GAS-PHASE DEPOSITION PROCESS
The disclosure relates to a layer-deposition process that includes: injecting a first reagent in gaseous phase into the deposition chamber via a first injection path, and injecting a second gas-phase reagent into the deposition chamber via a second injection path, the second injection path being separate from the first injection path. The pressure in the deposition chamber is greater than a predetermined value for the entire duration of the process. The process is characterized in that the first reagent is fed into the deposition chamber according to a first pulse sequence, and the second reagent is fed into the chamber according to a second pulse sequence. The first pulse sequence and the second pulse sequence are out of phase with one another.
1 . A method for gas phase deposition of a layer by reaction between two reagents on the surface of a substrate placed in a deposition chamber, the method comprising:
injecting a first reagent in a gas phase into the deposition chamber through a first injection route;
injecting a second reagent in a gas phase into the deposition chamber through a second injection route, the second injection route being distinct from the first injection route;
wherein a pressure in the deposition chamber is greater than 500 mTorr during the whole duration of the method and the first reagent is introduced into the deposition chamber according to a first sequence of pulses, the second reagent is introduced into the deposition chamber according to a second sequence of pulses, the first sequence of pulses and the second sequence of pulses being phase-shifted.
2 . The method according to claim 1 , wherein the pressure in the deposition chamber is greater than 1 Torr.
3 . The method according to claim 1 , wherein the first reagent and the second reagent react together for a reaction time less than the travel time of the first reagent and of the second reagent between a system for injecting the first and second reagents and the surface of the substrate, the system for injecting the first and second reagents comprising the first injection route and the second injection route.
4 . The method according to claim 1 , wherein the first sequence of pulses is periodic and has a first period.
5 . The method according to claim 1 , wherein the second sequence of pulses is periodic and has a second period.
6 . The method according to claim 1 , wherein the first sequence of pulses is periodic and has a first period and the second sequence of pulses is periodic and has a second period, and the first period and the second period are equal.
7 . The method according to claim 1 , wherein an overlapping between the pulses of the first sequence of pulses and the pulses of the second sequence of pulses is zero.
8 . The method according to claim 1 , wherein an interval between two successive pulses of the first sequence of pulses is greater than a duration of the pulses of the first sequence of pulses.
9 . The method according to claim 1 , wherein an interval between two successive pulses of the second sequence of pulses is greater than a duration of the pulses of the second sequence of pulses.
10 . The method according to claim 1 , wherein the pressure in the deposition chamber is between 1.5 Torr and 3 Torr.
11 . The method according to claim 1 , wherein a duration of a pulse of the first sequence of pulses is between 0.02 second and 5 seconds.
12 . The method according to claim 1 , wherein an interval between two pulses of the first sequence of pulses is between 0.5 second and 10 seconds.
13 . The method according to claim 1 , wherein a duration of a pulse of the second sequence of pulses is between 0.02 second and 5 seconds.
14 . The method according to claim 1 , wherein an interval between two pulses of the second sequence of pulses is between 0.5 second and 10 seconds.
15 . The method according to claim 1 , wherein a duration of the pulses of the first sequence of pulses and of the second sequence of pulses is between 50 ms and 200 ms.
16 . The method according to claim 1 , wherein a shift between the pulses of the first sequence of pulses and the pulses of the second sequence of pulses is comprised between 0 and 500 ms.
17 . The method according to claim 1 , comprising the deposition of a layer of a conductive transparent oxide of Al-doped ZnO type.