Semiconductor laser diode, method for producing a semiconductor laser diode and semiconductor laser diode arrangement
A semiconductor laser diode is specified, comprising a semiconductor layer sequence ( 1 ) with semiconductor layers applied vertically one above another with an active layer ( 11 ), which emits laser radiation via a radiation coupling-out surface during operation, wherein the radiation coupling-out surface is formed by a side surface of the semiconductor layer sequence ( 1 ), and a heat barrier layer ( 2 ) and a metallic contact layer ( 5 ) laterally adjacent to one another on a main surface ( 12 ) of the semiconductor layer sequence ( 1 ), wherein the heat barrier layer ( 2 ) is formed by an electrically insulating porous material ( 9 ). As a result, the heat arising during operation is conducted via the p-type electrode ( 5 ) to a heat sink ( 20 ) and the formation of a two-dimensional temperature gradient is avoided. A thermal lens in the edge emitter is thus counteracted. Furthermore, a method for producing a semiconductor laser diode and a semiconductor laser diode arrangement are specified.
1. A method for producing a semiconductor laser diode, comprising the following steps:
A) provision of a semiconductor layer sequence with semiconductor layers applied vertically over one another with an active layer, which emits laser radiation via a radiation output surface during operation, wherein the radiation output surface is formed by a side face of the semiconductor layer sequence;
B) large-area application of a thermal barrier layer on a main surface of the semiconductor layer sequence, wherein the thermal barrier layer is formed by an electrically insulating porous material;
C) exposure of a region of the main surface of the semiconductor layer sequence by removal of the thermal barrier layer in certain regions; and
D) application of a metallic contact layer on the exposed region of the main surface such that the contact layer and the thermal barrier layer are arranged laterally adjacent to one another on the main surface,
wherein prior to method step C, a capping layer made of an electrically insulating material is applied to the thermal barrier layer over a large area and the capping layer is removed together with the thermal barrier layer in certain regions in step C,
wherein a metallization layer is applied to the contact layer and the capping layer after method step D,
wherein the capping layer is free from pores, and
wherein the metallization layer is not broader than the thermal barrier layer.
2. The method according to claim 1 , in which in method step B a precursor material is deposited in a sol-gel method and the precursor material is converted by supercritical drying into an aerogel forming the electrically insulating porous material.
3. The method according to claim 2 , wherein the deposition of the precursor material is effected by spin coating.
4. The method according to claim 1 , wherein method step B has the following sub-steps:
B1) application of a layer with a plurality of particles;
B2) filling of interstices between the particles with an electrically insulating material; and
B3) removal of the particles to form pores in the electrically insulating material.
5. The method according to claim 4 , in which method steps B1 to B3 are carried out several times in succession.
6. The method according to claim 4 , in which the interstices are filled by means of atomic layer deposition in method step B2.
7. The method according to claim 4 , in which the particles are formed by polystyrene spheres.
8. The method according to claim 4 , in which the particles are removed by means of an oxygen plasma in method step B3.
9. The method according to claim 1 , in which the capping layer is applied by means of plasma-assisted chemical vapor deposition.
10. The method according to claim 1 , in which an etching stop layer is applied to the main surface of the semiconductor layer sequence prior to method step B.
11. The method according to claim 1 , in which a dry chemical etching process is performed in method step C.
12. The method according to claim 1 , wherein the contact layer has a strip-shaped embodiment on the main surface of the semiconductor layer sequence and adjoins the thermal barrier layer at at least two side faces, and
wherein method step C leads to a structuring of the thermal barrier layer.
13. A semiconductor laser diode, comprising:
a semiconductor layer sequence with semiconductor layers applied vertically over one another with an active layer, which emits laser radiation via a radiation output surface during operation, wherein the radiation output surface is formed by a side face of the semiconductor layer sequence; and
a thermal barrier layer and a metallic contact layer laterally adjacent to one another on a main surface of the semiconductor layer sequence,
wherein the thermal barrier layer is formed by an electrically insulating porous material,
wherein a dielectric capping layer is arranged on a side of the thermal barrier layer facing away from the semiconductor layer sequence,
wherein the capping layer is free from pores,
wherein a metallization layer is applied to the capping layer and the contact layer, and
wherein the metallization layer is not broader than the thermal barrier layer.
14. The semiconductor laser diode according to claim 13 ,
wherein the contact layer has a strip-shaped embodiment on the main surface of the semiconductor layer sequence and adjoins the thermal barrier layer at at least two side faces.
15. The semiconductor laser diode according to claim 14 , wherein the electrically insulating porous material comprises one or more of the following, selected from Al 2 O 3 , TiO 2 , Ta 2 O 5 , HfO 2 , ZrO 2 , AlN.
16. The semiconductor laser diode according to claim 13 , wherein the electrically insulating porous material comprises one or more of the following, selected from SiO 2 , Al 2 O 3 , TiO 2 , Ta 2 O 5 , HfO 2 , ZrO 2 , AlN.
17. A semiconductor laser diode arrangement comprising a semiconductor laser diode according to claim 13 , wherein the semiconductor laser diode is mounted on a heatsink in such a way that the thermal barrier layer is arranged between the semiconductor layer sequence and the heatsink.
18. A semiconductor laser diode, comprising:
a semiconductor layer sequence with semiconductor layers applied vertically over one another with an active layer, which emits laser radiation via a radiation output surface during operation, wherein the radiation output surface is formed by a side face of the semiconductor layer sequence; and
a thermal barrier layer and a metallic contact layer laterally adjacent to one another on a main surface of the semiconductor layer sequence,
wherein the thermal barrier layer is formed by an electrically insulating porous material,
wherein a metallization layer is applied to the thermal barrier layer and the contact layer, and
wherein the metallization layer is a solder metallization.
19. The semiconductor laser diode according to claim 18 , wherein a dielectric capping layer is arranged on a side of the thermal barrier layer facing away from the semiconductor layer sequence.
20. The semiconductor laser diode according to claim 19 , wherein the capping layer is free from pores.
21. The semiconductor laser diode according to claim 19 , wherein a metallization layer is applied to the capping layer and the contact layer.
22. A semiconductor laser diode, comprising:
a semiconductor layer sequence with semiconductor layers applied vertically over one another with an active layer, which emits laser radiation via a radiation output surface during operation, wherein the radiation output surface is formed by a side face of the semiconductor layer sequence; and
a thermal barrier layer and a metallic contact layer laterally adjacent to one another on a main surface of the semiconductor layer sequence, wherein the thermal barrier layer is formed by an electrically insulating porous material, and wherein a solder metallization is applied to the thermal barrier layer and the contact layer.
23. A method for producing a semiconductor laser diode, comprising the following steps:
A) provision of a semiconductor layer sequence with semiconductor layers applied vertically over one another with an active layer, which emits laser radiation via a radiation output surface during operation, wherein the radiation output surface is formed by a side face of the semiconductor layer sequence;
B) large-area application of a thermal barrier layer on a main surface of the semiconductor layer sequence, wherein the thermal barrier layer is formed by an electrically insulating porous material;
C) exposure of a region of the main surface of the semiconductor layer sequence by removal of the thermal barrier layer in certain regions;
D) application of a metallic contact layer on the exposed region of the main surface such that the contact layer and the thermal barrier layer are arranged laterally adjacent to one another on the main surface,
wherein a metallization layer is applied to the thermal barrier layer and the contact layer, and
wherein the metallization layer is a solder metallization.