Solar cells with tunnel dielectrics
A solar cell can have a first dielectric formed over a first doped region of a silicon substrate. The solar cell can have a second dielectric formed over a second doped region of the silicon substrate, where the first dielectric is a different type of dielectric than the second dielectric. A doped semiconductor can be formed over the first and second dielectric. A positive-type metal and a negative-type metal can be formed over the doped semiconductor.
1. A solar cell, comprising:
a first insulating structure disposed over a first portion of a monocrystalline silicon substrate;
a second insulating structure disposed over a second portion of the monocrystalline silicon substrate, wherein both the first insulating structure and the second insulating structure comprise silicon, and wherein the first insulating structure differs in composition from the second insulating structure, wherein the first insulating structure comprises silicon nitride, and the second insulating structure comprises silicon dioxide;
a first semiconductor layer disposed over the first insulating structure, and a second semiconductor layer disposed over the second insulating structure;
a first metal contact disposed over the first semiconductor layer; and
a second metal contact disposed over the second semiconductor layer.
2. The solar cell of claim 1 , wherein the first semiconductor layer is P-type doped amorphous silicon, and the second semiconductor layer is N-type doped amorphous silicon.
3. The solar cell of claim 1 , wherein the first semiconductor layer is N-type doped amorphous silicon, and the second semiconductor layer is P-type doped amorphous silicon.
4. A solar cell, comprising:
a first insulating structure disposed over a first portion of a monocrystalline silicon substrate;
a second insulating structure disposed over a second portion of the monocrystalline silicon substrate, wherein both the first insulating structure and the second insulating structure comprise silicon, wherein the first insulating structure differs in composition from the second insulating structure, and wherein the first insulating structure comprises an oxide monolayer, and the second insulating structure comprises a plurality of oxide monolayers;
a first semiconductor layer disposed over the first insulating structure, and a second semiconductor layer disposed over the second insulating structure;
a first metal contact disposed over the first semiconductor layer; and
a second metal contact disposed over the second semiconductor layer.
5. The solar cell of claim 4 , wherein the first semiconductor layer is P-type doped amorphous silicon, and the second semiconductor layer is N-type doped amorphous silicon.
6. The solar cell of claim 4 , wherein the first semiconductor layer is N-type doped amorphous silicon, and the second semiconductor layer is P-type doped amorphous silicon.
7. The solar cell of claim 4 , wherein the monocrystalline silicon substrate comprises a first doped region under the first insulating structure and a second doped region under the second insulating structure.
8. A solar cell, comprising:
a first insulating structure disposed over a first portion of a monocrystalline silicon substrate;
a second insulating structure disposed over a second portion of the monocrystalline silicon substrate, wherein the first insulating structure differs in composition from the second insulating structure, and wherein the first insulating structure comprises silicon nitride, and the second insulating structure comprises silicon dioxide;
a first semiconductor layer disposed over the first insulating structure, and a second semiconductor layer disposed over the second insulating structure;
a first metal contact disposed over the first semiconductor layer; and
a second metal contact disposed over the second semiconductor layer.
9. The solar cell of claim 8 , wherein the first semiconductor layer is P-type doped amorphous silicon, and the second semiconductor layer is N-type doped amorphous silicon.
10. The solar cell of claim 8 , wherein the first semiconductor layer is N-type doped amorphous silicon, and the second semiconductor layer is P-type doped amorphous silicon.
11. A solar cell, comprising:
a first insulating structure disposed over a first portion of a monocrystalline silicon substrate;
a second insulating structure disposed over a second portion of the monocrystalline silicon substrate, wherein the first insulating structure differs in structure from the second insulating structure, wherein the first insulating structure comprises an oxide monolayer, and the second insulating structure comprises a plurality of oxide monolayers, and wherein both the first insulating structure and the second insulating structure comprise silicon;
a first semiconductor layer disposed over the first insulating structure, and a second semiconductor layer disposed over the second insulating structure;
a first metal contact disposed over the first semiconductor layer; and
a second metal contact disposed over the second semiconductor layer.