Semiconductor light emitting device

1. A semiconductor light emitting device, including:

a plurality of semiconductor layers grown on a growth substrate, the plurality of semiconductor layers including a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type different from the first conductivity type, and an active layer interpositioned between the first and second semiconductor layers, for generating light by electron-hole recombination;

a non-conductive reflective film arranged on an opposite side of the growth substrate and coupled to the plurality of the semiconductor layers;

one or more electrodes formed on the non-conductive reflective film and electrically connected to the plurality of semiconductor layers, each of the one or more electrodes respectively including a lower electrode layer as part of the one or more electrodes for reflecting light generated in the active layer and then passing through the non-conductive reflective film and for defining a crack resistant layer, and an upper electrode layer arranged on the lower electrode layer for preventing a foreign material from penetrating into the lower electrode layer and having a thickness and a thermal expansion coefficient to define an anti-burst layer to prevent bursting of the lower electrode layer, the lower electrode layer having a higher reflectance and a higher thermal expansion coefficient than the upper electrode layer, and the one or more electrodes covering a portion of an area of the non-conductive reflective film;

an electrical connecting part for electrically connecting the plurality of semiconductor layers to one of the one or more electrodes, the electrical connecting part passing through the non-conductive reflective film and filled with the one of the one or more electrodes; and

an additional electrode disposed under the electrical connecting part and between the plurality of the semiconductor layers and the non-conductive reflective film;

wherein the one of the one or more electrodes is formed on the non-conductive film and within the electrical connecting part in such a manner that at least a portion of the lower electrode layer of the one of the one or more electrodes is formed on the non-conductive reflective film and within the electrical connecting part to reflect the light generated in the active layer; and

wherein the lower electrode layer has a thickness of at least 1000 Å.

2. The semiconductor light emitting device according to claim 1 , wherein the one or more electrodes respectively have a structure of alternating layers of a lower electrode layer and an upper electrode layer.

3. The semiconductor light emitting device according to claim 1 , wherein the one or more electrodes cover at least 50% of the area of the non-conductive reflective film.

4. The semiconductor light emitting device according to claim 1 , wherein the one or more electrodes have a thickness of at least 2 μm.

5. The semiconductor light emitting device according to claim 1 , wherein the lower electrode layer has a thickness of at least 5000 Å.

6. The semiconductor light emitting device according to claim 1 , wherein the one or more electrodes respectively have at least one lower electrode layer and at least one upper electrode layer, in which a combined thickness of the at least one lower electrode layer and the at least one upper electrode layer is 1 μm or greater.

7. The semiconductor light emitting device according to claim 1 , wherein the one or more electrodes respectively have at least one lower electrode layer and at least one upper electrode layer, in which a combined thickness of the at least one lower electrode layer and the at least one upper electrode layer is 2 μm or greater.

8. The semiconductor light emitting device according to claim 1 , wherein the one or more electrodes respectively have a top layer lower than 5000 Å in thickness.

9. The semiconductor light emitting device according to claim 8 , wherein the top layer includes at least one selected from Au and Pt.

10. The semiconductor light emitting device according to claim 1 , wherein the lower electrode layer includes at least one selected from Al and Ag.

11. The semiconductor light emitting device according to claim 1 , wherein the upper electrode layer includes at least one selected from Ti and Ni.

12. The semiconductor light emitting device according to claim 1 , wherein the non-conductive reflective film includes a Distributed Bragg Reflector.

13. The semiconductor light emitting device according to claim 1 , wherein the one or more electrodes have a thickness of at least 2 μm, and the one or more electrodes have a top layer of 5000 Å or less in thickness.

14. The semiconductor light emitting device according to claim 1 , wherein the lower electrode layer includes Al,

wherein the plurality of semiconductor layers is composed of a Group III nitride semiconductor, and

wherein the non-conductive reflective film includes a Distributed Bragg Reflector.

15. The semiconductor light emitting device according to claim 1 , wherein the lower electrode layer is the bottom layer of the electrode.