Semiconductor device and manufacturing method thereof
A flip-chip mounting technique with high reliability is provided in flip-chip mounting using a Cu pillar. In a semiconductor device to be coupled to a mounting board via a Cu pillar, the Cu pillar is caused to have a laminated structure including a pillar layer, a barrier layer, and a bump in this order from below, and the bump is formed to be smaller than the barrier layer.
1. A semiconductor device comprising:
a terminal pad disposed on a main surface side of a semiconductor chip;
a pillar layer disposed over the terminal pad and electrically coupled to the terminal pad;
a barrier layer disposed over the pillar layer and electrically coupled to the pillar layer; and
a bump disposed over the barrier layer and electrically coupled to the barrier layer,
wherein, in a cross section of the semiconductor device, a width of the bump is smaller than that of the barrier layer, and
wherein the width of the pillar layer is smaller than that of the barrier layer.
2. The semiconductor device according to claim 1 ,
wherein solder wettability of a surface of the barrier layer is lower than that of a surface of the pillar layer.
3. The semiconductor device according to claim 1 ,
wherein the pillar layer includes a material whose main component is Cu, and
wherein the barrier layer includes a material whose main component is Ni, and
wherein the bump includes a material whose main component is SnAg.
4. A semiconductor device comprising:
a terminal pad disposed on a main surface side of a semiconductor chip;
a pillar layer disposed over the terminal pad and electrically coupled to the terminal pad;
a barrier layer disposed over the pillar layer and electrically coupled to the pillar layer; and
a bump disposed over the barrier layer and electrically coupled to the barrier layer,
wherein a shape of each of the barrier layer and the bump, obtained when the main surface side of the semiconductor chip is planarly viewed, is approximately circular,
wherein a diameter of the bump is smaller than that of the barrier layer,
wherein the shape of the pillar layer, obtained when the main surface side of the semiconductor chip is planarly viewed, is approximately circular, and
wherein the diameter of the pillar layer is smaller than that of the barrier layer.
5. The semiconductor device according to claim 4 ,
wherein solder wettability of a surface of the barrier layer is lower than that of a surface of the pillar layer.
6. The semiconductor device according to claim 4 ,
wherein the pillar layer includes a material whose main component is Cu, and
wherein the barrier layer includes a material whose main component is Ni, and
wherein the bump includes a material whose main component is SnAg.
7. A semiconductor device comprising:
a terminal pad disposed on a main surface side of a semiconductor chip;
a pillar layer disposed over the terminal pad and electrically coupled to the terminal pad;
a barrier layer disposed over the pillar layer and electrically coupled to the pillar layer; and
a bump disposed over the barrier layer and electrically coupled to the barrier layer,
wherein an area of an interface of the bump and the barrier layer is smaller than that of a flat surface of the barrier layer on which the bump is disposed, and
wherein the bump has a flat upper surface opposing the interface of the bump and the barrier layer.
8. The semiconductor device according to claim 7 ,
wherein solder wettability of a surface of the barrier layer is lower than that of a surface of the pillar layer.
9. The semiconductor device according to claim 7 ,
wherein, in a cross section of the semiconductor device, a width of the bump is smaller than that of the barrier layer.
10. The semiconductor device according to claim 9 ,
wherein a width of the pillar layer is almost the same as that of the barrier layer.
11. The semiconductor device according to claim 9 ,
wherein the width of the pillar layer is larger than that of the barrier layer.
12. The semiconductor device according to claim 9 ,
wherein the width of the pillar layer is smaller than that of the barrier layer.
13. The semiconductor device according to claim 7 ,
wherein a shape of each of the barrier layer and the bump, obtained when the main surface side of the semiconductor chip is planarly viewed, is approximately circular, and
wherein a diameter of the bump is smaller than that of the barrier layer.
14. The semiconductor device according to claim 13 ,
wherein a shape of the pillar layer, obtained when the main surface side of the semiconductor chip is planarly viewed, is approximately circular, and
wherein a diameter of the pillar layer is almost the same as that of the barrier layer.
15. The semiconductor device according to claim 13 ,
wherein the shape of the pillar layer, obtained when the main surface side of the semiconductor chip is planarly viewed, is approximately circular, and
wherein the diameter of the pillar layer is larger than that of the barrier layer.
16. The semiconductor according to claim 13 ,
wherein the shape of the pillar layer, obtained when the main surface side of the semiconductor chip is planarly viewed, is approximately circular, and
wherein the diameter of the pillar layer is smaller than that of the barrier layer.
17. The semiconductor device according to claim 7 ,
wherein the pillar layer includes a material whose main component is Cu, and
wherein the barrier layer includes a material whose main component is Ni, and
wherein the bump includes a material whose main component is SnAg.