IP Library Granted Patent US 10,153,142
Granted Patent B2
US 10,153,142 · App. 15/127,461 · Granted Dec 11, 2018

LiCoO

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Quick Facts
Patent No.
US 10,153,142
App. No.
15/127,461
Granted
Dec 11, 2018
Kind
B2
Abstract

A sputtering target having a composition of LiCoO 2 , wherein a resistivity of the target is 100 Ωcm or less, and a relative density is 80% or higher. The sputtering target of the present invention is effective for use in forming a positive electrode thin film in all-solid-state thin-film lithium ion secondary batteries equipped in vehicles, information and communication electronics, household appliances, and the like.

Claims (3)

1. A LiCoO 2 sputtering target having a composition configured from a LiCoO 2 single phase, wherein the LiCoO 2 sputtering target is a cylinder and a sputtering face of the LiCoO 2 sputtering target is an outer peripheral surface of the cylinder, and wherein an average resistivity of the outer peripheral surface is 50 Ωcm or less, a relative density of the LiCoO 2 sputtering target is 83% or higher, an average resistivity of a position corresponding to half a thickness of a cylindrical wall of the LiCoO 2 sputtering target is not greater than double the average resistivity of the outer peripheral surface, and an in-plane maximum resistivity of the LiCoO 2 sputtering target is not greater than double the average resistivity of the outer peripheral surface, the average resistivity being an average value of measurements of resistivity at twelve points on the outer peripheral surface including four points equiangularly in a circumferential direction of the cylinder at 5 mm spacing from an end of the cylinder, four points equiangularly in a circumferential direction of the cylinder at 5 mm spacing from an opposite end of the cylinder, and four points equiangularly in a circumferential direction of the cylinder at a mid-length of the cylinder.

2. A method of producing the LiCoO 2 sputtering target according to claim 1 , comprising subjecting a lithium cobalt oxide powder to cold isostatic press to be molded into a cylindrical shape, and thereafter repeatedly performing heat treatment to the resultant molded article in an atmosphere or in an oxygen atmosphere two or more times to produce a cylindrical target, wherein temperature of final heat treatment is set to be 950 to 1150° C., temperature of any preceding heat treatment is set to be a temperature that is not higher than the temperature of the final heat treatment, and a process of cooling to a room temperature is provided between the respective heat treatment processes.

3. The LiCoO 2 sputtering target according to claim 1 , wherein the relative density is 85% or higher.

Assignments (2)
CHANGE OF ADDRESS Recorded Aug 11, 2021
From: JX NIPPON MINING & METALS CORPORATION
To: JX NIPPON MINING & METALS CORPORATION
Reel/Frame 057160/0114 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 20, 2016
From: SATOH, KAZUYUKI
To: JX NIPPON MINING & METALS CORPORATION
Reel/Frame 039800/0723 →