Adjustable mass resolving aperture
Embodiments of the invention relate to a mass resolving aperture that may be used in an ion implantation system that selectively exclude ion species based on charge to mass ratio (and/or mass to charge ratio) that are not desired for implantation, in an ion beam assembly. Embodiments of the invention relate to a mass resolving aperture that is segmented, adjustable, and/or presents a curved surface to the oncoming ion species that will strike the aperture. Embodiments of the invention also relate to the filtering of a flow of charged particles through a closed plasma channel (CPC) superconductor, or boson energy transmission system.
1. An ion implantation system, comprising:
an ion source configured to generate an ion beam having a plurality of ions that propagate along a beam path;
a mass analyzer configured to generate a magnetic field that bends a trajectory of each of the ions within the ion beam such that ions having a lower mass to charge ratio are bent more than ions having a higher mass to charge ratio,
wherein the trajectory of each of the ions lies in a corresponding plane; and
a mass resolving aperture,
wherein the mass resolving aperture has an opening,
wherein the mass resolving aperture is positioned such that a first portion of the ions in the ion beam as the ion beam approaches the mass resolving aperture passes through the opening and is in the ion beam after the ion beam exits the mass resolving aperture and the mass resolving aperture alters a motion of a second portion of the ions in the ion beam as the ion beam approaches the mass resolving aperture such that the second portion of the ions is not in the ion beam after the ion beam exits the mass resolving aperture, and
wherein a height of the opening is adjustable, wherein the height of the opening is measured in a direction perpendicular to the plane, wherein adjusting the height of the opening alters which ions are in the first portion of the ions.
2. The ion implantation system according to claim 1 ,
wherein a width of the opening is adjustable,
wherein the width of the opening is measured in a direction lying in the plane, and
wherein adjusting the width of the opening alters which ions are in the first portion of the ions.
3. The ion implantation system according to claim 2 ,
wherein the mass resolving aperture comprises:
four sides,
wherein the four sides form the opening, and
wherein at least one side of the four sides is linearly movable.
4. The ion implantation system according to claim 3 ,
wherein a first side of the at least one side is linearly movable in a direction parallel with the direction that the height is measured in, and
wherein linearly moving the first side in the direction parallel with the direction that the height is measured in adjusts the height of the opening.
5. The ion implantation system according to claim 4 ,
wherein a second side of the at least one side is linearly movable in a direction parallel with the direction that the width is measured in, and
wherein linearly moving the second side in the direction parallel with the direction that the width is measured in adjusts the width of the opening.
6. The ion implantation system according to claim 4 ,
wherein a third side of the at least one side is linearly movable in a direction parallel with the direction that the height is measured in, and
wherein linearly moving the third side of the at least one side in the direction parallel with the direction that the height is measured in adjusts the height of the opening.
7. The ion implantation system according to claim 6 ,
wherein a fourth side of the at least one side is linearly movable in a direction parallel with the direction that the width is measured in, and
wherein linearly moving the fourth side of the at least one side in the direction parallel with the direction that the width is measured in adjusts the width of the opening.
8. The ion implantation system according to claim 3 ,
wherein each side of the four sides is linearly movable in a direction parallel with the direction that the height is measured in and linearly movable in a direction parallel with the direction that the width is measured in.
9. The ion implantation system according to claim 8 ,
wherein any opening size within an opening size operating range can be achieved by linearly moving one or more sides of the four sides:
(i) in the direction parallel with the direction that the height is measured in;
(ii) in the direction parallel with the direction that the width is measured in; or
(iii) in the direction parallel with the direction that the height is measured in and in the direction parallel with the direction that the width is measured in.
10. The ion implantation system according to claim 8 ,
wherein for a certain opening size within an opening size operating range, any opening location within an opening location operating range for the certain opening size can be achieved by linearly moving one or more sides of the four sides:
(i) in the direction parallel with the direction that the height is measured in;
(ii) in the direction parallel with the direction that the width is measured in; or
(iii) in the direction parallel with the direction that the height is measured in and in the direction parallel with the direction that the width is measured in.
11. The ion implantation system according to claim 1 ,
wherein a path position of the opening is in adjustable,
wherein the path position is measured in a direction along the beam path, and
wherein adjusting the path position of the opening alters which ions are in the first portion of the ions.
12. The ion implantation system according to claim 1 ,
wherein the plurality of ions comprises isotopes.
