Rectifier circuit including a self-clamping transistor
View Patent ↗A rectifier circuit is described, which includes a cathode terminal, an anode terminal and, between the cathode terminal and the anode terminal, an electronic circuit which includes at least one MOSFET transistor including an integrated inverse diode, the drain-source breakdown voltage of the MOSFET transistor operated in the avalanche mode corresponding to the clamping voltage between the cathode terminal and the anode terminal of the rectifier circuit. In addition, a method is provided for operating a rectifier circuit which contains a cathode terminal, an anode terminal and, between the cathode terminal and the anode terminal, at least one MOSFET transistor including an integrated inverse diode, the drain-source breakdown voltage of the MOSFET transistor being selected in accordance with the clamping voltage between the cathode terminal and the anode terminal, and the MOSFET transistor being operated in the avalanche mode.
1. A rectifier circuit, comprising:
a cathode terminal;
an anode terminal;
an electronic circuit between the cathode terminal and the anode terminal, the electronic circuit including at least one MOSFET transistor having an integrated inverse diode, the electronic circuit being configured to operate the MOSFET transistor in an avalanche mode of the MOSFET transistor, the electronic circuit configured to rectify an alternating voltage applied between the cathode terminal and the anode terminal;
wherein a drain-source breakdown voltage of the MOSFET transistor operated in the avalanche mode corresponds to a clamping voltage between the cathode terminal and the anode terminal of the rectifier circuit, wherein the MOSFET transistor clamps voltages of the applied alternating voltage at the drain-source breakdown voltage of the MOSFET.
2. The rectifier circuit as recited in claim 1 , wherein the MOSFET transistor is a planar, vertical DMOSFET transistor.
3. The rectifier circuit as recited in claim 1 , wherein the MOSFET transistor is a trench MOS transistor.
4. The rectifier circuit as recited in claim 1 , wherein the MOSFET transistor is designed in such a way that a power loss incurred in the avalanche breakdown is distributed at least approximately uniformly over the active chip area.
5. The rectifier circuit as recited in claim 1 , wherein the MOSFET transistor is designed in such a way that an injection of charge carriers into a gate oxide of the MOSFET transistor is avoided.
6. An electronic component for rectification of AC voltages, the electronic component including at least one rectifier circuit comprising:
a cathode terminal;
an anode terminal;
an electronic circuit between the cathode terminal and the anode terminal, the electronic circuit including at least one MOSFET transistor having an integrated inverse diode, the electronic circuit being configured to operate the MOSFET transistor in avalanche mode of the MOSFET transistor, the electronic circuit configured to rectify an alternating voltage applied between the cathode terminal and the anode terminal;
wherein a drain-source breakdown voltage of the MOSFET transistor operated in the avalanche mode corresponds to a clamping voltage between the cathode terminal and the anode terminal of the rectifier circuit, wherein the MOSFET transistor clamps voltages of the applied alternating voltage at the drain-source breakdown voltage of the MOSFET.
7. A generator for the voltage supply of a motor vehicle, which includes at least one rectifier circuit comprising:
a cathode terminal;
an anode terminal;
an electronic circuit between the cathode terminal and the anode terminal, the electronic circuit including at least one MOSFET transistor having an integrated inverse diode, the electronic circuit being configured to operate the MOSFET transistor in an avalanche mode of the MOSFET transistor, the electronic circuit configured to rectify an alternating voltage applied between the cathode terminal and the anode terminal;
wherein a drain-source breakdown voltage of the MOSFET transistor operated in the avalanche mode corresponds to a clamping voltage between the cathode terminal and the anode terminal of the rectifier circuit, wherein the MOSFET transistor clamps voltages of the applied alternating voltage at the drain-source breakdown voltage of the MOSFET.