Photonic integrated device and manufacturing method thereof
A photonic integrated device is provided, includes a substrate, a two-dimensional material unit and semiconductor light-emitting units located at both sides thereof are disposed on the substrate; the two-dimensional material unit is provided with a luminescent two-dimensional material of which a luminous band is longer than that of the semiconductor light-emitting unit, and the semiconductor light-emitting unit provides a pump light source for the two-dimensional material unit to pump the luminescent two-dimensional material to emit light. The photonic integrated device in the present disclosure can obtain different luminous bands by changing the number of layers or kinds of the luminescent two-dimensional material. Meanwhile, the photonic integrated device according to the present disclosure adopts an optical pumping luminescence method without forming a p-n junction, which simplifies process difficulty compared with an electrical pumping luminescence method of manufacturing the p-n junction based on the luminescent two-dimensional material in the prior art.
1. A photonic integrated device, comprising:
a substrate, wherein:
a two-dimensional material unit and semiconductor light-emitting units located at both sides thereof are disposed on the substrate;
the two-dimensional material unit is comprised of a luminescent two-dimensional material of which a luminous band is longer than that of the semiconductor light-emitting units and of a dielectric film entirely coating the luminescent two-dimensional material, and
the semiconductor light-emitting units provide a pump light source for the two-dimensional material unit to pump the luminescent two-dimensional material to emit light.
2. The photonic integrated device of claim 1 , wherein a plurality of the semiconductor light-emitting units are arranged spaced apart at each of the both sides of the two-dimensional material unit.
3. The photonic integrated device of claim 2 , wherein light outlets of the plurality of semiconductor light-emitting units at the both sides of the two-dimensional material unit are opposite in a staggered manner.
4. The photonic integrated device of claim 3 , wherein the semiconductor light-emitting unit is a semiconductor laser or a superluminescent diode.
5. The photonic integrated device of claim 2 , wherein two to fifty the semiconductor light-emitting units are disposed at each of the both sides of the two-dimensional material unit; a distance between each two adjacent semiconductor light-emitting units is 20 μm to 500 μm; and the semiconductor light-emitting unit has a length of 0.5 mm to 5 mm and a width of 5 μm to 200 μm.
6. The photonic integrated device of claim 1 , wherein the luminescent two-dimensional material is selected from at least one of black phosphorus, transition metal compound, graphene, and boron nitride.
7. The photonic integrated device of claim 6 , wherein the luminescent two-dimensional material has a thickness of 1 ML to 2 μm.
8. The photonic integrated device of claim 1 , wherein
the semiconductor light-emitting unit comprises sequentially laminated a buffer layer, a lower coating layer, a lower waveguide layer, an active layer, an upper waveguide layer, an upper coating layer and an ohmic contact layer.
9. The photonic integrated device of claim 8 , wherein:
the buffer layer, the lower coating layer and a portion of the lower waveguide layer adjacent to the lower coating layer in a plurality of the semiconductor light-emitting units extend and connect into a whole; and
the active layer and a portion of the upper waveguide layer adjacent to the active layer in the plurality of the semiconductor light-emitting units extend and connect into a whole.
10. The photonic integrated device of claim 8 , wherein the dielectric film extends towards a top surface of the semiconductor light-emitting unit to form an extension part on which a positive electrode is disposed, and the positive electrode penetrates the extension part and is in contact with the ohmic contact layer; and a negative electrode is disposed on the substrate.
11. A manufacturing method of the photonic integrated device of claim 1 , comprising:
selecting a substrate and manufacturing an etching base layer on the substrate, the etching base layer comprising a buffer material layer, a lower coating material layer, a lower waveguide material layer, an active region material layer, an upper waveguide material layer, an upper coating material layer and an ohmic contact material layer sequentially laminated on the substrate;
etching the etching base layer in a direction perpendicular to the substrate, and forming a two-dimensional material filling slot and semiconductor light-emitting units located at both sides of the two-dimensional material filling slot on the substrate, wherein a plurality of the semiconductor light-emitting units are formed at both sides of the two-dimensional material filling slot, respectively;
forming a two-dimensional material unit which comprising a luminescent two-dimensional material and a dielectric film entirely coating the luminescent two-dimensional material in the two-dimensional material filling slot; and
manufacturing a positive electrode on the ohmic contact layer and a negative electrode on the substrate.
