Clock gating circuit
Provided are semiconductor circuits. A semiconductor circuit includes: a first circuit configured to propagate a value of a first node to a second node based on a voltage level of a clock signal; a second circuit configured to propagate a value of the second node to a third node based on the voltage level of the clock signal; and a third circuit configured to determine a value of the third node based on a voltage level of the second node and the voltage level of the clock signal, wherein the first circuit comprises a first transistor gated to a voltage level of the first node, a second transistor connected in series with the first transistor and gated to the voltage level of the third node, and a third transistor connected in parallel with the first and second transistors and gated to a voltage level of the clock signal to provide the value of the first node to the second node.
1. A semiconductor circuit comprising:
a first circuit configured to propagate a value of a first node to a second node based on a voltage level of a clock signal;
a second circuit configured to propagate a value of the second node to a third node based on the voltage level of the clock signal; and
a third circuit configured to determine a value of the third node based on a voltage level of the second node and the voltage level of the clock signal,
wherein the first circuit comprises a first transistor gated to a voltage level of the first node, a second transistor connected in series with the first transistor and gated to a voltage level of the third node, and a third transistor connected in parallel with the first and second transistors and gated to the voltage level of the clock signal to provide the value of the first node to the second node.
2. The semiconductor circuit of claim 1 , wherein the third circuit comprises a fifth transistor gated to the voltage level of the second node to provide a power supply voltage to the third node, and a sixth transistor connected in parallel with the fifth transistor and gated to the voltage level of the clock signal to provide the power supply voltage to the third node.
3. The semiconductor circuit of claim 2 , wherein the second circuit comprises an eighth transistor gated to the voltage level of the third node to provide the power supply voltage to the second node, a fourth transistor gated to the voltage level of the clock signal, and a ninth transistor gated to an inverted voltage level of the second node to provide a ground voltage to the second node.
4. The semiconductor circuit of claim 3 , wherein the second circuit further comprises a tenth transistor connected in series to the ninth transistor and gated to the voltage level of the clock signal.
5. The semiconductor circuit of claim 4 , wherein a drain of the tenth transistor is connected to the second node.
6. The semiconductor circuit of claim 4 , wherein a drain of the tenth transistor is connected between the first and second transistors.
7. The semiconductor circuit of claim 1 , further comprising:
an output circuit configured to determine a voltage level of a fourth node based on the voltage level of the third node,
wherein the output circuit comprises a latch circuit.