IP Library Granted Patent US 10,066,315
Granted Patent B2
US 10,066,315 · App. 15/100,597 · Granted Sep 4, 2018

Single crystal growing apparatus

Inventors: In Sik Bang (Gumi-si, KR); Cheol Hwan Kim (Gumi-si, KR)
Assignee: SK SILTRON CO., LTD.
C30B17/00C30B15/14C30B15/20C30B29/20C30B35/00C30B11/006Y10T117/1004Y10T117/1008
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Quick Facts
Patent No.
US 10,066,315
App. No.
15/100,597
Granted
Sep 4, 2018
Kind
B2
Abstract

An embodiment comprises: a chamber; a crucible provided in the chamber and accommodating a molten liquid which is a raw material for single crystal growth; a crucible screen disposed on the upper end of the crucible; and a moving unit for raising or lowering the crucible screen, wherein the crucible screen and a first upper adiabatic unit are raised to control the stroke distance, thereby preventing the impossibility of a lift-off process caused by a shortage of the stroke distance and the generation of cracks in single crystals.

Claims (32)

1. A single crystal growing apparatus comprising:

a chamber;

a crucible provided in the chamber and accommodating a molten liquid as a raw material for single crystal growth;

a crucible screen disposed on a top of the crucible;

a first upper thermal insulation part disposed on the crucible screen;

a second upper thermal insulation part spaced apart from the first upper thermal insulation part and disposed above the first upper thermal insulation part;

a conveying unit for raising or lowering the crucible screen and the first upper thermal insulation part together; and

a controller for controlling the conveying unit so as to adjust a distance between the first upper thermal insulation part and the second upper thermal insulation part,

wherein the controller measures a cycling distance of a growing single crystal, compares the measured cycling distance with a predetermined reference distance value, and controls the conveying unit so as lift up the crucible screen and the first upper thermal insulation part together based on a comparison result, and

the cycling distance is a distance by which the growing single crystal can be pulled up until it is brought into contact with the crucible screen.

2. The single crystal growing apparatus according to claim 1 ,

wherein, if the measured cycling distance is less than or equal to the predetermined reference distance value, the controller lifts up the crucible screen and the first upper thermal insulation part together.

3. The single crystal growing apparatus according to claim 2 , wherein the controller secures the cycling distance by lifting up the crucible screen and the first upper thermal insulation part together.

4. The single crystal growing apparatus according to claim 1 , wherein the predetermined reference distance value is one tenth of maximum cycling distance, and the maximum cycling distance is a distance between the crucible screen and a boundary surface of the molten liquid.

5. The single crystal growing apparatus according to claim 2 ,

wherein if the measured cycling distance is greater than the predetermined reference distance value, the controller determines whether a weight of a grown single crystal has reached a predetermined reference weight, and the predetermined reference weight is a total weight of the raw material.

6. The single crystal growing apparatus according to claim 1 , wherein the controller includes:

a measurement sensor for measuring a weight of the growing single crystal; and

a distance measurement sensor for measuring a distance between the growing single crystal and the crucible screen.

7. The single crystal growing apparatus according to claim 5 , wherein, if the weight of the grown single crystal has reached the predetermined reference weight, the controller performs a lift-off process for removing the grown single crystal from the crucible.

8. The single crystal growing apparatus according to claim 6 , wherein the controller including a further distance measurement sensor for measure the cycling distance.

9. The single crystal growing apparatus according to claim 1 , wherein the conveying unit includes:

at least one jig for binding the crucible screen and the first upper thermal insulation part together; and

a lifting part for raising or lowering the at least one jig.

10. The single crystal growing apparatus according to claim 9 , wherein the at least one jig includes:

a binding portion for surrounding the crucible screen and the first upper thermal insulation part together; and

a support portion passing through the second upper thermal insulation part and having one end connected to the binding portion and a remaining end connected to the lifting part.

11. The single crystal growing apparatus according to claim 10 , wherein the binding portion surrounds a top surface of the first upper thermal insulation part, an outer side surface of the first upper thermal insulation part, an outer side surface of the crucible screen, and at least a portion of a bottom surface of the crucible screen.

12. The single crystal growing apparatus according to claim 9 , wherein the at least one jig is provided in a plural number, and the plurality of jigs are arranged apart from each other.

13. The single crystal growing apparatus according to claim 9 , wherein the at least one jig passes through the first upper thermal insulation part and the second upper thermal insulation part, and has one end connected to the crucible screen and a remaining end connected to the lifting part.

14. The single crystal growing apparatus according to claim 1 , wherein a bottom surface of the first upper thermal insulation part is in contact with a top surface of the crucible screen.

15. The single crystal growing apparatus according to claim 1 , wherein the conveying unit raises or lowers the crucible screen and the first upper thermal insulation part together within a space between the first upper thermal insulation part and the second upper thermal insulation part.

Assignments (2)
CHANGE OF NAME Recorded Jul 3, 2018
From: LG SILTRON INCORPORATED
To: SK SILTRON CO., LTD.
Reel/Frame 046473/0747 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 31, 2016
From: BANG, IN SIK; KIM, CHEOL HWAN
To: LG SILTRON INCORPORATED
Reel/Frame 038852/0133 →
Priority Claims (1)
KR 10-2013-0148977 · Dec 3, 2013 · national
Continuity (1)
Related Publication 20160298260A1 · Oct 13, 2016