Metal oxide thin film transistor and manufacturing method thereof, display substrate and display device
The present disclosure provides a metal oxide thin film transistor, wherein an oxygen deficiency adsorptive removal layer comprising an oxygen deficiency adsorptive removal material is provided between an active layer and a source, and/or between the active layer and a drain. The standard Gibbs free energy of formation of an oxide of the oxygen deficiency adsorptive removal material in a unit volume is larger than that of a metal oxide in the active layer. The present disclosure further provides a display substrate comprising the metal oxide thin film transistor and a display device comprising the display substrate.
1. A metal oxide thin film transistor, wherein an oxygen deficiency adsorptive removal layer comprising an oxygen deficiency adsorptive removal material is provided between an active layer and a source, and/or between the active layer and a drain, and the standard Gibbs free energy of formation of an oxide of the oxygen deficiency adsorptive removal material in a unit volume is larger than that of a metal oxide in the active layer.
2. The metal oxide thin film transistor according to claim 1 , wherein the oxygen deficiency adsorptive removal layer has a thickness ranging from 100 to 3000 Å.
3. The metal oxide thin film transistor according to claim 1 , wherein the oxygen deficiency adsorptive removal material is selected from the group consisting of Hf, Ti, Be, Al, Si and Ca.
4. The metal oxide thin film transistor according to claim 1 , wherein the oxygen deficiency adsorptive removal material is the same as materials of the source and the drain.
5. The metal oxide thin film transistor according to claim 1 , wherein the metal oxide in the active layer is selected from oxides of Zn, In, Sn and Ga.
6. The metal oxide thin film transistor according to claim 1 , wherein the metal oxide in the active layer comprises a metal nitrogen oxide.
7. A display substrate comprising the metal oxide thin film transistor according to claim 1 .
8. A display device comprising the display substrate according to claim 7 , the display substrate comprising a metal oxide thin film transistor, in the metal oxide thin film transistor, an oxygen deficiency adsorptive removal layer comprising an oxygen deficiency adsorptive removal material is provided between an active layer and a source, and/or between the active layer and a drain, and the standard Gibbs free energy of formation of an oxide of the oxygen deficiency adsorptive removal material in a unit volume is larger than that of a metal oxide in the active layer.
9. The display device according to claim 8 , wherein the oxygen deficiency adsorptive removal layer has a thickness ranging from 100 to 3000 Å.
10. The display device according to claim 8 , wherein the oxygen deficiency adsorptive removal material is selected from the group consisting of Hf, Ti, Be, Al, Si and Ca.
11. The display device according to claim 8 , wherein the oxygen deficiency adsorptive removal material is the same as materials of the source and the drain.
12. The display substrate according to claim 7 , wherein the oxygen deficiency adsorptive removal layer has a thickness ranging from 100 to 3000 Å.
13. The display substrate according to claim 7 , wherein the oxygen deficiency adsorptive removal material is selected from the group consisting of Hf, Ti, Be, Al, Si and Ca.
14. The display substrate according to claim 7 , wherein the oxygen deficiency adsorptive removal material is the same as materials of the source and the drain.
15. The display substrate according to claim 7 , wherein the metal oxide in the active layer is selected from oxides of Zn, In, Sn and Ga.
16. The display substrate according to claim 7 , wherein the metal oxide in the active layer comprises a metal nitrogen oxide.
17. A method for manufacturing a metal oxide thin film transistor, comprising steps of:
forming, on a substrate, a gate layer, a gate insulating layer and an active layer successively, and performing patterning process treatment on each layer;
forming, on the active layer, an oxygen deficiency adsorptive removal layer comprising an oxygen deficiency adsorptive removal material;
forming a source/drain electrode layer;
performing patterning process treatment on the source/drain electrode layer and the oxygen deficiency adsorptive removal layer,
wherein the oxygen deficiency adsorptive removal layer is between the active layer and the source, and/or between the active layer and the drain, and the standard Gibbs free energy of formation of an oxide of the oxygen deficiency adsorptive removal material in a unit volume is larger than that of a metal oxide in the active layer.
18. The method according to claim 17 , further comprising an annealing step after forming the source/drain electrode layer.
19. The method according to claim 18 , wherein the annealing step is performed at a temperature of 100 to 350° C. for 30 to 90 minutes.
20. The method according to claim 17 , further comprising a step of forming a passivation layer above a resultant metal oxide thin film transistor.