Integrated circuits with lateral bipolar transistors and methods for fabricating the same
Integrated circuits with lateral bipolar transistors and methods for fabricating the same are provided. An exemplary integrated circuit includes a semiconductor layer overlying an insulator layer. The semiconductor layer includes a first region having a first thickness and a trench region having a second thickness less than the first thickness. The integrated circuit further includes an isolation region formed over the trench region of the semiconductor layer. Also, the integrated circuit includes a lateral bipolar transistor including a base formed in the trench region of the semiconductor layer, an emitter, and a collector.
1. An integrated circuit comprising:
a semiconductor layer overlying an insulator layer, wherein the semiconductor layer includes a first region having a first thickness and a trench region having a second thickness less than the first thickness;
an isolation region formed over the trench region of the semiconductor layer; and
a lateral bipolar transistor including a base contained completely within the trench region of the semiconductor layer, an emitter, and a collector.
2. The integrated circuit of claim 1 further comprising a gate structure formed over the isolation region.
3. The integrated circuit of claim 2 wherein the gate structure has a first length and the isolation region has a second length greater than the first length, such that a central portion of the gate structure lies over the isolation region and a remaining portion of the isolation region extends into the emitter and/or collector.
4. The integrated circuit of claim 2 wherein the gate effect is electrically suppressed from the base by the isolation region.
5. The integrated circuit of claim 1 wherein the emitter is formed in the first region of the semiconductor layer and the collector is formed in the first region of the semiconductor layer.
6. The integrated circuit of claim 1 wherein the lateral bipolar transistor is a lateral NPN bipolar transistor, the emitter is an n-doped region, the base is a p-doped region, and the collector is an n-doped region.
7. The integrated circuit of claim 1 wherein the lateral bipolar transistor is a lateral PNP bipolar transistor, the emitter is a p-doped region, the base is an n-doped region, and the collector is a p-doped region.
8. The integrated circuit of claim 1 wherein the semiconductor layer is an epitaxial layer.
9. The integrated circuit of claim 1 wherein the isolation region comprises a liner oxide layer and a gap-filling oxide layer.
10. The integrated circuit of claim 1 wherein the second thickness is from about one-quarter to about one-half of the first thickness.
11. The integrated circuit of claim 1 wherein the first region of the semiconductor layer has an upper surface, wherein the isolation region has a top surface, and wherein the upper surface and the top surface are substantially co-planar.
12. An integrated circuit comprising:
a semiconductor layer overlying an insulator layer on a semiconductor substrate and including an active area;
an isolation trench lying within the active area and extending partially through the semiconductor layer, wherein the isolation trench does not extend to the insulator layer;
a partial trench isolation region formed in the isolation trench; and
a gate structure overlying the partial trench isolation region and decoupled from the active area by the partial trench isolation region, wherein the gate structure includes a gate dielectric layer directly on the partial trench isolation region and a gate material layer over the gate dielectric layer.
13. The integrated circuit of claim 12 further comprising a lateral bipolar transistor including a base formed in the semiconductor layer below the partial trench isolation region, an emitter formed in the semiconductor layer, and a collector formed in the semiconductor layer.
14. The integrated circuit of claim 13 wherein the lateral bipolar transistor is a lateral NPN bipolar transistor, the emitter is an n-doped region, the base is a p-doped region, and the collector is an n-doped region.
15. The integrated circuit of claim 13 wherein the lateral bipolar transistor is a lateral PNP bipolar transistor, the emitter is a p-doped region, the base is an n-doped region, and the collector is a p-doped region.
16. The integrated circuit of claim 13 wherein the semiconductor layer is an epitaxial layer.
17. The integrated circuit of claim 13 wherein the partial trench isolation region comprises a liner oxide layer and a gap-filling oxide layer.
18. The integrated circuit of claim 13 wherein the semiconductor layer has thickness and wherein the isolation trench extends into the semiconductor layer to a depth of from about one-half to about three-quarters of the thickness of the semiconductor layer.
19. The integrated circuit of claim 13 wherein the semiconductor layer has an upper surface, wherein the partial trench isolation region has a top surface, and wherein the upper surface and the top surface are substantially co-planar.