Nitride semiconductor light-emitting device and method for producing the same
A nitride semiconductor light-emitting device includes a substrate which includes polycrystal silicon dioxide or amorphous silicon dioxide as a main component, an underlying layer that is provided on the substrate, and a multilayer structure that is provided on the underlying layer and includes at least one layer made of a nitride semiconductor single crystal. The underlying layer includes crystals oriented to a c-axis and is formed by sputtering.
1. A nitride semiconductor light-emitting device comprising:
a substrate including polycrystal silicon dioxide or amorphous silicon dioxide as a main component;
an underlying layer on the substrate; and
a multilayer structure on the underlying layer and including at least one layer made of a nitride semiconductor single crystal,
wherein the underlying layer includes crystals oriented to a c-axis and is formed by sputtering, and
wherein the underlying layer includes 3 atom % or more and 10 atom % or less of oxygen atoms separately from the crystals oriented to the c-axis.
2. The nitride semiconductor light-emitting device according to claim 1 ,
wherein the underlying layer includes at least one of AlN crystals oriented to the c-axis, BN crystals oriented to the c-axis, and Ga 2 O 3 crystals oriented to the c-axis, as the crystals oriented to the c-axis.
3. The nitride semiconductor light-emitting device according to claim 1 ,
wherein an unevenness is formed on a surface of the substrate, the surface facing the underlying layer.
4. The nitride semiconductor light-emitting device according to claim 1 ,
wherein the substrate further includes first atoms which are different from silicon atoms and oxygen atoms and
wherein the first atoms included in the substrate causes a refractive index of the substrate to be higher than a refractive index of a substrate including silicon dioxide alone.
5. The nitride semiconductor light-emitting device according to claim 4 ,
wherein the first atoms are one or both of lanthanum atoms and titanium atoms.
6. The nitride semiconductor light-emitting device according to claim 4 ,
wherein the substrate includes the first atoms of 1×10 10 cm −3 or more and 1×10 12 cm −3 or less.
7. The nitride semiconductor light-emitting device according to claim 1 ,
wherein a p-side electrode is provided on the multilayer structure, and
wherein n-side electrodes are provided under the underlying layer instead of the substrate.
8. A nitride semiconductor light-emitting device comprising:
a substrate including polycrystal silicon dioxide or amorphous silicon dioxide as a main component;
an underlying layer on the substrate; and
a multilayer structure on the underlying layer and including at least one layer made of a nitride semiconductor single crystal,
wherein the underlying layer includes crystals oriented to a c-axis and includes rare gas atoms of 10 atom % or less, and
wherein the underlying layer includes 3 atom % or more and 10 atom % or less of oxygen atoms separately from the crystals oriented to the c-axis.
9. A method for producing a nitride semiconductor light-emitting device comprising:
forming an underlying layer including crystals oriented to a c-axis on a substrate including polycrystal silicon dioxide or amorphous silicon dioxide as a main component by sputtering; and
forming a multilayer structure, which includes at least one layer made of a nitride semiconductor single crystal, on the underlying layer,
wherein the underlying layer includes 3 atom % or more and 10 atom % or less of oxygen atoms separately from the crystals oriented to the c-axis.
10. The method for producing a nitride semiconductor light-emitting device according to claim 9 , further comprising:
forming an unevenness on a surface of the substrate, the surface facing the underlying layer.
11. The method for producing a nitride semiconductor light-emitting device according to claim 10 ,
wherein the unevenness is formed by sandblasting.
12. The method for producing a nitride semiconductor light-emitting device according to claim 10 ,
wherein the unevenness is formed by wet etching using an etchant including hydrofluoric acid.
13. The method for producing a nitride semiconductor light-emitting device according to claim 9 , further comprising:
removing the substrate after at least one layer made of a nitride semiconductor single crystal is formed;
forming a p-side electrode on the multilayer structure; and
forming n-side electrodes on a surface of the underlying layer exposed by removing the substrate.
14. The method for producing a nitride semiconductor light-emitting device according to claim 9 ,
wherein the substrate further includes first atoms which are different from silicon atoms and oxygen atoms and
wherein the first atoms included in the substrate causes a refractive index of the substrate to be higher than a refractive index of a substrate including silicon dioxide alone.
15. The method for producing a nitride semiconductor light-emitting device according to claim 14 ,
wherein the first atoms are one or both of lanthanum atoms and titanium atoms.
16. The method for producing a nitride semiconductor light-emitting device according to claim 14 ,
wherein the substrate includes the first atoms of 1×10 10 cm −3 or more and 1×10 12 cm −3 or less.