Charged particle beam device
A processing apparatus and a processing method are provided, which use a charged particle beam device that achieves defection of secondary electrons/reflected electrons at a large angle and cancels out noises of an electromagnetic deflector and an electrostatic deflector to suppress a position shift of a primary electron beam caused by circuit noises of a primary beam/secondary beam separation circuit. In the charged particle beam device that includes an electronic optical system radiating a concentrated electron beam onto a sample placed on a stage to perform scanning and captures an image of the sample, a reference signal and a signal generation unit of a voltage-source control signal applied to the electrostatic deflector generating the electrostatic deflector and a reference signal and a signal generation unit of a current-source control signal applied to the electromagnetic deflector generating a magnetic field are made common in an overlapping-electromagnetic-deflector control unit that controls a path of the secondary electrons/reflected electrons incident on a detector, and frequency characteristics and phase characteristics of the voltage control signal are coincident with those of the current-source control signal.
1. A charged particle beam apparatus comprising:
a detection unit that detects secondary electrons or reflected electrons generated from a sample by a charged particle beam radiated to a sample from a charged particle gun; and
an orthogonal electromagnetic deflection unit that deflects a traveling path of the secondary electrons or the reflected electrons towards the detection unit,
wherein the orthogonal electromagnetic deflection unit includes: a first electric-field deflector and a first magnetic-field deflector that respectively apply an electric field and a magnetic field in a first direction crossing a traveling direction of the charged particle beam emitted from the charged particle gun and a second electric-field deflector and a second magnetic-field deflector that respectively apply an electric field and a magnetic field in a second direction orthogonal to the first direction,
first and second current-source circuits respectively supplying currents to the first and second magnetic-field deflectors,
first and second voltage-source circuits respectively supplying voltages to the first and second electric-field deflectors,
a first control circuit having the first current-source circuit, the first voltage-source circuit, and a gain adjustment unit,
a second control circuit having the second current-source circuit, the second voltage-source circuit, and a gain adjustment unit,
a first common voltage generation unit supplying a voltage to the first current-source circuit and the first voltage-source circuit,
a second common voltage generation unit supplying a voltage to the second current-source circuit and the second voltage-source circuit,
first and second gain adjustment units adjusting the voltage from the first common voltage generation unit, and
third and fourth gain adjustment units adjusting the voltage from the second common voltage generation unit,
the first control circuit has a first addition circuit adding voltages from the first gain adjustment unit and the third gain adjustment unit, and
the second control circuit has a second addition circuit adding voltages from the second gain adjustment unit and the fourth gain adjustment unit.
2. The charged particle beam apparatus according to claim 1 ,
wherein the first gain adjustment unit and the third gain adjustment unit perform gain adjustment in such a manner that an amount of deflection of the charged particle beam by the magnetic field by the first magnetic-field deflector and an amount of deflection of the charged particle beam by the electric field by the first electric-field deflector are coincident with each other, and
the second gain adjustment unit and the fourth gain adjustment unit perform gain adjustment in such a manner that an amount of deflection of the charged particle beam by the magnetic field by the second magnetic-field deflector and an amount of deflection of the charged particle beam by the electric field by the second electric-field deflector are coincident with each other.