Production of optoelectronic components

1. A method of producing optoelectronic components, comprising:

providing a carrier;

arranging optoelectronic semiconductor chips on the carrier;

forming a conversion layer for radiation conversion on the carrier, wherein the optoelectronic semiconductor chips are surrounded by the conversion layer; and

carrying out a singulation process to form separate optoelectronic components, wherein at least the conversion layer is severed,

wherein the carrier is a metallic carrier comprising recesses extending through the carrier from a front side to a rear side of the carrier,

during forming the conversion layer on the carrier, the conversion layer is arranged in the recesses; and

the carrier is structured into separate carrier elements after forming the conversion layer and before carrying out the singulation process.

2. The method according to claim 1 , wherein structuring the carrier comprises carrying out an etching process.

3. The method according to claim 1 , wherein, after structuring the carrier, a reflective compound is arranged in intermediate regions between the carrier elements.

4. The method according to claim 1 , wherein forming the conversion layer comprises carrying out a potting process or a molding process.

5. The method according to claim 1 , wherein the optoelectronic semiconductor chips are volume emitters.

6. The method according to claim 1 , wherein each of the separate optoelectronic components comprises a section of the conversion layer that constitutes a front side and a part of a circumferential lateral surface of the optoelectronic component.

7. The method according to claim 1 , wherein each of the separate optoelectronic components comprises a section of the conversion layer and an optoelectronic semiconductor chip, wherein the optoelectronic semiconductor chip is surrounded by the conversion layer section such that a corresponding material thickness of the conversion layer section is present at a front side and at a circumference of the optoelectronic semiconductor chip.

8. The method according to claim 1 , wherein the recesses of the carrier comprise a shape widening in a stepped manner.

9. The method according to claim 1 , wherein the recesses of the carrier comprise a shape widening in a stepped manner in a direction of the rear side of the carrier, and

the recesses comprise two partial regions having different lateral dimensions.

10. The method according to claim 1 , wherein the structuring of the carrier into the separate carrier elements is carried out such that the recesses or partial regions of the recesses are arranged at the edge of the separate carrier elements.

11. The method according to claim 1 , wherein the conversion layer is at least one of a layer comprising a radiation-transmissive basic material, phosphor particles and a filler, or a layer adjoining a front side and a circumference of the optoelectronic semiconductor chips.