Sputtering target comprising Ni—P alloy or Ni—Pt—P alloy and production method therefor
A method of producing a Ni—P alloy sputtering target, wherein a Ni—P alloy having a P content of 15 to 21 wt % and remainder being Ni and unavoidable impurities is melted and atomized to prepare a Ni—P alloy atomized powder having an average grain size of 100 μm or less, the Ni—P alloy atomized powder is mixed with a pure Ni atomized powder, and the obtained mixed powder is hot pressed. An object of the present invention is to provide a method of producing a Ni—P alloy sputtering target which achieves a small deviation from an intended composition.
1. A method of producing a Ni—P alloy sputtering target, wherein a Ni—P alloy containing 15 to 17 wt % of P and remainder being Ni and unavoidable impurities is melted and atomized to prepare a Ni—P alloy atomized powder having an average grain size of 100 μm or less, the Ni—P alloy atomized powder is mixed with a Ni atomized powder, and the obtained mixed powder is hot pressed to produce a sintered compact containing 1 to 10 at % of P and a remainder of Ni and unavoidable impurities.
2. The method of producing a Ni—P alloy sputtering target according to claim 1 , wherein hot isostatic pressing is performed after the hot press.
3. A method of producing a Ni—Pt—P alloy sputtering target, wherein a Ni—P alloy containing 15 to 21 wt % of P and remainder being Ni and unavoidable impurities is melted and atomized to prepare a Ni—P alloy atomized powder having an average grain size of 100 μm or less, the Ni—P alloy atomized powder is mixed with a Ni atomized powder and a Pt powder, and the obtained mixed powder is hot pressed to produce a sintered compact containing 1 to 10 at % of P, 1 to 30 at % of Pt, and a remainder of Ni and unavoidable impurities.
4. The method of producing a Ni—Pt—P sputtering target according to claim 3 , wherein hot isostatic pressing is performed after the hot press.