12. The manufacturing method of claim 11 , wherein a distance between a bottom surface of the two-dimensional material filling slot and the substrate is 20 nm to 500 nm less than the distance between a bottom of the active region material layer and the substrate; and the two-dimensional material filling slot has a length of 0.1 mm to 10 mm and a width of 10 μm to 500 μm.
13. The manufacturing method of claim 11 , wherein:
a plurality of the semiconductor light-emitting units are arranged spaced apart at each of the both sides of the two-dimensional material unit; and
light outlets of the plurality of semiconductor light-emitting units at the both sides of the two-dimensional material unit are opposite in a staggered manner.
14. The manufacturing method of claim 11 , wherein:
the two-dimensional material unit comprises the luminescent two-dimensional material and a dielectric film entirely coating the luminescent two-dimensional material; and
the semiconductor light-emitting unit comprises sequentially laminated a buffer layer, a lower coating layer, a lower waveguide layer, an active layer, an upper waveguide layer, an upper coating layer and an ohmic contact layer.
15. The manufacturing method of claim 14 , wherein:
the buffer layer, the lower coating layer and a portion of the lower waveguide layer adjacent to the lower coating layer in a plurality of the semiconductor light-emitting units extend and connect into a whole; and
the active layer and a portion of the upper waveguide layer adjacent to the active layer in the a plurality of the semiconductor light-emitting units extend and connect into a whole.
16. The manufacturing method of claim 14 , wherein:
the dielectric film extends towards a top surface of the semiconductor light-emitting unit to form an extension part on which a positive electrode is disposed;
the positive electrode penetrates the extension part and is in contact with the ohmic contact layer; and
a negative electrode is disposed on the substrate.
17. The manufacturing method of claim 12 , wherein:
the two-dimensional material unit comprises the luminescent two-dimensional material and a dielectric film entirely coating the luminescent two-dimensional material;
the semiconductor light-emitting unit comprises sequentially laminated a buffer layer, a lower coating layer, a lower waveguide layer, an active layer, an upper waveguide layer, an upper coating layer and an ohmic contact layer; and
the buffer layer, the lower coating layer and a portion of the lower waveguide layer adjacent to the lower coating layer in a plurality of the semiconductor light-emitting units extend and connect into a whole, the active layer and a portion of the upper waveguide layer adjacent to the active layer in the a plurality of the semiconductor light-emitting units extend and connect into a whole.
18. The manufacturing method of claim 13 , wherein:
the two-dimensional material unit comprises the luminescent two-dimensional material and a dielectric film entirely coating the luminescent two-dimensional material;
the semiconductor light-emitting unit comprises sequentially laminated a buffer layer, a lower coating layer, a lower waveguide layer, an active layer, an upper waveguide layer, an upper coating layer and an ohmic contact layer;
the dielectric film extends towards a top surface of the semiconductor light-emitting unit to form an extension part on which a positive electrode is disposed; and
the positive electrode penetrates the extension part and is in contact with the ohmic contact layer; and a negative electrode is disposed on the substrate.
19. The photonic integrated device of claim 3 , wherein:
the two-dimensional material unit comprises the luminescent two-dimensional material and a dielectric film entirely coating the luminescent two-dimensional material; and
the semiconductor light-emitting unit comprises sequentially laminated a buffer layer, a lower coating layer, a lower waveguide layer, an active layer, an upper waveguide layer, an upper coating layer and an ohmic contact layer.
20. The photonic integrated device of claim 4 , wherein:
the two-dimensional material unit comprises the luminescent two-dimensional material and a dielectric film entirely coating the luminescent two-dimensional material; and
the semiconductor light-emitting unit comprises sequentially laminated a buffer layer, a lower coating layer, a lower waveguide layer, an active layer, an upper waveguide layer, an upper coating layer and an ohmic contact layer.