Semiconductor device, manufacturing method of the same, or display device including the same
To provide a novel semiconductor device including an oxide semiconductor film. The semiconductor device includes a first transistor and a second transistor. The first transistor includes a first gate electrode, a first insulating film over the first gate electrode, a first oxide semiconductor film over the first insulating film, a source electrode electrically connected to the first oxide semiconductor film, a drain electrode electrically connected to the first oxide semiconductor film, a second insulating film over the first oxide semiconductor film, a second oxide semiconductor film functioning as a second gate electrode, over the second insulating film, and a third insulating film over the second oxide semiconductor film. The second transistor includes a third oxide semiconductor film including a channel region, a source region, and a drain region over the second insulating film, a fourth insulating film over the channel region, a third gate electrode over the fourth insulating film, and the third insulating film over the source region and the drain region.
1. A semiconductor device comprising:
a first transistor; and
a second transistor,
wherein the first transistor includes:
a first gate electrode;
a first insulating film over the first gate electrode;
a first oxide semiconductor film over the first insulating film;
a source electrode electrically connected to the first oxide semiconductor film;
a drain electrode electrically connected to the first oxide semiconductor film;
a second insulating film over the first oxide semiconductor film;
a second oxide semiconductor film functioning as a second gate electrode, over the second insulating film; and
a third insulating film over the second oxide semiconductor film,
wherein the second transistor includes:
a third oxide semiconductor film over the second insulating film, the third oxide semiconductor film including a channel region, a source region, and a drain region;
a fourth insulating film over the channel region;
a third gate electrode over the fourth insulating film; and
the third insulating film over the source region and the drain region.
2. The semiconductor device according to claim 1 ,
wherein the first oxide semiconductor film, the second oxide semiconductor film, and the third oxide semiconductor film each include In, M, and Zn, and
wherein M is Al, Ga, Y, or Sn.
3. The semiconductor device according to claim 1 ,
wherein at least one of the first oxide semiconductor film, the second oxide semiconductor film, and the third oxide semiconductor film includes a multilayer structure.
4. The semiconductor device according to claim 1 ,
wherein at least one of the first oxide semiconductor film, the second oxide semiconductor film, and the third oxide semiconductor film includes a crystal part, and
wherein the crystal part has c-axis alignment.
5. The semiconductor device according to claim 1 ,
wherein the first gate electrode and the second gate electrode are electrically connected to each other.
6. The semiconductor device according to claim 1 ,
wherein the second transistor further includes:
a source electrode electrically connected to the source region; and
a drain electrode electrically connected to the drain region.
7. The semiconductor device according to claim 1 ,
wherein the third insulating film includes one of or both hydrogen and nitrogen.
8. An electronic device comprising:
the semiconductor device according to claim 1 ; and
one of an operation key and a battery.
9. A display device comprising:
a driver circuit portion; and
a pixel portion,
wherein the driver circuit portion includes a first transistor, the first transistor including:
a first gate electrode;
a first insulating film over the first gate electrode;
a first oxide semiconductor film over the first insulating film;
a source electrode electrically connected to the first oxide semiconductor film;
a drain electrode electrically connected to the first oxide semiconductor film;
a second insulating film over the first oxide semiconductor film;
a second oxide semiconductor film functioning as a second gate electrode, over the second insulating film; and
a third insulating film over the second oxide semiconductor film, and
wherein the pixel portion includes a second transistor, the second transistor including:
a third oxide semiconductor film over the second insulating film, the third oxide semiconductor film including a channel region, a source region, and a drain region;
a fourth insulating film over the channel region;
a third gate electrode over the fourth insulating film; and
the third insulating film over the source region and the drain region.
10. The display device according to claim 9 ,
wherein the first oxide semiconductor film, the second oxide semiconductor film, and the third oxide semiconductor film each include In, M, and Zn, and
wherein M is Al, Ga, Y, or Sn.
11. The display device according to claim 9 ,
wherein at least one of the first oxide semiconductor film, the second oxide semiconductor film, and the third oxide semiconductor film includes a multilayer structure.
12. The display device according to claim 9 ,
wherein at least one of the first oxide semiconductor film, the second oxide semiconductor film, and the third oxide semiconductor film includes a crystal part, and
wherein the crystal part has c-axis alignment.
13. The display device according to claim 9 ,
wherein the first gate electrode and the second gate electrode are electrically connected to each other.
14. The display device according to claim 9 ,
wherein the second transistor further includes:
a source electrode electrically connected to the source region; and
a drain electrode electrically connected to the drain region.
15. The display device according to claim 9 ,
wherein the third insulating film includes one of or both hydrogen and nitrogen.
16. A display module comprising:
the display device according to claim 9 ; and
a touch sensor.
17. An electronic device comprising:
the display device according to claim 9 ; and
one of an operation key and a battery.