Semiconductor device with surface integrated focusing element and method of producing a semiconductor device with focusing element
The semiconductor device comprises a semiconductor substrate ( 1 ), a sensor or sensor array ( 2 ) arranged at a main surface ( 10 ) of the substrate, an integrated circuit ( 3 ) arranged at or above the main surface, and a focusing element ( 17 ) comprising recesses ( 4 ) formed within a further main surface ( 11 ) of the substrate opposite the main surface. The focusing element may be arranged opposite the sensor or sensor array ( 2 ), which may be a photosensor or photodetector or an array of photosensors or photodetectors, for instance. The focusing element ( 17 ) is formed by etching the recesses ( 4 ) into the semiconductor material.
1. A semiconductor device, comprising:
a semiconductor substrate with a main surface and a further main surface opposite the main surface;
a sensor or sensor array at the main surface;
an integrated circuit at or above the main surface;
a focusing element at the further main surface, the focusing element being provided by recesses formed within the semiconductor material of the substrate at the further main surface;
a cover arranged at the main surface; and
a cavity in the substrate at the main surface of the substrate, the sensor or sensor array being arranged in the cavity, the cover covering or closing the cavity,
wherein the integrated circuit is arranged in the cover, and
wherein the cover is a further semiconductor substrate or wafer.
2. The semiconductor device of claim 1 , wherein
the sensor or sensor array is an array of photosensors or photodetectors; and
each of the recesses of the focusing element is provided for more than one of the photosensors or photodetectors.
3. The semiconductor device of claim 1 , wherein the focusing element is a diffracting element.
4. The semiconductor device of claim 1 , wherein the focusing element is a zone plate comprising a set of radially symmetric Fresnel zones.
5. The semiconductor device of claim 4 , further comprising:
a covering layer on the focusing element, the covering layer generating a phase shift zone plate.
6. The semiconductor device of claim 1 , wherein the focusing element is a Fresnel lens.
7. The semiconductor device of claim 1 , further comprising:
a covering layer covering the focusing element without filling the recesses.
8. A method of producing a semiconductor device with focusing element, comprising:
arranging a sensor or sensor array at a main surface of a semiconductor substrate;
providing an integrated circuit at or above the main surface;
etching a focusing element in the semiconductor material of the substrate at a further main surface of the substrate opposite the main surface; and
applying a cover to the main surface, before the focusing element is etched,
wherein the cover is provided with the integrated circuit,
wherein a cavity is provided in the substrate at the main surface of the substrate, the sensor or sensor array is arranged in the cavity, and the cover is provided to cover or close the cavity, and
wherein the cover is a further semiconductor substrate or wafer.
9. The method of claim 8 , wherein the focusing element is etched in the shape of a zone plate or Fresnel lens.
10. A semiconductor device, comprising:
a semiconductor substrate with a main surface and a further main surface opposite the main surface;
a sensor or sensor array at the main surface;
a cover at the main surface;
an integrated circuit in the cover;
recesses formed within the semiconductor material of the substrate at the further main surface, the recesses providing a focusing element; and
a cavity in the substrate at the main surface of the substrate, the sensor or sensor array being arranged in the cavity, the cover covering or closing the cavity,
wherein the cover is a further semiconductor substrate or wafer.
11. The semiconductor device of claim 10 , wherein
the sensor or sensor array is an array of photosensors or photodetectors; and
each of the recesses of the focusing element is provided for more than one of the photosensors or photodetectors.
12. The semiconductor device of claim 10 , wherein the focusing element is a diffracting element.
13. The semiconductor device of claim 10 , wherein the focusing element is a zone plate comprising a set of radially symmetric Fresnel zones.
14. The semiconductor device of claim 13 , further comprising:
a covering layer on the focusing element, the covering layer generating a phase shift zone plate.
15. The semiconductor device of claim 10 , wherein the focusing element is a Fresnel lens.
16. The semiconductor device of claim 10 , further comprising:
a covering layer covering the focusing element without filling the recesses.