Method of forming a wavelength converted light emitting device
A method according to embodiments of the invention includes disposing a support layer ( 32 ) on a surface of a wavelength converting ceramic wafer ( 30 ). The wavelength converting ceramic wafer and the support layer are diced ( 42 ) to form wavelength converting members. A wavelength converting member is attached to a light emitting device. After attaching the wavelength converting member to the light emitting device, the support layer is removed.
1. A method comprising:
disposing a support layer on a surface of a wavelength converting ceramic wafer;
dicing the wavelength converting ceramic wafer and the support layer to form wavelength converting members;
attaching a wavelength converting member to a light emitting device; and
after attaching the wavelength converting member to the light emitting device, removing the support layer.
2. The method of claim 1 further comprising thinning the wavelength converting ceramic wafer after disposing the support layer on the surface of the wavelength converting ceramic wafer.
3. The method of claim 1 wherein the wavelength converting ceramic wafer has a thickness less than 100 μm.
4. The method of claim 1 wherein disposing the support layer on the surface of the wavelength converting ceramic wafer comprises spin casting a polymer layer on the surface of the wavelength converting ceramic wafer.
5. The method of claim 1 further comprising disposing a reflective material around the light emitting device prior to removing the support layer.
6. The method of claim 5 further comprising removing a portion of the reflective material after removing the support layer.
7. The method of claim 1 wherein the support material comprises a polymer and removing the support layer comprises removing with ozone plasma treatment.
8. The method of claim 1 wherein the wavelength converting member is rectangular.
9. A method comprising:
thinning a wavelength converting ceramic wafer to a thickness less than 500 μm in a first thinning process;
disposing a support layer on a surface of a wavelength converting ceramic wafer;
after disposing the support layer on a surface of the wavelength converting ceramic wafer, thinning the wavelength converting ceramic wafer to a thickness less than 200μm in a second thinning process;
dicing the wavelength converting ceramic wafer and the support layer to form wavelength converting members;
attaching a wavelength converting member to a light emitting device; and
after attaching the wavelength converting member to the light emitting device, removing the support layer.
10. The method of claim 9 further comprising:
disposing a reflective material around the light emitting device prior to removing the support layer; and removing a portion of the reflective material after removing the support layer.