Bonding wire for semiconductor device
A bonding wire for a semiconductor device including a coating layer having Pd as a main component on the surface of a Cu alloy core material and a skin alloy layer containing Au and Pd on the surface of the coating layer has a Cu concentration of 1 to 10 at % at an outermost surface thereof and has the core material containing a metallic element of Group 10 of the Periodic Table of Elements in a total amount of 0.1 to 3.0% by mass, thereby achieving improvement in 2nd bondability and excellent ball bondability in a high-humidity heating condition. Furthermore, a maximum concentration of Au in the skin alloy layer is preferably 15 at % to 75 at %.
1. A bonding wire for a semiconductor device comprising:
a core material having Cu as a main component and containing a metallic element of Group 10 of the Periodic Table of Elements in a total amount of 0.1% by mass or more and 3.0% by mass or less;
a coating layer having Pd as a main component provided on a surface of the core material; and
a skin alloy layer containing Au and Pd provided on a surface of the coating layer,
wherein a concentration of Cu at an outermost surface of the wire is 1 at % or more and 10 at % or less, and the metallic element of Group 10 of the Periodic Table of Elements comprises Ni.
2. The bonding wire for a semiconductor device according to claim 1 , wherein the metallic element of Group 10 of the Periodic Table of Elements further comprises either or both of Pd and Pt.
3. The bonding wire for a semiconductor device according to claim 1 , wherein
the coating layer having Pd as a main component has a thickness of 20 nm or more and 90 nm or less, and
the skin alloy layer containing Au and Pd has a thickness of 0.5 nm or more and 40 nm or less and has a maximum concentration of Au of 15 at % or more and 75 at % or less.
4. The bonding wire for a semiconductor device according to claim 1 , wherein
the core material further contains Au, and
the total amount of Ni, Pd, Pt and Au in the core material is more than 0.1% by mass and 3.0% by mass or less.
5. The bonding wire for a semiconductor device according to claim 1 , wherein
the bonding wire further contains one or more of P, B, Be, Fe, Mg, Ti, Zn, Ag and Si, and
the total concentration of these elements in the entire wire is in a range of 0.0001% by mass or more and 0.01% by mass or less.
6. The bonding wire for a semiconductor device according to claim 1 , an element constituting the core material and an element constituting the skin alloy layer are diffused to the coating layer.
7. The bonding wire for a semiconductor device according to claim 1 , wherein, when measuring crystal orientations on a cross-section of the core material in a direction perpendicular to a wire axis of the bonding wire, a crystal orientation <100> angled at 15 degrees or less to a wire axis direction has a proportion of 30% or more among crystal orientations in the wire axis direction.