Electronic device including a bidirectional HEMT
An electronic device can include a bidirectional HEMT. In an aspect, the electronic device can include a pair of switch gate and blocking gate electrodes, wherein the switch gate electrodes are not electrically connected to the blocking gate electrodes, and the first blocking, first switch, second blocking, and second switch gate electrodes are on the same die. In another aspect, the electronic device can include shielding structures having different numbers of laterally extending portions. In a further aspect, the electronic device can include a gate electrode and a shielding structure, wherein a portion of the shielding structure defines an opening overlying the gate electrode.
1. An electronic device including a bidirectional high electron mobility transistor, the electronic device comprising:
a first drain/source electrode;
a first source/drain electrode;
a first blocking gate electrode coupled to the first drain/source electrode;
a first switch gate electrode disposed between first drain/source electrode and the first blocking gate electrode, wherein the first switch gate electrode is not electrically connected to the first blocking gate electrode;
a second blocking gate electrode coupled to the first source/drain electrode; and
a second switch gate electrode disposed between first source/drain electrode and the second blocking gate electrode, wherein the second switch gate electrode is not electrically connected to the second blocking gate electrode,
wherein the first blocking, first switch, second blocking, and second switch gate electrodes are on a same die.
2. The electronic device of claim 1 , further comprising a first shielding structure electrically connected to the first drain/source electrode and including a first portion that defines a first opening overlying the first switch gate electrode.
3. The electronic device of claim 2 , wherein:
the first shielding structure further includes a second portion that overlies the first portion, the first opening within the first portion, and the first switch gate electrode; and
the first shielding structure is electrically connected to the first blocking gate electrode.
4. The electronic device of claim 1 , further comprising a first shielding structure electrically connected to the first drain/source electrode and including:
a first laterally extending portion that is part of a first interconnect level and overlies the first switch gate electrode, and as compared to the first switch gate electrode, the first laterally extending portion extends in a first lateral direction closer to the first source/drain electrode; and
a second laterally extending portion that is part of a second interconnect level that overlies the first interconnect level, wherein the second laterally extending portion overlies the first switch gate electrode and the first laterally extending portion, and as compared to the first switch gate electrode and the first laterally extending portion, the second laterally extending portion extends in the first lateral direction closer to the first source/drain electrode.
5. The electronic device of claim 4 , wherein the first laterally extending portion of the first shielding structure is electrically connected to the first blocking gate electrode.
6. The electronic device of claim 1 further comprising:
a second drain/source electrode disposed between the first blocking gate electrode and the first switch gate electrode; and
a second source/drain electrode disposed between the second blocking gate electrode and the second switch gate electrode.
7. The electronic device of claim 6 , further comprising:
a first shielding structure coupled to the first drain/source electrode; and
a second shielding structure coupled to the second drain/source electrode.
8. The electronic device of claim 7 , wherein:
the second shielding structure includes:
a first laterally extending portion overlying the first blocking gate electrode and is part of a first interconnect level; and
a second laterally extending portion overlying the first blocking gate electrode and the first laterally extending portion, wherein the second laterally extending portion is part of a second interconnect level; and
the first shielding structure includes a laterally extending portion overlying the first switch gate electrode and is part of the second interconnect level, wherein the first shielding structure does not include a laterally extending portion at the first interconnect level that extends over the first switch gate electrode.
9. The electronic device of claim 1 , wherein the first switch gate electrode is part of a first switch transistor, and the second switch gate electrode is part of a second switch transistor, wherein the first and second switch transistors are depletion mode transistors.
10. The electronic device of claim 1 , wherein the first switch gate electrode is part of a first switch transistor, and the second switch gate electrode is part of a second switch transistor, wherein the first and second switch transistors are enhancement mode transistors.
11. An electronic device including a bidirectional high electron mobility transistor structure, the electronic device comprising:
a drain/source electrode;
a source/drain electrode;
a first gate electrode closer to the drain/source electrode than to the source/drain electrode;
a first shielding structure electrically connected to the drain/source electrode and including a first laterally extending portion, wherein:
the first laterally extending portion overlies the first gate electrode; and
as compared to the first gate electrode, the first laterally extending portion extends in a horizontal direction closer to the source/drain electrode;
a second gate electrode closer to the source/drain electrode than to the drain/source electrode; and
a second shielding structure electrically connected to the source/drain electrode and including a second laterally extending portion, wherein:
the second laterally extending portion overlies the second gate electrode; and
as compared to the second gate electrode, the second laterally extending portion extends in a horizontal direction closer to the drain/source electrode,
wherein:
the first gate electrode is a first switch gate electrode and is not electrically connected to the first shielding structure and not electrically connected to the second shielding structure; and
the second gate electrode is a second switch gate electrode and is not electrically connected to the first fielding structure and not electrically connected to the second shielding structure.
12. The electronic device of claim 11 , further comprising:
a first blocking gate electrode electrically connected to the first shielding structure; and
a second blocking gate electrode electrically connected to the second shielding structure.
13. The electronic device of claim 11 , wherein the first switch gate electrode is part of a first switch transistor, and the second switch gate electrode is part of a second switch transistor, wherein the first and second switch transistors are depletion mode transistors.
14. The electronic device of claim 11 , wherein the first switch gate electrode is part of a first switch transistor, and the second switch gate electrode is part of a second switch transistor, wherein the first and second switch transistors are enhancement mode transistors.
15. The electronic device of claim 11 , wherein the first shielding structure further includes a third laterally extending portion overlying the first laterally extending portion and the first gate electrode, wherein as compared to the first gate electrode and the first laterally extending portion, the third laterally extending portion extends in a horizontal direction closer to the source/drain electrode.
16. An electronic device including a bidirectional high electron mobility transistor structure, the electronic device comprising:
a drain/source electrode;
a source/drain electrode;
a first switch gate electrode closer to the drain/source electrode than to the source/drain electrode;
a first blocking gate electrode;
a first shielding structure electrically connected to the drain/source electrode and including a first laterally extending portion and a second laterally extending portion, wherein the first and second laterally extending portions are parts of different interconnect levels;
a second switch gate electrode closer to the source/drain electrode than to the drain/source electrode; and
a second blocking gate electrode,
wherein each of the first and second blocking gate electrodes is disposed between the first and second switch gate electrodes.
17. The electronic device of claim 16 , wherein:
the first switch gate electrode and is not electrically connected to the first shielding structure and not electrically connected to the second shielding structure; and
the second switch gate electrode and is not electrically connected to the first shielding structure and not electrically connected to the second shielding structure.
18. The electronic device of claim 17 , wherein:
the first blocking gate electrode is electrically connected to the first shielding structure; and
the second blocking gate electrode is electrically connected to the second shielding structure.
19. The electronic device of claim 16 further comprising a second shielding structure electrically connected to the source/drain electrode and including a third laterally extending portion and a fourth laterally extending portion overlying the third laterally extending portion, the second switch gate electrode, and the second blocking gate electrode, wherein as compared to the third laterally extending portion, the fourth laterally extending portion extends in a horizontal direction closer to the drain/source electrode.
20. The electronic device of claim 19 , wherein:
the first laterally extending portion of the first shielding structure and the third laterally extending portion of the second shielding structure are parts of a same interconnect level; and
the second laterally extending portion of the first shielding structure and the fourth laterally extending portion of the second shielding structure are parts of a different interconnect level.