IP Library Granted Patent US 10,153,200
Granted Patent B2
US 10,153,200 · App. 15/090,144 · Granted Dec 11, 2018

Methods of forming a nanostructured polymer material including block copolymer materials

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Quick Facts
Patent No.
US 10,153,200
App. No.
15/090,144
Granted
Dec 11, 2018
Kind
B2
Abstract

Methods for fabricating sub-lithographic, nanoscale microstructures utilizing self-assembling block copolymers, and films and devices formed from these methods are provided.

Claims (26)

1. A method of forming a nanostructured polymer material, comprising:

thermally annealing a block copolymer material in contact with a non-preferentially wetting material to cause polymer blocks of the block copolymer material to phase separate and form a self-assembled block copolymer material within a trench, the non-preferentially wetting material over the block copolymer material.

2. The method of claim 1 , wherein thermally annealing a block copolymer material in contact with a non-preferentially wetting material comprises:

zone heating a first section of a block copolymer material to cause the first section to phase separate and self-assemble, and then subsequently heating remaining sections of the block copolymer material to cause the remaining sections to phase separate and self-assemble.

3. The method of claim 1 , further comprising removing the non-preferentially wetting material to expose the self-assembled block copolymer material within the trench.

4. The method of claim 3 , further comprising applying a solvent to the non-preferentially wetting material to enhance removal.

5. The method of claim 1 , wherein thermally annealing a block copolymer material in contact with a non-preferentially wetting material comprises thermally annealing the block copolymer material in contact with a non-preferentially wetting solid material.

6. The method of claim 1 , wherein thermally annealing a block copolymer material in contact with a non-preferentially wetting material comprises thermally annealing the block copolymer material in contact with an elastomeric material.

7. The method of claim 1 , wherein thermally annealing a block copolymer material in contact with a non-preferentially wetting material comprises thermally annealing the block copolymer material in contact with a poly(dimethylsiloxane) elastomer, a silicone, or a poly(urethane).

8. The method of claim 1 , wherein thermally annealing a block copolymer material in contact with a non-preferentially wetting material comprises thermally annealing the block copolymer material in contact with a solid elastomeric material.

9. A method of forming a nanostructured material, comprising:

thermally annealing a block copolymer material in contact with a non-preferentially wetting solid material to cause polymer blocks of the block copolymer material to phase separate and form a self-assembled block copolymer material within a trench in a first material overlying a second material;

removing the non-preferentially wetting solid material to expose the self-assembled block copolymer material;

crosslinking a first block of the self-assembled block copolymer material;

removing a second block of the self-assembled block copolymer material to form openings extending through the self-assembled block copolymer material; and

removing at least a portion of the second material through the openings to form openings in the second material.

10. The method of claim 9 , wherein thermally annealing a block copolymer material in contact with a non-preferentially wetting solid material to cause polymer blocks of the block copolymer material to phase separate and form a self-assembled block copolymer material comprises forming the self-assembled block copolymer material comprising cylindrical domains of a first polymer block in a matrix of a second polymer block.

11. The method of claim 9 , wherein removing at least a portion of the second material through the openings comprises etching portions of the second material through the openings.

12. The method of claim 9 , further comprising forming a metal or metal alloy in the openings in the second material.

13. The method of claim 9 , further comprising removing the crosslinked first block of the self-assembled block copolymer material.

14. A method of forming a nanostructured polymer material, comprising:

applying a non-preferentially wetting material to a top surface of a block copolymer material, the block copolymer material within trenches in a first material on a second material; and

thermally annealing the block copolymer material to form a self-assembled block copolymer material within the trenches.

15. The method of claim 14 , wherein applying a non-preferentially wetting material to a surface of a block copolymer material comprises applying the non-preferentially wetting material to the surface of a block copolymer material comprising cylindrical domains of a first block of the block copolymer material within a matrix of a second block of the block copolymer material.

16. The method of claim 15 , wherein thermally annealing the block copolymer material to form a self-assembled block copolymer material within the trenches comprises forming the cylindrical domains perpendicular to a floor of the trenches and extending through a thickness of the self-assembled block copolymer material in a single array for the length of the trenches.

17. The method of claim 14 , wherein applying a non-preferentially wetting material to a surface of a block copolymer material comprises applying a wetting material that is non-preferential to any block of the block copolymer material.

Assignments (7)
RELEASE OF SECURITY INTEREST Recorded Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →
RELEASE OF SECURITY INTEREST Recorded Oct 9, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050937/0001 →
RELEASE OF SECURITY INTEREST Recorded Aug 23, 2018
From: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 047243/0001 →
SECURITY INTEREST Recorded Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REPLACE ERRONEOUSLY FILED PATENT #7358718 WITH THE CORRECT PATENT #7358178 PREVIOUSLY RECORDED ON REEL 038669 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Recorded Jun 8, 2017
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 043079/0001 →
PATENT SECURITY AGREEMENT Recorded Jun 2, 2016
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 038954/0001 →
SECURITY INTEREST Recorded May 12, 2016
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 038669/0001 →