Edge-emitting semiconductor laser diode and method for producing a plurality of edge-emitting semiconductor laser diodes
The invention relates to an edge-emitting semiconductor laser diode, having: —a semiconductor layer sequence, which comprises a bottom surface, a ridge waveguide on a top surface facing away from the bottom surface, and a side surface which is arranged transverse to the top surface, and —a first recess, which extends from the bottom surface to the top surface, wherein —a first region of the semiconductor layer sequence is removed from the side surface in the region of the first recess. The invention further relates to a method for producing a plurality of edge-emitting semiconductor laser diodes.
1. An edge emitting semiconductor laser diode comprising:
a semiconductor layer sequence comprising a bottom surface, a ridge waveguide at a top surface facing away from the bottom surface, and a side surface arranged transversely with respect to the top surface, and
a first cutout extending from the bottom surface toward the top surface, wherein
a first region of the semiconductor layer sequence is removed from the side surface in the region of the first cutout,
in plan view the first cutout does not overlap the ridge waveguide in lateral directions,
a filling material is arranged in the first cutout,
the filling material comprises a radiation-absorbing material or a radiation-reflecting material, and
the filling material is electrically insulating.
2. The edge emitting semiconductor laser diode as claimed in claim 1 ,
wherein a side surface of the semiconductor layer sequence that is recessed by the first cutout has a roughened surface.
3. The edge emitting semiconductor laser diode as claimed in claim 1 ,
wherein the first cutout extends in places along a length of the semiconductor laser diode.
4. The edge emitting semiconductor laser diode as claimed in claim 3 ,
wherein the first cutout extends completely along a length of the semiconductor laser diode.
5. The edge emitting semiconductor laser diode as claimed in claim 4 , wherein
a second cutout extends from the bottom surface toward the top surface of the semiconductor layer sequence,
a second region of the semiconductor layer sequence is removed from a front surface in the region of the second cutout, said second region adjoining the first region, and
the second cutout extends in places along a width of the semiconductor laser diode.
6. The edge emitting semiconductor laser diode as claimed in claim 5 ,
wherein in plan view the ridge waveguide regionally overlaps the second cutout in lateral directions.
7. The edge emitting semiconductor laser diode as claimed in claim 1 ,
wherein the filling material has a refractive index which is different than a refractive index of the semiconductor layer sequence.
8. The edge emitting semiconductor laser diode as claimed in claim 1 ,
wherein the filling material comprises a conversion material configured to convert laser radiation into electromagnetic secondary radiation of a different wavelength.
9. The edge emitting semiconductor laser diode as claimed in claim 1 ,
wherein there is arranged in the first cutout at least one sensor element configured to detect at least one of the following variables: electromagnetic radiation, electrical resistance, mechanical force, temperature.
10. The edge emitting semiconductor laser diode as claimed in claim 1 , wherein
a third cutout extends from the bottom surface toward the top surface of the semiconductor layer sequence, and
the third cutout is laterally completely surrounded by a material of the semiconductor layer sequence.
11. The edge emitting semiconductor laser diode as claimed in claim 10 ,
wherein in plan view the third cutout overlaps the ridge waveguide.
12. The edge emitting semiconductor laser diode as claimed in claim 10 ,
wherein a further filling material is arranged in the third cutout.
13. An edge emitting semiconductor laser diode comprising:
a semiconductor layer sequence comprising a bottom surface, a ridge waveguide at a top surface facing away from the bottom surface, and a side surface arranged transversely with respect to the top surface, and
a first cutout extending from the bottom surface toward the top surface, wherein
a first region of the semiconductor layer sequence is removed from the side surface in the region of the first cutout,
in plan view the first cutout does not overlap the ridge waveguide in lateral directions,
a filling material is arranged in the first cutout,
the filling material comprises a radiation-absorbing material or a radiation-reflecting material, and
there is arranged in the first cutout at least one sensor element configured to detect at least one of the following variables: electromagnetic radiation, electrical resistance, mechanical force, temperature.
14. An edge emitting semiconductor laser diode comprising:
a semiconductor layer sequence comprising a bottom surface, a ridge waveguide at a top surface facing away from the bottom surface, and a side surface arranged transversely with respect to the top surface, and
a first cutout extending from the bottom surface toward the top surface, wherein
a first region of the semiconductor layer sequence is removed from the side surface in the region of the first cutout,
in plan view the first cutout does not overlap the ridge waveguide in lateral directions,
a filling material is arranged in the first cutout,
the filling material comprises a radiation-absorbing material or a radiation-reflecting material,
a third cutout extends from the bottom surface toward the top surface of the semiconductor layer sequence, and
the third cutout is laterally completely surrounded by a material of the semiconductor layer sequence.
15. The edge emitting semiconductor laser diode as claimed in claim 14 ,
wherein in plan view the third cutout overlaps the ridge waveguide.
16. The edge emitting semiconductor laser diode as claimed in claim 14 ,
wherein a further filling material is arranged in the third cutout.