Integrated circuit electrostatic discharge protection
Integrated circuits (ICs) include electrostatic discharge protection including a transistor having a drain operably coupled to a first rail of the integrated circuit and a source operatively coupled to a second rail of the integrated circuit. A voltage regulating trigger circuit is operatively coupled to the first rail and to a gate of the transistor to turn on of the transistor responsive to an ESD event affecting the integrated circuit, wherein the voltage regulating trigger circuit limits a potential of the first rail to a first potential and a gate potential of the transistor to a second potential, less than the first potential but sufficient to turn the transistor on to conduct current arising from the ESD event from the first rail to the second rail.
1. An integrated circuit electrostatic discharge (ESD) protection circuit comprising:
a transistor having a drain operably coupled to a first rail of the integrated circuit and a source operatively coupled to a second rail of the integrated circuit the first rail being at a first voltage potential and the second rail being a second voltage potential, less than the first voltage potential; and
a voltage regulating trigger circuit operatively coupled to the first rail and to a gate of the transistor to drive the transistor responsive to an ESD event affecting the integrated circuit, wherein
the voltage regulating trigger circuit limits a potential of the first rail to the first potential and a gate potential of the transistor to a third voltage potential, less than the first voltage potential but sufficient to turn the transistor on to conduct current arising from the ESD event from the first rail to the second rail, the third voltage potential corresponding to a voltage potential of a third rail of the integrated circuit and
a high effective disable/enable device is coupled to the voltage regulating trigger circuit, the high effective disable/enable device being operative to disable the trigger circuit during normal chip-on operation.
2. The ESD protection circuit of claim 1 , wherein the third rail voltage potential is at or below 6V (volts).
3. The ESD protection circuit of claim 1 , the transistor comprising a nMOSFET.
4. The ESD protection circuit of claim 1 , wherein the voltage regulating trigger circuit comprises a voltage clamp.
5. The ESD protection circuit of claim 4 , wherein the voltage clamp comprises a diode stack operatively coupled between the first rail and the gate.
6. The ESD protection circuit of claim 1 , the disable/enable device comprising a low potential addressable transistor, a gate of which is operably coupled to a third rail voltage potential.
7. An integrated circuit comprising:
a first rail at a first voltage potential, a second rail at a second voltage potential and a third rail at a third voltage potential, wherein the first voltage potential, the second voltage potential and the third voltage potential are all different from each other,
an electrostatic discharge (ESD) protection circuit disposed within the integrated circuit and operatively coupled to the first rail, the second rail and the third rail, the ESD protection circuit including a transistor operably disposed between the first rail and the second rail, and a voltage regulating trigger circuit coupled to the first rail and to the transistor to turn on of the transistor responsive to an ESD event, wherein
the voltage regulating trigger circuit limits a potential of the first rail to the first voltage potential and a gate voltage potential of the transistor to the third voltage potential, less than the first voltage potential, such that the transistor is enabled to conduct current from the first rail to the second rail responsive to an ESD event and
a high effective disable/enable device is coupled to the voltage regulating trigger circuit, the high effective disable/enable device being operative to disable the trigger circuit during normal chip-on operation.
8. The integrated circuit of claim 7 , wherein the third rail voltage potential is at or below 6V (volts).
9. The integrated circuit of claim 7 , the transistor comprising a nMOSFET having a drain coupled to the first rail, a source coupled to the second rail, and a gate coupled to the voltage regulating trigger circuit.
10. The integrated circuit of claim 7 , wherein the voltage regulating trigger circuit comprises a voltage clamp.
11. The integrated circuit of claim 10 , wherein the voltage clamp comprises a diode stack operatively coupled between the first rail and a gate of the transistor.
12. The ESD protection circuit of claim 7 , the disable/enable device comprising a low potential addressable transistor, a gate of which is operably coupled to a third rail voltage potential.