Source optimization for image fidelity and throughput

1. A non-transitory computer-readable medium storing a sequence of instructions that when executed by a computer causes the computer to perform a method, the instructions comprising:

instructions for receiving all or a portion of a layout database from which a target pattern of features to be created via a photolithographic process is selected;

instructions for generating first corrected features of the layout database with a resolution enhancement technique to reduce imaging errors between the target pattern of features and an image produced on a wafer using the first corrected features; and

instructions for selecting and assigning first pixel intensity values to be produced by a pixilated illumination light source having a number of pixels with different pixel intensities, wherein the first pixel intensity values are selected to reduce imaging errors between the target pattern of features and the image produced on the wafer using the first pixel intensity values.

2. The non-transitory computer-readable medium of claim 1 , wherein the instructions further comprise:

instructions for generating second corrected features with a resolution enhancement technique applied to the first corrected features assuming illumination light produced by the pixilated illumination light source using the first pixel intensity values; and

instructions for selecting second pixel intensity values to be produced by the pixilated illumination light source using the second corrected features, wherein the second pixel intensity values are selected to further reduce imaging errors between the target pattern of features and the image produced on the wafer using the second pixel intensity values.

3. The non-transitory computer-readable medium of claim 1 , wherein the instructions further comprise:

instructions for selecting second pixel intensity values to be produced by the pixilated illumination light source using the first corrected features, wherein the second pixel intensity values are selected to further reduce imaging errors between the target pattern of features and the image produced on the wafer using the second pixel intensity values; and

instructions for generating second corrected features with a resolution enhancement technique applied to the first correct features assuming illumination light produced by the pixilated illumination light source using the second pixel intensity values.

4. The non-transitory computer-readable medium of claim 1 , wherein:

the instructions further comprise:

instructions for receiving a description of the pixilated light source, wherein the description comprises properties of the pixilated light source when the pixilated light source is used in a photolithographic process; and

instructions for generating a desired light source distribution for the pixilated light source, the generating comprising simulating the pixilated light source and approximating the target pattern of features produced on the wafer using the pixilated light source, the approximating comprising determining the first pixel intensity values.

5. The non-transitory computer-readable medium of claim 1 , wherein:

the target pattern of features is a symmetrical pattern of layout features;

the image is produced on the wafer using a diffractive optical element; and

the instructions further comprise:

instructions for defining a mathematical relationship between one or more pixel intensities produced by the diffractive optical element and the target pattern of features; and

instructions for assigning pixel intensities for the diffractive optical element using the mathematical relationship in one or more computer simulations, wherein:

runtime for the computer simulations is reduced by simulating a portion, but not all, of the target pattern of features, and

the first pixel intensity values are calculated to produce an image of the target pattern of features on the wafer with greater image fidelity than other features in the layout database.

6. A non-transitory computer-readable medium storing a sequence of instructions that when executed by a computer causes the computer to perform a method, the instructions comprising:

instructions for receiving a description of a pixilated light source, the description defining properties of the pixilated light source when the pixilated light source is used in a photolithographic process;

instructions for receiving a layout pattern defining a desired pattern of features to be produced on a wafer using the photolithographic process;

instructions for generating a desired light source distribution for the pixilated light source, the generating comprising simulating the pixilated light source and approximating the desired pattern of features produced on the wafer using the simulated pixilated light source, the approximating comprising determining different pixel intensity values to be assigned to separate pixels of the pixilated light source; and

instructions for generating a corrected layout pattern, the corrected layout pattern calculated to produce an image on the wafer that approximates the desired pattern of features.

7. The non-transitory computer-readable medium of claim 6 , wherein the simulating the pixilated light source uses the corrected layout pattern.

8. The non-transitory computer-readable medium of claim 6 , wherein the instructions further comprise instructions for iteratively repeating execution of the instructions for generating the desired light source distribution and generating the corrected layout pattern until a desired image fidelity is reached.

9. The non-transitory computer-readable medium of claim 6 , wherein the corrected layout pattern is generated using the desired light source distribution.

10. The non-transitory computer-readable medium of claim 9 , wherein the instructions further comprise instructions for iteratively repeating execution of the instructions for generating the desired light source distribution and generating the corrected layout pattern until a desired image fidelity is reached.

11. The non-transitory computer-readable medium of claim 6 , wherein the instructions further comprise instructions for iteratively repeating execution of the instructions for generating the desired light source distribution and generating the corrected layout pattern until a desired depth of focus is reached.

12. The non-transitory computer-readable medium of claim 6 , wherein the generating a desired light source distribution further comprises weighting one or more selected areas of the desired pattern of features such that the image on the wafer approximates the one or more selected areas with greater image fidelity than unselected areas of the desired pattern of features.

13. The non-transitory computer-readable medium of claim 6 , wherein the generating the desired light source distribution further comprises limiting source energy of one or more pixel intensities of the pixilated light source.

14. The non-transitory computer-readable medium of claim 6 , wherein the generating the desired light source distribution further comprises smoothing source intensities of one or more pixels of the pixilated light source.

15. A computer-implemented method, comprising:

by a computer:

selecting a pattern of features in a layout database to be created on a wafer by determining a symmetrical pattern of layout features in the layout database;

defining a mathematical relationship between one or more pixel intensities produced by a diffractive optical element configured to produce a pixilated light source and the selected pattern of features; and

assigning pixel intensities for the diffractive optical element using the mathematical relationship in one or more computer simulations, wherein:

runtime for the computer simulations is reduced by simulating a portion, but not all, of the symmetrical pattern of layout features, and

the pixel intensities are calculated to produce an image of the selected pattern of features on the wafer with greater image fidelity than other features in the layout database.

16. The method of claim 15 , wherein the portion is one fourth of a fundamental cell of the symmetrical pattern of layout features.

17. The method of claim 15 , wherein:

the portion is one fourth of a fundamental cell of the symmetrical pattern of layout features; and

the runtime for the computer simulations is further reduced by filtering one or more spectra of the reduced portion to induce even periodic boundary conditions.

18. The method of claim 15 , wherein the selected pattern of features includes uniform edge weighting for the symmetrical pattern of layout features.

19. The method of claim 15 , wherein the selected pattern of features includes weighting gates in the symmetrical pattern of layout features to print with greater image fidelity.