Organic light emitting display panel and manufacturing method thereof, display device
The present invention discloses an organic light emitting display panel and manufacturing method thereof and a display device, which can reduce the critical dimension bias of the pixel defining layer and improve the display uniformity. The organic light emitting display panel provide by the present invention comprises: a pixel defining layer, which is provided with a plurality of light emitting material filling areas, being characterized by further comprising: a metal layer provided on the pixel defining layer; the metal layer is provided with openings corresponding to the light emitting material filling areas respectively. The solutions provided by the present invention are used to improve the display effect of the organic light emitting display device.
1. A method of manufacturing an organic light emitting display panel comprising:
forming a first electrode;
forming a pixel defining material layer and curing the pixel defining material layer;
forming a patterned metal layer with openings corresponding to preset light emitting material filling areas respectively;
forming light emitting material filling areas in the pixel defining material layer below the openings by a patterning process;
filling light emitting material; and
forming a second electrode,
wherein the width of the opening is larger than an opening width of the light emitting material filling area.
2. The method of claim 1 , wherein the step of forming a patterned metal layer comprises:
directly forming the patterned metal layer using an evaporation method with the shielding of a mask; or
forming a metal material layer followed by forming the patterned metal layer by a patterning process.
3. The method of claim 1 , wherein the step of forming a patterned metal layer comprises:
directly forming the patterned metal layer by means of an evaporation method with the shielding of a mask; or
forming a metal material layer followed by forming the patterned metal layer by a patterning process.
4. The method of claim 1 , wherein the forming light emitting material filling areas in the pixel defining material layer below the openings by a patterning process comprises:
coating a photoresist and performing exposure and development;
performing dry etching to remove the pixel defining material exposed and form the light emitting material filling areas;
peeling the remaining photoresist.
5. The method of claim 1 , wherein the step of forming light emitting material filling areas in the pixel defining material layer below the openings by a patterning process comprises:
coating a photoresist and performing exposure and development;
performing dry etching to remove the pixel defining material exposed and form the light emitting material filling areas;
peeling the remaining photoresist.
6. The method of claim 4 , wherein
the pixel defining layer comprises polyimide;
the etching gas used in the dry etching comprises oxygen, and further comprises CF4 or SF6, or a mixture of CF4 and SF6 used for adjusting an etching slope angle.
7. The method of claim 1 , wherein when a photosensitive material is used for the pixel defining material layer, the step of forming light emitting material filling areas in the pixel defining material layer below the openings by a patterning process comprises:
coating a photoresist and performing exposure;
peeling the remaining photoresist and removing the exposed pixel defining material by an ashing process to form the light emitting material filling areas.
8. The method of claim 1 , wherein when a photosensitive material is used for the pixel defining material layer, the step of forming light emitting material filling areas in the pixel defining material layer below the openings by a patterning process comprises:
coating a photoresist and performing exposure;
peeling the remaining photoresist and removing the exposed pixel defining material by an ashing process to form the light emitting material filling areas.
9. The method of claim 1 , wherein before the process of forming a first electrode, the method further comprises:
a process of forming an active layer, a gate insulator layer, a gate metal layer and a source/drain metal layer of a thin film transistor on a substrate;
a process of forming an interlayer insulation layer and vias on the substrate on which the thin film transistor is formed.