13. A mass resolving aperture, comprising:
four sides,
wherein the four sides form an opening,
wherein at least one side of the four sides is linearly movable,
wherein the mass resolving aperture is configured such that when the mass resolving aperture is positioned along a beam path along which an ion beam having a plurality of ions propagates, where a magnetic field bends a trajectory of each ion of the plurality of ions within the ion beam such that ions having a lower mass to charge ratio are bent more than ions having a higher mass to charge ratio, wherein the trajectory of each ion of the plurality of ions lies in a corresponding plane, such that a first portion of the plurality of ions in the ion beam as the ion beam approaches the mass resolving aperture passes through the opening and is in the ion beam after the ion beam exits the mass resolving aperture and the mass resolving aperture alters a motion of a second portion of the ions in the ion beam as the ion beam approaches the mass resolving aperture such that the second portion of the ions is not in the ion beam after the ion beam exits the mass resolving aperture, adjusting a height of the opening alters which ions are in the first portion of the ions, where the height of the opening is measured in a direction perpendicular to the plane,
wherein a first side of the at least one side is linearly movable in a direction parallel with the direction that the height of the opening is measured in, and
wherein linearly moving the first side in the direction parallel with the direction that the height of the opening is measured in adjusts the height of the opening.
14. The mass resolving aperture according to claim 13 ,
wherein the mass resolving aperture is configured such that when the mass resolving aperture is positioned along the beam path along which the ion beam having the plurality of ions propagates, where the magnetic field bends the trajectory of each ion of the plurality of ions within the ion beam such that ions having the lower mass to charge ratio are bent more than ions having the higher mass to charge ratio, wherein the trajectory of each ion of the plurality of ions lies in the corresponding plane, such that the first portion of the plurality of ions in the ion beam as the ion beam approaches the mass resolving aperture passes through the opening and is in the ion beam after the ion beam exits the mass resolving aperture and the mass resolving aperture alters the motion of the second portion of the ions in the ion beam as the ion beam approaches the mass resolving aperture such that the second portion of the ions is not in the ion beam after the ion beam exits the mass resolving aperture, adjusting a width of the opening alters which ions are in the first portion of the ions, where the width of the opening is measured in a direction parallel to the plane and perpendicular to the direction perpendicular to the plane that the height of the opening is measured in,
wherein a second side of the at least one side is linearly movable in a direction parallel with the direction that the width of the opening is measured in, and
wherein linearly moving the second side in the direction parallel with the direction that the width of the opening is measured in adjusts the width of the opening.
15. The mass resolving aperture according to claim 14 ,
wherein each side of the four sides is linearly movable in the direction parallel with the direction that the height of the opening is measured in and linearly movable in the direction parallel with the direction that the width of the opening is measured in.
16. The mass resolving aperture according to claim 15 ,
wherein any opening size within an opening size operating range can be achieved by linearly moving one or more sides of the four sides:
(i) in the direction parallel with the direction that the height of the opening is measured in;
(ii) in the direction parallel with the direction that the width of the opening is measured in; or
(iii) in the direction parallel with the direction that the height of the opening is measured in and in the direction parallel with the direction that the width of the opening is measured in.
17. The mass resolving aperture according to claim 15 ,
wherein for a certain opening size within an opening size operating range, any opening location within an opening location operating range for the certain opening size can be achieved by linearly moving one or more sides of the four sides:
(i) in the direction parallel with the direction that the height of the opening is measured in;
(ii) in the direction parallel with the direction that the width of the opening is measured in; or
(iii) in the direction parallel with the direction that the height of the opening is measured in and in the direction parallel with the direction that the width of the opening is measured in.
18. The mass resolving aperture according to claim 14 ,
wherein a fourth side of the at least one side is linearly movable in a direction parallel with the direction that the width is measured in, and
wherein linearly moving the fourth side of the at least one side in the direction parallel with the direction that the width is measured in adjusts the width of the opening.
19. The mass resolving aperture according to claim 13 ,
wherein the mass resolving aperture is configured such that when the mass resolving aperture is positioned along the beam line along which the ion beam having the plurality of ions propagates, a path position of the opening is in adjustable,
wherein the path position is measured in a direction along the beam path, and
wherein adjusting the path position of the opening alters which ions are in the first portion of the ions.
20. The mass resolving aperture according to claim 13 ,
wherein a third side of the at least one side is linearly movable in a direction parallel with the direction that the height is measured in, and
wherein linearly moving the third side of the at least one side in the direction parallel with the direction that the height is measured in adjusts the height of the opening.