Non-volatile memory with in field failure prediction using leakage detection

1. A non-volatile memory system, comprising:

a plurality of memory cells and a plurality of control lines arranged as a non-volatile memory structure; and

a control circuit in communication with the non-volatile memory structure, the control circuit configured to cause testing of a first portion of the non-volatile memory structure for leakage in response to a successful programming process for the first portion of the non-volatile memory structure, and wherein: the control circuit is configured to cause data to be copied from the first portion of the non-volatile memory structure to a second portion of the non-volatile memory structure in response to determining that the first portion of the non-volatile memory structure has more than a first, non-zero amount of leakage and less than a second amount of leakage based on the testing; and the control circuit is configured to perform a data recovery process on data from the first portion of the non-volatile memory structure in response to determining that the first portion of the non-volatile memory structure has-more than the second amount of leakage based on the testing.

2. The non-volatile memory system of claim 1 , wherein:

the control circuit is configured to cause testing of the first portion of the non-volatile memory structure for leakage in response to a successful programming process and a successful erase process for the first portion of the non-volatile memory structure.

3. The non-volatile memory system of claim 1 , wherein:

the control circuit is configured to cause testing of the first portion of the non-volatile memory structure for leakage in response to multiple program/erase cycles for the first portion of the non-volatile memory structure, the multiple program/erase cycles include the successful programming process as the last programming process of the multiple program/erase cycles.

4. The non-volatile memory system of claim 1 , wherein:

the control circuit is configured to cause data to be copied from the first portion of the non-volatile memory structure to a second portion of the non-volatile memory structure and treat the first portion of the non-volatile memory structure as defective in response to determining that the first portion of the non-volatile memory structure has more than the first amount of leakage and less than a second amount of leakage.

5. The non-volatile memory system of claim 1 , wherein:

the control circuit is configured to cause testing of the first portion of the non-volatile memory structure for leakage in response to the successful programming process that programs host data into the first portion of the non-volatile memory structure.

6. The non-volatile memory system of claim 1 , wherein:

the control circuit is configured to cause testing of the first portion of the non-volatile memory structure for leakage by causing a test for word line to word line leakage.

7. The non-volatile memory system of claim 1 , wherein:

the control circuit is configured to cause testing of the first portion of the non-volatile memory structure for leakage by causing a test for word line to substrate leakage.

8. The non-volatile memory system of claim 1 , wherein:

the control circuit is configured to retire the first portion of the non-volatile memory structure in response to determining that the first portion of the non-volatile memory structure has at the first amount of leakage based on the testing.

9. The non-volatile memory system of claim 1 , wherein:

the control circuit includes a controller and a leakage detection circuit;

the memory structure and the leakage detection circuit are on a first integrated circuit; and

the controller is on a second integrated circuit that is connected to the first integrated circuit.

10. The non-volatile memory system of claim 1 , wherein:

the non-volatile memory structure is a three dimensional memory structure;

the control lines include bit lines and word lines;

the first portion of the non-volatile memory structure is a first block; and

the second portion of the non-volatile memory structure is a second block.

11. A non-volatile memory system, comprising;

a three dimensional memory circuit, comprising:

a substrate,

a plurality of memory cells, bit lines and word lines arranged in a three dimensional structure above the substrate, and

a leakage detection circuit; and

a controller connected to the three dimensional memory circuit, the controller configured to request that the leakage detection circuit perform a leakage test on a portion of the memory circuit, the controller is configured to treat the portion of the memory circuit as defective in response to receiving a result from the leakage circuit that indicates that the portion of the memory circuit has an amount of leakage above a first, non-zero amount, but less than a second amount that indicates a defect in the portion of the memory circuit.

12. The non-volatile memory system of claim 11 , wherein:

the controller configured to request that the leakage detection circuit perform a leakage test on a portion of the memory circuit in response to multiple program/erase cycles for the portion of the memory circuit.

13. The non-volatile memory system of claim 11 , wherein:

the controller is configured to treat the portion of the memory circuit as defective in response to determining that the amount of leakage indicates a potential future defect but no current defect.

14. A method for operating a non-volatile memory system, comprising:

performing program/erase cycles for the non-volatile memory system;

in response to a set of multiple program/erase cycles, testing the non-volatile memory system for leakage;

based on the testing, determining whether the non-volatile memory system is experiencing leakage; and

copying data from a first portion of the non-volatile memory system experiencing leakage to a second portion of the non-volatile memory system in response to determining that the non-volatile memory system is experiencing leakage;

a control circuit in communication with the non-volatile memory structure, the control circuit configured to cause testing of a first portion of the non-volatile memory structure for leakage in response to a successful programming process for the first portion of the non-volatile memory structure, and wherein the control circuit is configured to cause data to be copied from the first portion of the non-volatile memory structure to a second portion of the non-volatile memory structure in response to determining that the first portion of the non-volatile memory structure has more than a first, non-zero amount of leakage and less than a second amount of leakage based on the testing.

15. The method of claim 14 , wherein:

the program/erase cycles are successful; and

the testing the non-volatile memory system for leakage is performed in response to the successful program/erase cycles.

16. The method of claim 14 , wherein the testing is a test for word line to word line leakage.

17. The method of claim 14 , wherein the testing is a test for word line to substrate leakage.

18. The method of claim 14 , wherein:

the testing the non-volatile memory system for leakage is performed in response to determining that the first portion of the non-volatile memory structure has at the first amount of leakage based on the testing.

19. A non-volatile memory system, comprising;

a three dimensional memory structure comprising a plurality of memory cells, bit lines and word lines;

means for testing a first portion of the memory structure for leakage;

means for determining whether the first portion of the memory structure has a non-zero amount of leakage that indicates a potential future defect but no current defect based on the testing; and

means for retiring the first portion of the memory structure in response to determining that the first portion of the non-volatile memory structure has an amount of leakage in a range that indicates a potential future defect but no current defect.

20. The non-volatile memory system of claim 19 , further comprising:

means for performing a successful programming process for programming data into the first portion of the non-volatile memory structure, the means for testing performs the testing of the first portion of the non-volatile memory structure for leakage in response to successfully programming data into the first portion of the non-volatile memory structure.