-level cell (MLC) memory cells;

writing fourth data to multiple LSBs of the MLC memory cells of the second memory;

duplicating the fourth data to multiple LSBs of the MLC memory cells of the third memory;

writing fifth data to at least a MSB of the MLC memory cells of the second memory after writing and duplicating the fourth data.

11 . The method as in claim 1 further comprising

storing a write status of the writing operation of the second data.

12 . The method as in claim 1 further comprising

restoring data from the multiple LSBs of the second memory to the multiple LSBs of the first memory,

wherein the restoring operation is performed during a power up when an interrupted writing operation is detected.

13 . A data storage system comprising

a memory,

wherein the memory comprises a plurality of multi-level cell (MLC) memory cells,

wherein each MLC memory cell comprises at least a least significant bit (LSB) and a most significant bit (MSB);

a controller,

wherein the controller is configured to allocate a first memory array and a second memory array from the memory,

wherein the controller is configured to write first data to multiple LSBs of the MLC memory cells of the first memory array,

wherein the controller is configured to duplicate the first data to multiple LSBs of the MLC memory cells of the second memory,

wherein the controller is configured to write second data to at least a MSB of the MLC memory cells of the first memory after writing and duplicating the first data.

14 . The data storage system as in claim 13

wherein duplicating the first data to the second memory is automatically performed after the first data are written to the first memory.

15 . The data storage system as in claim 13

wherein the controller is configured to write third data to at least a MSB of the MLC memory cells of the second memory after writing and duplicating the first data.

16 . The data storage system as in claim 13

wherein the controller is configured to erase data in the second memory;

wherein the controller is configured to configure the second memory and a third memory,

wherein the third memory comprises a plurality of the multi-level cell (MLC) memory cells;

wherein the controller is configured to write fourth data to multiple LSBs of the MLC memory cells of the second memory;

wherein the controller is configured to duplicate the fourth data to multiple LSBs of the MLC memory cells of the third memory;

wherein the controller is configured to write fifth data to at least a MSB of the MLC memory cells of the second memory after writing and duplicating the fourth data.

17 . The data storage system as in claim 13

wherein the controller is configured to restore data from the multiple LSBs of the second memory to the multiple LSBs of the first memory,

wherein the restoring operation is performed during a power up when an interrupted writing operation is detected.

18 . A computer readable storage medium having a computer readable code in a data storage system, wherein the data storage system comprises a memory, wherein the memory comprises a plurality of multi-level cell (MLC) memory cells, wherein each MLC memory cell comprises at least a least significant bit (LSB) and a most significant bit (MSB), the computer readable code comprising:

program code for allocating a first memory array and a second memory array from the memory;

program code for writing first data to multiple LSBs of the MLC memory cells of the first memory array;

program code for duplicating the first data to multiple LSBs of the MLC memory cells of the second memory;

program code for writing second data to at least a MSB of the MLC memory cells of the first memory after writing and duplicating the first data.

19 . The computer readable storage medium as in claim 18 wherein the computer readable code further comprises

program code for writing third data to at least a MSB of the MLC memory cells of the second memory after writing and duplicating the first data.

20 . The computer readable storage medium as in claim 18 wherein the computer readable code further comprises

program code for erasing data in the second memory;

program code for configuring the second memory and a third memory,

wherein the third memory comprises a plurality of the multi-level cell (MLC) memory cells;

program code for writing fourth data to multiple LSBs of the MLC memory cells of the second memory;

program code for duplicating the fourth data to multiple LSBs of the MLC memory cells of the third memory;

program code for writing fifth data to at least a MSB of the MLC memory cells of the second memory after writing and duplicating the fourth data.