Film for temporary fixing, film sheet for temporary fixing and semiconductor device
The film for temporary fixing of the present invention is a film for temporary fixing which is used in a processing method of a semiconductor wafer, the method including a temporary fixing step of temporarily fixing the semiconductor wafer to a support via the film for temporary fixing, a processing step of processing the semiconductor wafer that is temporarily fixed to the support, and a separation step of separating the processed semiconductor wafer from the support and the film for temporary fixing, contains (A) a high molecular weight component and (B) a silicone-modified resin, and has a modulus of elasticity of from 0.1 to 1000 MPa at 23° C. after being heated for 30 minutes at 110° C. and for 1 hour at 170° C.
1. A film for temporary fixing used in a processing method of a semiconductor wafer, the method including:
a temporary fixing step of temporarily fixing the semiconductor wafer to a support via the film for temporary fixing;
a processing step of processing the semiconductor wafer that is temporarily fixed to the support; and
a separation step of separating the processed semiconductor wafer from the support and the film for temporary fixing;
the film for temporary fixing comprising (A) a high molecular weight component and (B) a silicone-modified resin including a silicone-modified alkyd resin, wherein
a modulus of elasticity of the film for temporary fixing after being heated for 30 minutes at 110° C. and for 1 hour at 170° C. is from 0.1 to 1000 MPa at 23° C., and a 30° peel strength between a semiconductor wafer and the film for temporary fixing after being heated for 30 minutes at 110° C. and subsequently for 1 hour at 170° C., and heated for 30 minutes at 200° C. is 300 N/m or less.
2. The film for temporary fixing according to claim 1 , wherein (A) the high molecular weight component includes a (meth)acrylic copolymer having a glass transition temperature of from −50° C. to 50° C., a weight average molecular weight of from 100,000 to 1,200,000, and a crosslinkable functional group.
3. The film for temporary fixing according to claim 1 , wherein a content of (B) the silicone-modified resin is from 1 to 100 parts by mass with respect to 100 parts by mass of (A) the high molecular weight component.
4. The film for temporary fixing according to claim 1 , further comprising (C) a curing accelerator.
5. The film for temporary fixing according to claim 1 , wherein a melt viscosity of the film for temporary fixing before being cured is 15000 Pa·s or less at 120° C. and a thickness of the film for temporary fixing is from 10 to 150 μm.
6. The film for temporary fixing according to claim 1 , wherein (B) the silicone-modified resin further includes polyether-modified silicone, alkyl-modified silicone, or epoxy-modified silicone.
7. The film for temporary fixing according to claim 1 , wherein the modulus of elasticity of the film for temporary fixing after being heated for 30 minutes at 110° C. and for 1 hour at 170° C. is from 2.6 to 1000 MPa at 23° C., and a melt viscosity of the film for temporary fixing before being cured is 8500 Pa-s or less at 120° C.
8. A film sheet for temporary fixing comprising a support film exhibiting releasability and the film for temporary fixing according to claim 1 provided on the support film.
9. The semiconductor device comprising a semiconductor element obtained from a semiconductor wafer processed by using the film sheet for temporary fixing according to claim 8 .
10. A semiconductor device comprising a semiconductor element obtained from a semiconductor wafer processed by using the film for temporary fixing according to claim 1 .
11. A processing method of a semiconductor wafer, the method including:
a temporary fixing step of temporarily fixing a semiconductor wafer to a support via a film for temporary fixing, the film for temporary fixing comprising (A) a high molecular weight component and (B) a silicone-modified resin including a silicone-modified alkyd resin, wherein a modulus of elasticity of the film for temporary fixing after being heated for 30 minutes at 110° C. and for 1 hour at 170° C. is from 0.1 to 1000 MPa at 23° C., and a 30° peel strength between a semiconductor wafer and the film for temporary fixing after being heated for 30 minutes at 110° C. and subsequently for 1 hour at 170° C., and heated for 30 minutes at 200° C. is 300 N/m or less;
a processing step of processing the semiconductor wafer that is temporarily fixed to the support; and
a separation step of separating the processed semiconductor wafer from the support and the film for temporary fixing.
12. The processing method of a semiconductor wafer according to claim 11 , wherein (A) the high molecular weight component includes a (meth)acrylic copolymer having a glass transition temperature of from −50° C. to 50° C., a weight average molecular weight of from 100,000 to 1,200,000, and a crosslinkable functional group.
13. The processing method of a semiconductor wafer according to claim 11 , wherein a content of (B) the silicone-modified resin is from 1 to 100 parts by mass with respect to 100 parts by mass of (A) the high molecular weight component.
14. The processing method of a semiconductor wafer according to claim 11 , further comprising (C) a curing accelerator.
15. The processing method of a semiconductor wafer according to claim 11 , wherein a melt viscosity of the film for temporary fixing before being cured is 15000 Pa·s or less at 120° C. and a thickness of the film for temporary fixing is from 10 to 150 μm.
16. The processing method of a semiconductor wafer according to claim 11 , wherein (B) the silicone-modified resin further includes polyether-modified silicone, alkyl-modified silicone, or epoxy-modified silicone.
17. The processing method of a semiconductor wafer according to claim 11 , wherein the modulus of elasticity of the film for temporary fixing after being heated for 30 minutes at 110° C. and for 1 hour at 170° C. is from 2.6 to 1000 MPa at 23° C., and a melt viscosity of the film for temporary fixing before being cured is 8500 Pa-s or less at 120° C.