Package method of OLED element and OLED package structure
View Patent ↗The present invention provides a package method of an OLED element and an OLED package structure. In the package method of the OLED element, according to the present invention, by manufacturing a circle of the retaining wall at the periphery of the OLED element, and then forming the laminated film covering the OLED element in the region surrounded by the retaining wall, and the laminated film comprises the few first barrier layers and the few buffer layers which are alternately stacking, and ultimately, forming the second barrier layer which completely covers the buffer layer and the top of the retaining wall on the outermost buffer layer of the laminated film, the OLED package structure of extremely strong sealing can be obtained. In the package method, a protective shield of extremely strong sealing for the OLED element is formed with the retaining wall and the outermost second barrier layer.
1. A packaging method of an OLED element, comprising steps of:
step 1 , providing a TFT substrate, and forming an OLED element and a circle of retaining wall at a periphery of the OLED element on the TFT substrate;
step 2 , forming a first barrier layer covering the OLED element in a region surrounded by the retaining wall on the TFT substrate, and forming a buffer layer on the first barrier layer;
step 3 , repeating operation of the step 2 a few times until an upper surface of an outermost buffer layer is close to or flush with a top surface of the retaining wall, so as to obtain a laminated thin film which is constructed by alternately stacking the few first barrier layers and the few buffer layers;
step 4 , forming a second barrier layer on the laminated thin film, such that the second barrier layer completely covers the laminated thin film and the top of the retaining wall to accomplish packaging of the OLED element;
wherein the retaining wall surrounds the OLED element and defines a space in which the OLED element is arranged, the laminated thin film being filled in the space such that the first barrier layers and the buffer layers are both confined in the space defined by the retaining wall, wherein both the first barrier layers and the buffer layers of the same size defined by the retaining wall and the first barrier layers and the buffer layers are formed by using one single mask that defines a forming region in which the first barrier layers and the buffer layers are formed on the TFT substrate so that the first barrier layers and the buffer layers area completely located inside the retaining wall and re confined in the in the space defined by the retaining wall.
2. The packaging method of the OLED element according to claim 1 , wherein implementation of the step 1 comprises steps of:
step 11 , providing the TFT substrate, and forming the OLED element on the TFT substrate with evaporation;
step 12 , arranging a forming region of the retaining wall on the TFT substrate, and employing a mask to shield other regions except the forming region on the TFT substrate, and depositing an inorganic material on the TFT substrate with plasma enhanced chemical vapor deposition or atomic layer deposition, and forming the circle of the retaining wall at the periphery of the OLED element.
3. The packaging method of the OLED element according to claim 1 , wherein implementation of the step 1 comprises steps of:
step 11 ′, depositing an inorganic material on the TFT substrate with plasma enhanced chemical vapor deposition or atomic layer deposition to form an inorganic material layer covering the TFT substrate, and employing one photolithographic process to pattern the inorganic material layer to obtain the circle of the retaining wall at the periphery of the TFT substrate;
step 12 ′, forming the OLED element in the region surrounded by the retaining wall on the TFT substrate with evaporation.
4. The packaging method of the OLED element according to claim 1 , wherein in the step 2 and the step 3 , forming the first barrier layer comprises the following steps: arranging a forming region of the first barrier layer on the TFT substrate, and employing the single mask to shield other regions except the forming region on the TFT substrate, and depositing an inorganic material on the TFT substrate with plasma enhanced chemical vapor deposition or atomic layer deposition to form the first barrier layer.
5. The packaging method of the OLED element according to claim 1 , wherein in the step 2 and the step 3 , forming the buffer layer comprises the following steps: arranging a forming region of the buffer layer on the TFT substrate, and employing the single mask to shield other regions except the forming region on the TFT substrate, and depositing an organic material on the TFT substrate with printing, evaporation or plasma enhanced chemical vapor deposition to form the buffer layer.
6. The packaging method of the OLED element according to claim 1 , wherein both an area of the first barrier layer and an area of the buffer layer are equal to an area of the region surrounded by the retaining wall on the TFT substrate.
7. A packaging method of an OLED element, comprising steps of:
step 1 , providing a TFT substrate, and forming an OLED element and a circle of retaining wall at a periphery of the OLED element on the TFT substrate;
step 2 , forming a first barrier layer covering the OLED element in a region surrounded by the retaining wall on the TFT substrate, and forming a buffer layer on the first barrier layer;
step 3 , repeating operation of the step 2 a few times until an upper surface of an outermost buffer layer is close to or flush with a top surface of the retaining wall, so as to obtain a laminated thin film which is constructed by alternately stacking the few first barrier layers and the few buffer layers;
step 4 , forming a second barrier layer on the laminated thin film, such that the second barrier layer completely covers the laminated thin film and the top of the retaining wall to accomplish packaging of the OLED element;
wherein the retaining wall surrounds the OLED element and defines a space in which the OLED element is arranged, the laminated thin film being filled in the space such that the first barrier layers and the buffer layers are both confined in the space defined by the retaining wall, wherein both the first barrier layers and the buffer layers of the same size defined by the retaining wall and the first barrier layers and the buffer layers are formed by using one single mask that defines a forming region in which the first barrier layers and the buffer layers are formed on the TFT substrate so that the first barrier layers and the buffer layers area completely located inside the retaining wall and re confined in the in the space defined by the retaining wall;
wherein in the step 2 and the step 3 , forming the first barrier layer comprises the following steps: arranging a forming region of the first barrier layer on the TFT substrate, and employing the single mask to shield other regions except the forming region on the TFT substrate, and depositing an inorganic material on the TFT substrate with plasma enhanced chemical vapor deposition or atomic layer deposition to form the first barrier layer; and
wherein in the step 2 and the step 3 , forming the buffer layer comprises the following steps: arranging a forming region of the buffer layer on the TFT substrate, and employing the single mask to shield other regions except the forming region of the TFT substrate, and depositing an organic material on the TFT substrate with printing, evaporation or plasma enhanced chemical vapor deposition to form the buffer layer.
8. The packaging method of the OLED element according to claim 7 , wherein implementation of the step 1 comprises steps of:
step 11 , providing the TFT substrate, and forming the OLED element on the TFT substrate with evaporation;
step 12 , arranging a forming region of the retaining wall on the TFT substrate, and employing a mask to shield other regions except the forming region on the TFT substrate, and depositing an inorganic material on the TFT substrate with plasma enhanced chemical vapor deposition or atomic layer deposition, and forming the circle of the retaining wall at the periphery of the OLED element.
9. The packaging method of the OLED element according to claim 7 , wherein implementation of the step 1 comprises steps of:
step 11 ′, depositing an inorganic material on the TFT substrate with plasma enhanced chemical vapor deposition or atomic layer deposition to form an inorganic material layer covering the TFT substrate, and employing one photolithographic process to pattern the inorganic material layer to obtain the circle of the retaining wall at the periphery of the TFT substrate;
step 12 ′, forming the OLED element in the region surrounded by the retaining wall on the TFT substrate with evaporation.
10. The packaging method of the OLED element according to claim 7 , wherein both an area of the first barrier layer and an area of the buffer layer are equal to an area of the region surrounded by the retaining wall on the TFT substrate.