IP Library Granted Patent US 10,269,417
Granted Patent B2
US 10,269,417 · App. 15/115,464 · Granted Apr 23, 2019

Apparatus for adaptive write assist for memory

Inventors: Gururaj K. Shamanna (Austin, TX); Stefan Rusu (Sunnyvale, CA); Eric A. Karl (Hillsboro, OR); Zheng Guo (Hillsboro, OR)
Assignee: INTEL CORPORATION
G11C11/419G11C7/04G11C7/22G11C29/021G11C29/028
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Quick Facts
Patent No.
US 10,269,417
App. No.
15/115,464
Granted
Apr 23, 2019
Kind
B2
Abstract

Described is an apparatus which comprises: a memory; a first power supply node to receive a first power supply; a second power supply node coupled to the memory to provide the memory with second power supply; a circuit coupled to the first and second power supply nodes, the circuit operable to dynamically modulate droop in the second power supply by adaptively adjusting signal characteristics of a write assist pulse.

Claims (41)

1. An apparatus comprising:

a processor;

a memory;

a first power supply node to receive a first power supply;

a second power supply node, coupled to the memory, to provide the memory with a second power supply; and

a circuit coupled to the first and second power supply nodes, the circuit operable to dynamically modulate droop in the second power supply dependent on at least a change in operating voltage, frequency, or temperature conditions of the processor by adaptively adjusting signal characteristics of a write assist pulse based on at least a first power supply voltage being below or above a programmable threshold voltage.

2. The apparatus of claim 1 , wherein the circuit is operable to dynamically modulate droop in the second power supply by adjusting pulse width of the write assist pulse.

3. The apparatus of claim 1 , wherein the circuit is operable to dynamically modulate droop in the second power supply by adjusting drive strength of one or more transistors coupled to the first and second power supply nodes.

4. The apparatus of claim 1 , wherein the circuit comprises a voltage sensor to sense the first power supply relative to the programmable threshold voltage.

5. The apparatus of claim 1 , wherein the circuit comprises a thermal sensor to sense temperature.

6. The apparatus of claim 1 , wherein the circuit is operable to enable negative bit-line based write assist and modulate the second power supply when the first power supply drops below a temperature threshold.

7. The apparatus of claim 6 , wherein the circuit is operable to enable only the negative bit-line based write assist when the first power supply is above the temperature threshold.

8. The apparatus of claim 1 , wherein the circuit comprises a digital comparator to compare a digital signal from a power control unit with one or more of a voltage threshold and temperature threshold.

9. The apparatus of claim 1 , wherein the memory is one of:

an SRAM;

a Register File; or

a CAM.

10. An apparatus comprising:

a processor;

a memory;

one or more power gate transistors coupled to a first power supply node to receive a first power supply, and a second power supply node to provide a second power supply to the memory; and

a circuit to dynamically control gate terminals of the one or more power gate transistors to modulate droop in the second power supply dependent on at least a change in an operating voltage, frequency, or temperature conditions of the processor and at least a first power supply voltage being below or above a programmable threshold voltage.

11. The apparatus of claim 10 , wherein the circuit is operable to dynamically modulate duration of the droop in the second power supply by adaptively adjusting pulse width of a write assist signal.

12. The apparatus of claim 10 , wherein the circuit comprises a voltage sensor to sense the first power supply relative to the programmable threshold voltage.

13. The apparatus of claim 10 , wherein the circuit comprises a thermal sensor to sense temperature.

14. The apparatus of claim 10 , wherein the circuit comprises a digital comparator to compare a digital signal from a power control unit with one or more of a voltage threshold and temperature threshold.

15. A system comprising:

a memory including a cache;

a processor coupled to the memory, the processor including:

a first power supply node to receive a first power supply;

a second power supply node coupled to the cache to provide the cache with a second power supply;

a circuit coupled to the first and second power supply nodes, the circuit operable to dynamically modulate droop in the second power supply dependent on at least a change in an operating voltage, frequency, or temperature conditions of the processor by adaptively adjusting signal characteristics of a write assist signal based on at least a first power supply voltage being below or above a programmable threshold voltage; and

a wireless interface for allowing the processor to communicatively couple to another device.

16. The system of claim 15 further comprising a display unit.

17. The system of claim 16 , wherein the display unit is a touch screen.

18. The system of claim 15 , wherein the circuit is operable to dynamically modulate droop in the second power supply by adjusting pulse width of the write assist pulse.

19. The system of claim 15 , wherein the cache is one of:

an SRAM;

a Register File; or

a CAM.

20. The system of claim 15 , wherein the circuit is operable to dynamically modulate droop in the second power supply by adjusting drive strength of one or more transistors coupled to the first and second power supply nodes.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 15, 2022
From: INTEL CORPORATION
To: TAHOE RESEARCH, LTD.
Reel/Frame 061175/0176 →
Continuity (1)
Related Publication 20170011793A1 · Jan 12, 2017